ZXTN04120HKTC [DIODES]
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2;
| 型号： | ZXTN04120HKTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2 开关 晶体管 |
| 文件： | 总7页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXTN04120HK
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252
Features
Mechanical Data
Case: TO252 (DPAK)
BVCEO > 120V
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable
per MIL-STD-202, Method 208
BVCBO > 140V
IC = 1.5A High Continuous current
hFE > 2k for High Gain @ 1A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.34 grams (approximate)
Applications
DC Fans
Regulator Transistors
Relays
Solenoid Driving
C
C
C
B
TO252 (DPAK)
B
E
Top View
Top View
Pin-Out
E
Equivalent Circuit
Ordering Information (Note 4)
Product
ZXTN04120HKTC
Package
TO252 (DPAK)
Marking
ZXTN04120H
Reel size (inches)
Tape width (mm)
Quantity per reel
13
16
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
ZXTN04120H = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 13 = 2013)
WW = Week Code 01 - 52
ZXTN
04120H
YYWW
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January 2014
© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN04120HK
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
140
120
14
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
1.5
4
A
A
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
3.9
2
Power Dissipation
W
PD
1.5
32
62.5
80
9
Thermal Resistance, Junction to Ambient Air
RθJA
°C/W
Thermal Resistance, Junction to Leads
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RθJL
RθJC
(Note 9)
11
-55 to +150
°C
TJ, TSTG
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Thermal resistance from junction to the top of the case.
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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January 2014
© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN04120HK
Thermal Characteristics and Derating Information
VCE(sat)
Limit
1
VCE(sat)
Limit
1
100m
10m
DC
DC
1s
100ms
1s
100ms
100m
10m
10ms
10ms
Tamb=25°C
Tamb=25°C
1ms
10
1ms
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
100µs
100µs
1
10
100
1
100
VCE Collector-Emitter Voltage (V)
VCE Collector-Emitter Voltage (V)
Safe Operating Area
Safe Operating Area
Tamb=25°C
60
50
40
30
20
10
0
Tamb=25°C
30
20
10
0
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.2
D=0.2
Single Pulse
D=0.05
Single Pulse
D=0.05
D=0.1
D=0.1
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.0
Single Pulse
Tamb=25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
2oz FR4
100
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m 10m 100m
1
10
100
1k
0
20 40 60 80 100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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January 2014
© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN04120HK
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BVCBO
BVCEO
BVEBO
Min
140
120
14
Typ
—
Max
—
Unit
V
Test Condition
IC = 100µA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
—
—
V
IC = 10mA
IE = 100µA
—
—
V
VCB = 120V
100
10
nA
µA
—
Collector-Base Cutoff Current
—
ICBO
VCB = 120V, TA = +120°C
Collector-Emitter Cutoff Current
Emitter Cutoff Current
—
—
—
—
100
100
nA
nA
ICES
IEBO
VCE = 120V
VEB = 8V
IC = 50mA, VCE = 5V
2,000
5,000
2,000
500
—
—
—
—
—
—
I
C = 500mA, VCE = 5V
DC Current Gain (Note 11)
—
hFE
100,000
—
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
I
C = 250mA, IB = 0.25mA
1
1.5
—
—
—
—
Collector-Emitter Saturation Voltage (Note 11)
V
VCE(sat)
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA
IC = 1A, VCE = 5V
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance (Note 11)
—
—
—
—
—
—
90
15
1.8
1.7
—
V
V
VBE(sat)
VBE(on)
Cibo
pF
pF
Output Capacitance (Note 11)
—
Cobo
VCE = 10V, IC = 100mA,
f=20MHz
Current Gain-Bandwidth Product (Note 11)
150
—
—
MHz
fT
Turn-On Time
Turn-Off Time
—
—
0.5
1.6
—
—
µs
µs
ton
toff
VCC = 10V, IC = 500mA
IB1 = -IB2 = 0.5mA
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
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January 2014
© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN04120HK
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
4
3
2
1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Tamb=25°C
150°C
IC/IB=1000
100°C
25°C
IC/IB=2000
IC/IB=1000
IC/IB=700
-55°C
IC/IB=400
0
10m
100m
1
10m
100m
1
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.6
VCE=5V 20000
IC/IB=1000
25°C
-55°C
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
150°C
100°C
25°C
150°C
100°C
-55°C
10m
100m
1
10m
100m
1
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VCE=5V
25°C
-55°C
150°C
100°C
10m
100m
1
IC Collector Current (A)
VBE(ON) v IC
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January 2014
© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN04120HK
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
TO252
Dim Min Max Typ
E
b3
A
A
2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
c2
L3
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
E1
A2
D
H
D
6.00 6.20 6.10
D1 5.21
e
2.286
E
6.45 6.70 6.58
L4
A1
E1 4.32
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
e
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
3X b
2X b2
a
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Value (in mm)
Y2
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
Note:
12. For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances
between device Terminals and PCB tracking.
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© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN04120HK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
ZXTN04120HK
Document number: DS36554 Rev. 3 - 2
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