AP01L60J_10 [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP01L60J_10 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP01L60H/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
RDS(ON)
ID
600V
12Ω
1A
D
S
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
G
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
600
Gate-Source Voltage
+30
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
1
A
0.8
A
3
29
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.232
0.5
W/℃
mJ
A
EAS
IAR
Avalanche Current
1
EAR
TSTG
TJ
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
0.5
mJ
℃
℃
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
4.3
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data & specifications subject to change without notice
1
201010134
AP01L60H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
600
-
0.8
-
-
-
V
V/℃
Ω
∆BVDSS/∆Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
-
Static Drain-Source On-Resistance3 VGS=10V, ID=0.5A
12
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
VDS=600V, VGS=0V
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-
4
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=125oC) VDS=480V, VGS=0V
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
100
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VGS=+30V, VDS=0V
ID=1A
-
+100
4.0
1.0
1.1
6.6
5.0
11.7
9.2
170
30.7
5.1
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=1A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=300Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage3
VD=VG=0V , VS=1.2V
-
-
-
-
-
-
1
5
ISM
VSD
Tj=25℃, IS=1A, VGS=0V
1.2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A.
3.Pulse test
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP01L60H/J
1.0
0.8
0.5
0.3
0.0
1.5
1.0
0.5
0.0
T C =150 o C
T C =25 o C
10V
6.0V
5.5V
5.0V
10V
5.0V
4.5V
V G =4.0V
V G =4.5V
0
12
24
36
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.5
1.3
1.1
0.9
0.7
0.5
I D =0.5A
V
G =10V
2
1
0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
3.5
1
3.0
2.5
2.0
T j = 25 o
C
T j = 150 o
C
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP01L60H/J
f=1.0MHz
16
1000
100
10
I D =1A
V
DS =480V
12
C iss
8
C oss
4
C rss
1
0
1
5
9
13
17
21
25
29
0
1.5
3
4.5
6
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Duty factor=0.5
0.2
1
100us
1ms
0.1
0.1
0.05
0.02
PDM
0.1
t
0.01
10ms
100ms
DC
T
Single Pulse
T C =25 o C
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.01
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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