AP01L60AT_10 [A-POWER]
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness; 先进的功率MOSFET采用先进的加工技术，以实现尽可能低的导通电阻，非常有效和costeffectiveness成效
| 型号： | AP01L60AT_10 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP01L60AT
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
600V
12Ω
D
S
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
160mA
G
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
TO-92
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 30
160
ID@TA=25℃
ID@TA=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
mA
mA
mA
W
100
300
PD@TA=25℃
TSTG
Total Power Dissipation
0.83
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
TJ
℃
Thermal Data
Symbol
Parameter
Value
150
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
℃/W
Data & specifications subject to change without notice
201023073-1/4
AP01L60AT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
600
-
0.8
-
-
-
V
V/℃
Ω
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A
-
-
12
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=0.5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
-
4
-
V
gfs
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
j
Drain-Source Leakage Current (T=150oC)
j
-
100
IGSS
Qg
± 30V
±100
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=
-
ID=0.1A
6.0
1.0
2.5
6.6
5.0
11.7
9.2
170
30.7
5.1
10
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=1A
-
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=300Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
270
VDS=25V
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
mA
V
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
IS=160mA, VGS=0V
-
-
-
-
160
1.2
VSD
Forward On Voltage2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP01L60AT
1.5
1
0.75
0.5
10V
5.0V
10V
6.0V
5.5V
5.0V
T A =150 o C
T A =25 o C
1
4.5V
0.5
V GS =4.5V
V GS =4.0V
0.25
0
0
0
12
24
36
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
2.8
2.4
2
I D =0.5A
V
GS =10V
1.6
1.2
0.8
0.4
0
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
4
3
2
1
1
T j = 150 o
C
T j = 25 o
C
0.1
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP01L60AT
f=1.0MHz
16
1000
100
10
12
Ciss
Coss
Crss
I D =0.1A
DS =480V
V
8
4
0
1
0
2
4
6
8
1
10
19
28
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
0.2
0.8
0.6
0.4
0.2
0
0.15
0.1
0.05
0
25
50
75
100
125
150
0
50
100
150
T A , Case Temperature ( o C )
T A , Case Temperature ( o C )
Fig 9. Maximum Drain Current v.s.
Case Temperature
Fig 10. Typical Power Dissipation
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-92
E
Millimeters
SYMBOLS
MIN
4.32
4.1
NOM
4.83
4.8
MAX
A
D
E
5.34
5.3
3.1
3.9
4.7
b
----
0.38
---
-----
----
----
A
L
12.7
----
e1
1.27
SEATING
PLANE
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
D
b
e1
Part Marking Information & Packing : TO-92
Part Number
01L60AT
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
相关型号：
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