AP01L60P [A-POWER]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | AP01L60P |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP04N70BP
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
BVDSS
RDS(ON)
ID
600/650/700V
2.4Ω
D
S
▼ Repetitive Avalanche Rated
▼ Fast Switching
4A
G
▼ Simple Drive Requirement
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
TO-220
S
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
600/650/700
± 30
Units
V
VDS
VGS
Drain-Source Voltage
- /A/H
Gate-Source Voltage
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
4
A
2.5
A
15
A
PD@TC=25℃
Total Power Dissipation
62.5
W
Linear Derating Factor
Single Pulse Avalanche Energy2
0.5
W/℃
mJ
A
EAS
IAR
100
Avalanche Current
4
EAR
TSTG
TJ
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
4
mJ
℃
℃
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Value
2.0
Unit
℃/W
℃/W
Rthj-c
Max.
Max.
Rthj-a
62
Data & specifications subject to change without notice
20030332
AP04N70BP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
/ -
600
650
700
-
-
-
-
-
-
V
V
V
VGS=0V, ID=1mA
VGS=0V, ID=1mA
/ A
/ H
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.6
-
-
2.4
4
V/℃
Ω
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=10V, ID=2A
VGS(th)
VDS=VGS, ID=250uA
VDS=10V, ID=2A
-
V
gfs
Forward Transconductance
2.5
-
-
S
Drain-Source Leakage Current (T=25oC)
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VDS=600V, VGS=0V
VDS=480V,VGS=0V
10
j
Drain-Source Leakage Current (T=150oC)
-
100
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
V =
± 30V
GS
-
±100
ID=4A
16.7
4.1
4.9
11
8.3
23.8
8.2
950
65
6
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=4A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω,VGS=10V
RD=75Ω
VGS=0V
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage3
VD=VG=0V , VS=1.5V
-
-
-
-
-
-
4
ISM
VSD
15
1.5
Tj=25℃, IS=4A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP04N70BP- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A
= BVDSS 650V
= BVDSS 700V
H
AP04N70BP
2.5
2
1.5
1
T C =25 o C
T C =150 o C
V
G =10V
V G =10V
V G =6.0V
V G =6.0V
2
V
G =5.0V
V G =5.0V
1.5
V G =4.5V
V G =4.5V
1
V G =4.0V
0.5
0.5
V
G =4.0V
V
G =3.5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
I D =2A
2.5
V G =10V
2
1.5
1
0.9
0.8
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP04N70BP
80
60
40
20
0
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C )
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
100
1
DUTY=0.5
10
0.2
0.1
10us
100us
1
0.1
1ms
0.05
PDM
0.02
0.01
t
10ms
100ms
SINGLE PULSE
T
0.1
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
T c =25 o C
Single Pulse
0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
100
1000
10000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP04N70BP
f=1.0MHz
Ciss
16
14
12
10
8
10000
100
1
I D =4A
V DS =320V
V DS =400V
V DS =480V
Coss
6
4
Crss
2
0
0
5
10
15
20
25
1
6
11
16
21
26
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
10
1
5
4
3
2
1
0
T j =150 o C
T j = 25 o C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
V SD (V)
T j , Junction Temperature ( o C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP04N70BP
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.5x RATED VDS
RG
G
10%
VGS
+
-
10V
VGS
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
10V
0.8 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
ID
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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