AP01L60T-HF [A-POWER]
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal;
| 型号： | AP01L60T-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal 开关 晶体管 |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP01L60T-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
600V
12Ω
D
S
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
160mA
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
TO-92
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+30
V
ID@TA=25℃
ID@TA=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
160
mA
mA
mA
W
100
300
PD@TA=25℃
TSTG
Total Power Dissipation
0.83
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
TJ
℃
Thermal Data
Symbol
Parameter
Value
150
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
℃/W
Data & specifications subject to change without notice
1
200906085
AP01L60T-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
600
-
0.8
-
-
-
V
V/℃
Ω
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A
-
-
12
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=+30V, VDS=0V
ID=100mA
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-
4
V
gfs
Forward Transconductance
Drain-Source Leakage Current
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
500
IGSS
Qg
-
+100
7
11
-
Qgs
Qgd
td(on)
tr
VDS=480V
1.4
3.4
8
VGS=10V
-
VDD=300V
-
ID=1A
5
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω,VGS=10V
RD=300Ω
13
9
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
260 420
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
20
3
-
-
-
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=160mA, VGS=0V
IS=1A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
345
1
1.5
V
-
-
ns
µC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP01L60T-HF
1.5
1.0
0.5
0.0
1.00
0.75
0.50
0.25
0.00
10V
5.0V
10V
6.0V
5.5V
5.0V
T A =150 o C
T A =25 o C
4.5V
V
G =4.0V
V G =4.0V
0
12
24
36
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
3.0
2.4
1.8
1.2
0.6
0.0
I D =0.5A
V
G =10V
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
3.6
3.2
2.8
2.4
2
1
T j = 150 o
C
T j = 25 o
C
0.1
1.6
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP01L60T-HF
f=1.0MHz
C iss
15
1000
100
10
I D = 100m A
V
DS = 480 V
12
9
6
C oss
C rss
3
1
0
0
1
2
3
4
5
6
7
8
9
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
0.20
0.15
0.10
0.05
0.00
1.2
0.8
0.4
0
25
50
75
100
125
150
25
50
75
100
125
150
T A , Case Temperature ( o C )
T A , Case Temperature( o C)
Fig 9. Maximum Drain Current v.s.
Case Temperature
Fig 10. Typical Power Dissipation
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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