ZXTDE4M832TC [ZETEX]
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION; 双80V NPN及PNP 70V低饱和晶体管组合
| 型号： | ZXTDE4M832TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION |
| 文件： | 总8页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTDE4M832
MPPS™ Miniature Package Power Solutions
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR
COMBINATION
SUMMARY
NPN Transistor
V
= 80V; R
= 68m ;
= 3.5A
C
CEO
SAT
PNP Transistor
V
= -70V; R
= 117m ;
= -2.5A
C
CEO
SAT
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),
these low saturation NPN / PNP combination dual transistors offer lower on
state losses making them ideal for use in DC-DC circuits and various driving
and power-management functions.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
3mm x 2mm Dual Die MLP
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
C1
C2
FEATURES
B2
B1
•
•
•
•
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-185mV max @ 1A--NPN)
H
specified up to -5A
E2
FE
E1
I
= -3.5A Continuous Collector Current
C
•
3mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters
Charging circuits
Power switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
TAPE
QUANTITY
WIDTH PER REEL
ZXTDE4M832TA
ZXTDE4M832TC
7
8mm
8mm
3000
3mm x 2mm Dual MLP
underside view
13
10000
DEVICE MARKING
DE4
ISSUE 1 - JUNE 2002
1
ZXTDE4M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPN
100
80
PNP
-70
-70
-7.5
-3
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
V
CBO
CEO
EBO
V
7.5
5
V
I
I
I
A
CM
Continuous Collector Current (a)(f)
Base Current
3.5
-2.5
A
C
B
1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.5
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
3
24
W
mW/°C
Storage Temperature Range
Junction Temperature
T
T
-55 to +150
150
°C
°C
stg
j
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
R
R
R
R
R
R
83.3
51
θJA
θJA
θJA
θJA
θJA
θJA
125
111
73.5
41.7
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2
ZXTDE4M832
TYPICAL CHARACTERISTICS
10
1
10
V
CE(SAT)
V
CE(SAT)
Limited
Limited
1
DC
DC
1s
1s
100ms
100ms
0.1
0.01
0.1
10ms
10ms
1ms
Note (a)(f)
Single Pulse, Tamb=25°C
0.1
1ms
Note (a)(f)
100us
100us
0.01
Single Pulse, Tamb=25°C
1
1
10
100
0.1
10
100
V Collector-Emitter Voltage (V)
V
Collector-Emitter Voltage (V)
CE
CE
NPN Safe Operating Area
PNP Safe Operating Area
3.5
Tamb=25°C
2oz Cu
Note (a)(f)
80
60
40
20
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Note (e)(g)
2oz Cu
Note (a)(f)
D=0.5
1oz Cu
Note (d)(g)
Single Pulse
D=0.2
D=0.05
D=0.1
1oz Cu
Note (d)(f)
100µ 1m 10m 100m
1
10 100 1k
0
25
50
75 100 125 150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
225
200
175
150
125
100
75
2oz copper
Note (g)
Tamb=25°C
jmax=150°C
Continuous
1oz copper
Note (f)
T
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (f)
1oz copper
Note (g)
50
1oz copper
Note (f)
2oz copper
Note (g)
25
0
0.1
1
10
100
0.1
1
10
100
BoardCuArea(sqcm)
BoardCuArea(sqcm)
Thermal Resistance v Board Area
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZXTDE4M832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
I =100A
Collector-Base Breakdown
Voltage
V
V
V
100
180
V
(BR)CBO
C
Collector-Emitter Breakdown
Voltage
80
110
8.2
V
I =10mA*
C
(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
7.5
V
I =100A
E
(BR)EBO
CBO
I
I
I
25
25
25
nA
nA
nA
V
V
V
=80V
=6V
CB
EB
CE
Emitter Cut-Off Current
EBO
Collector Emitter Cut-Off Current
=65V
CES
Collector-Emitter Saturation
Voltage
V
15
45
145
160
240
20
60
185
200
325
mV
mV
mV
mV
mV
I =0.1A, I =10mA*
C B
CE(sat)
I =0.5A, I =50mA*
C
B
I =1A, I =20mA
C B
I =1.5A, I =50mA
C
B
I =3.5A, I =300mA
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
1.09
0.96
1.175
1.05
V
V
I =3.5A, I =300mA*
C B
BE(sat)
BE(on)
FE
I =3.5A, V =2V*
C
CE
Static Forward Current Transfer
Ratio
200
300
110
60
450
450
170
90
30
10
I =10mA, V =2V*
C CE
900
I =200mA, V =2V*
C CE
I =1A, V =2V*
C
CE
I =1.5A, V =2V*
C
CE
20
I =3A, V =2V*
C CE
I =5A, V =2V*
C CE
Transition Frequency
f
100
160
MHz I =50mA, V =10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
11.5
86
18
pF
ns
ns
V
=10V, f=1MHz
obo
(on)
(off)
CB
t
t
V
=10V, I =1A
C
=I =25mA
CC
I
B1 B2
Turn-Off Time
1128
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
4
ZXTDE4M832
NPN TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2002
5
ZXTDE4M832
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
I =-100A
Collector-Base Breakdown
Voltage
V
V
V
-70
-150
V
(BR)CBO
C
Collector-Emitter Breakdown
Voltage
-70
-125
-8.5
V
I =-10mA*
C
(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-7.5
V
I =-100A
E
(BR)EBO
CBO
I
I
I
-25
-25
-25
nA
nA
nA
V
V
V
=-55V
=-6V
CB
EB
CE
Emitter Cut-Off Current
EBO
Collector Emitter Cut-Off Current
=-55V
CES
Collector-Emitter Saturation
Voltage
V
-35
-50
mV
mV
mV
mV
I =-0.1A, I =-10mA*
C B
CE(sat)
-135
-140
-175
-200
-220
-260
I =-0.5A, I =-20mA*
C B
I =-1.0A, I =-100mA*
C
B
I =-1.5A, I =-200mA*
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
0.94
0.78
1.05
1.00
V
V
I =-1.5A, I =-200mA*
C B
BE(sat)
BE(on)
FE
I =-1.5A, V =-5V*
C
CE
Static Forward Current Transfer
Ratio
300
300
175
40
470
450
275
60
I =-10mA, V =-5V*
C CE
I =-100mA, V =-5V*
C
C
CE
I =-1A, V =-5V*
CE
I =-1.5A, V =-5V*
C
CE
10
I =-3A, V =-5V*
C CE
Transition Frequency
f
150
180
MHz I =-50mA, V =-10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
14
40
20
pF
ns
ns
V
=-10V, f=1MHz
obo
(on)
(off)
CB
t
t
V
=-50V, I =-1A
C
=I =-50mA
CC
I
B1 B2
Turn-Off Time
700
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
6
ZXTDE4M832
PNP TYPICAL CHARACTERISTICS
0.6
0.6
25°C
IC/IB=10
0.5
0.4
0.5
0.4
IC/IB=50
IC/IB=20
IC/IB=10
IC/IB=5
0.3
0.2
0.3
0.2
100°C
25°C
-55°C
0.1
0.0
0.1
0.0
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
Collector Current
Collector Current
VBE(SAT) vs IC
VCE(SAT) vs IC
1.6
1.4
1.2
1.2
1.0
0.8
VCE=5V
IC/IB=5
100°C
-55°C
1.0
0.8
0.6
0.4
0.2
0.0
450
225
25°C
25°C
0.6
0.4
0.2
100°C
-55°C
0.0
1mA
1mA
10mA
100mA
1A
10A
10mA
100mA
1A
10A
Collector Current
Collector Current
hFE vs IC
VBE(SAT) vs IC
SINGLE PULSE TEST Tamb = 25 deg C
10
1.0
0.8
0.6
0.4
0.2
VCE=5V
-55°C
25°C
1.0
0.1
D.C.
1s
100ms
10ms
1ms
100°C
100µs
0.0
1mA
0.01
0.1
1
10
100
10mA
100mA
1A
10A
Collector Current
VCE (VOLTS)
Safe Operating Area
VBE(ON) vs IC
ISSUE 1 - JUNE 2002
7
ZXTDE4M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.24
0.17
MAX.
1.00
0.05
0.75
0.25
0.34
0.30
MIN.
MAX.
0.039
A
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
A1
A2
A3
b
0.002
0.0255
0.006
0.009
0.0066
0.0295
0.0098
0.013
E2
E4
L
0.43
0.63
0.36
0.017
0.0249
0.014
0.16
0.20
0.006
0.0078
0.00
0.45
0.0157
0.005
b1
D
0.0118
L2
r
0.125
3.00 BSC
0.118 BSC
0.075 BSC
0.0029 BSC
D2
D3
0.82
1.01
1.02
1.21
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
0.0397
0.0476
© Zetex plc 2002
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ISSUE 1 - JUNE 2002
8
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DIODES
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