ZXTEM322TA [ZETEX]
MPPS Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR; MPPS微型封装的电源解决方案80V NPN低饱和晶体管
| 型号： | ZXTEM322TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | MPPS Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTEM322
TM
MPPS Miniature Package Pow er Solutions
80V NPN LOW SATURATION TRANSISTOR
SUMMARY
NPN —- V
= 80V; R
= 68m ; I = 3.5A
SAT C
CEO
DESCRIPTION
Packaged in the new innovative 2m m x 2m m MLP (Micro Leaded Package)
outline, these new 4th generation low saturation dual PNP transistors offer
extrem ely low on state losses m aking them ideal for use in DC-DC circuits and
various driving and power m anagem ent functions.
Additionally users gain several other key benefits:
Perform ance capability equivalent to m uch larger packages
Im proved circuit efficiency & pow er levels
PCB area and device placem ent savings
Low er Package Height (0.9m m nom )
MLP322
Reduced com ponent count
FEATURES
• Low Equivalent On Resistance
• Extrem ely Low Saturation Voltage (185m V m ax @1A)
• hFE specified up to 5A
• IC=-3.5A Continuous Collector Current
• 2m m x 2m m MLP
APPLICATIONS
• DC - DC Converters
• DC - DC Modules
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTEM322TA
7”
8m m
8m m
3000
ZXTEM322TC
13”
10000
Underside View
DEVICE MARKING
• SE
ISSUE 1 - J UNE 2003
1
S E M IC O N D U C T O R S
ZXTEM322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
100
80
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
V
V
V
CBO
CEO
EBO
V
7.5
V
Pe a k Pu ls e Cu rre n t
I
I
I
5
A
CM
(a )
Co n tin u o u s Co lle cto r Cu rre n t
3.5
A
C
B
Ba s e Cu rre n t
1000
m A
(a )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
P
P
P
P
1.5
12
W
m W/ЊC
D
D
D
D
(b )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
2.45
19.6
W
m W/ЊC
(d )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1
8
W
m W/ЊC
(e )
Po w e r Dis s ip a tio n a t TA=25°C
3
W
Lin e a r De ra tin g Fa cto r
24
m W/ЊC
Op e ra tin g & S to ra g e Te m p e ra tu re Ra n g e
J u n ctio n Te m p e ra tu re
T :T
-55 to +150
150
ЊC
ЊC
j
s tg
T
j
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83
UNIT
ЊC/W
ЊC/W
ЊC/W
ЊC/W
(a )
J u n ctio n to Am b ie n t
R
R
R
R
⍜J A
⍜J A
⍜J A
⍜J A
(b )
J u n ctio n to Am b ie n t
51
(d )
J u n ctio n to Am b ie n t
125
42
(e )
J u n ctio n to Am b ie n t
NOTES
(a) For a single device surface m ounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached.
(b) For a single device surface m ounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions m easured at tՅ5 secs w ith all exposed pads
attached.
(c) Repetitive rating - pulse width lim ited by m ax junction tem perature. Refer to Transient Therm al Im pedance graph.
(d) For a single device surface m ounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions w ith m inim al lead connections only.
(e) For a single device surface m ounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.
(f) The m inim um copper dim ensions required for m ounting are no sm aller than the exposed m etal pads on the base of the device, as shown in
the package dim ensions data. The therm al resistance for a device m ounted on 1.5m m thick FR4 board using m inim um copper of 1oz weight and
1m m wide tracks is Rth= 300°C/W giving a power rating of Ptot=420m W
ISSUE 1 - J UNE 2003
2
S E M IC O N D U C T O R S
ZXTEM322
TYPICAL CHARACTERISTICS
ISSUE 1 - J UNE 2003
3
S E M IC O N D U C T O R S
ZXTEM322
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
100
80
TYP. MAX. UNIT CONDITIONS
Co lle cto r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r-Em itte r Bre a kd o w n Vo lta g e
Em itte r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r Cu t-Off Cu rre n t
V
V
V
180
110
8.2
V
V
I =100A
C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
I =10m A*
C
7.5
V
I =100A
E
I
I
I
25
25
25
nA
nA
nA
V
V
V
=80V
=6V
CB
EB
CE
Em itte r Cu t-Off Cu rre n t
EBO
Co lle cto r Em itte r Cu t-Off Cu rre n t
Co lle cto r-Em itte r S a tu ra tio n Vo lta g e
=65V
CES
V
15
45
20
60
m V I =0.1A, I =10m A*
C B
CE(s a t)
m V I =0.5A, I =50m A*
C
B
I =1A, I =20m A*
145
160
240
185
200
325
m V
m V
m V
C
B
I =1.5A, I =50m A*
C
B
I =3.5A, I =300m A*
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e
Ba s e -Em itte r Tu rn -On Vo lta g e
V
V
1.09 1.175
V
V
I =3.5A, I =300m A*
C B
BE(s a t)
BE(o n )
FE
0.96
1.05
I =3.5A, V =2V*
C CE
S ta tic Fo rw a rd Cu rre n t Tra n s fe r Ra tio
h
200
300
110
60
450
450
170
90
I =10m A, V =2V*
C CE
900
I =200m A, V =2V*
C
CE
I =1A, V =2V*
C
CE
I =1.5A, V =2V*
C
CE
I =3A, V =2V*
20
30
C
CE
I =5A, V =2V*
10
C
CE
Tra n s itio n Fre q u e n cy
f
100
160
MHz I =50m A, V =10V
T
C
CE
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
C
t
11.5
86
18
pF
ns
ns
V
=10A, f=1MHz
o b o
CB
V
=10V, I =1A
C
=I =25m A
(o n )
(o ff)
CC
I
B1 B2
Tu rn -Off Tim e
t
1128
*Measured under pulsed conditions. Pulse width=300s. Duty cycle Յ 2%
ISSUE 1 - J UNE 2003
4
S E M IC O N D U C T O R S
ZXTEM322
TYPICAL CHARACTERISTICS
ISSUE 1 - J UNE 2003
5
S E M IC O N D U C T O R S
ZXTEM322
PACKAGE OUTLINE
Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim etres
Inches
Min Max
0.0315 0.0393
0.00 0.002
Millim etres
Min Max
0.65 REF
2.00 BSC
Inches
Min Max
DIM
DIM
Min
0.80
0.00
0.65
0.15
0.18
0.17
Max
A
A1
A2
A3
b
1.00
0.05
0.75
0.25
0.28
0.30
e
E
0.0255 REF
0.0787 BSC
0.0255 0.0295
0.0059 0.0098
0.0070 0.0110
0.0066 0.0118
0.0787 BSC
E2
E4
L
0.79
0.99
0.68
0.45
0.031
0.039
0.48
0.20
0.0188 0.0267
0.0078 0.0177
0.005 REF
b1
D
L2
r
0.125 MAX.
0.075 BSC
2.00 BSC
0.0029 BSC
D2
D4
1.22
0.56
1.42
0.76
0.0480 0.0559
0.0220 0.0299
⍜
0Њ
12Њ
0Њ
12Њ
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ISSUE 1 - J UNE 2003
6
S E M IC O N D U C T O R S
相关型号：
ZXTN04120HKTC
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
DIODES
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