AP01L60T [A-POWER]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | AP01L60T |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP01L60T
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
600V
12Ω
D
S
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
160mA
G
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is universally used for all commercial-industrial
applications.
TO-92
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 30
160
ID@TA=25℃
ID@TA=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
mA
mA
mA
W
100
300
PD@TC=25℃
TSTG
Total Power Dissipation
0.83
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
TJ
℃
Thermal Data
Symbol
Parameter
Value
150
Unit
Rthj-a
Thermal Resistance Junction-ambient
Max.
℃/W
Data & specifications subject to change without notice
200530031
AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
600
-
0.8
-
-
-
V
V/℃
Ω
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A
-
-
12
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-
4
-
V
gfs
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
j
Drain-Source Leakage Current (T=150oC)
j
-
100
IGSS
Qg
± 30V
±100
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VGS=
-
ID=1A
4.0
1.0
1.1
6.6
5.0
11.7
9.2
170
30.7
5.1
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=1A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=300Ω
VGS=0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
mA
V
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
IS=160mA, VGS=0V
-
-
-
-
160
1.2
VSD
Forward On Voltage3
Notes:
1.Pulse width limited by safe operating area.
3.Pulse width <300us , duty cycle <2%.
AP01L60T
1.5
1
0.75
0.5
10V
5.0V
10V
6.0V
5.5V
5.0V
T A =150 o
C
T A =25 o C
1
4.5V
0.5
V
GS =4.0V
V
GS =4.5V
0.25
0
0
0
12
24
36
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
2.8
2.4
2
I D =0.5A
V
GS =10V
1.6
1.2
0.8
0.4
0
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
4
3
2
1
1
T j = 150 o
C
T j = 25 o
C
0.1
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP01L60T
f=1.0MHz
16
1000
100
10
I D =1.0A
V
DS =480V
12
Ciss
Coss
Crss
8
4
0
1
0
1.5
3
4.5
6
1
10
19
28
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
40
30
20
10
0
1.2
0.9
0.6
0.3
0
25
50
75
100
125
150
0
50
100
150
T A , Case Temperature ( o C )
T A , Case Temperature ( o C )
Fig 9. Maximum Drain Current v.s.
Case Temperature
Fig 10. Typical Power Dissipation
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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