ZXTN04120HFFTA [DIODES]
120V, SOT23F, NPN medium power Darlington transistor; 120V ， SOT23F ， NPN型中功率达林顿晶体管
| 型号： | ZXTN04120HFFTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 120V, SOT23F, NPN medium power Darlington transistor |
| 文件： | 总8页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTN04120HFF
120V, SOT23F, NPN medium power Darlington transistor
Summary
BV
> 120V
CEO
I
= 1A
C(cont)
V
< 1.5V @ 1A
CE(sat)
P = 1.5W
D
Complementary part number ZXTP05120HFF
Description
C
B
This high performance NPN Darlington transistor is housed in
the small outline SOT23 flat package for applications where
space is at a premium.
Features
•
•
•
•
Darlington transistor
120 volt
1 amp continuous rating
Small outline surface mount SOT23 flat package
E
Applications
E
B
•
•
Lamp, relay and solenoid drive
Lighting
C
Ordering information
Pinout - top view
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTN04120HFFTA
7
8
3000
Device marking
1F6
Issue 1 - May 2007
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ZXTN04120HFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
140
V
CBO
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
Continuous collector current (c)
Peak pulse current
120
10
V
V
I
1
A
A
A
W
C
I
4
CM
Base current
I
0.5
0.84
B
(a)
(b)
(c)
(d)
P
P
P
P
Power dissipation @ T
Linear derating factor
Power dissipation @ T
Linear derating factor
Power dissipation @ T
Linear derating factor
Power dissipation @ T
Linear derating factor
=25°C
=25°C
=25°C
=25°C
D
D
D
D
amb
amb
amb
amb
6.72
1.34
mW/°C
W
10.72
1.5
mW/°C
W
12.0
2.0
mW/°C
W
16.0
mW/°C
°C
Operating and storage temperature range
T , T
- 55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
149
°C/W
Junction to ambient
ꢀJA
(b)
R
93
83
60
Junction to ambient
ꢀJA
°C/W
°C/W
°C/W
(c)
R
Junction to ambient
ꢀJA
(d)
R
Junction to ambient
ꢀJA
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
Issue 1 - May 2007
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ZXTN04120HFF
Characteristics
Issue 1 - May 2007
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ZXTN04120HFF
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV
140
120
10
300
140
16
V
V
V
I = 100ꢁA
C
CBO
CEO
EBO
(*)
Collector-emitter breakdown BV
voltage (base open)
I = 10mA
C
Emitter-base breakdown
voltage
BV
I = 100ꢁA
E
Collector-base cut-off current I
<1
100
10
nA
ꢁA
ꢁA
V
V
V
= 120V
CBO
CB
CB
CE
= 120V, T
= 120V
= 100°C
amb
Collector-emitter cut-off
current
I
I
<0.1
10
CES
Emitter-base cut-off current
<1
100
0.9
nA
V
V
= 8V
EBO
EB
(*)
Collector-emitter saturation
voltage
V
0.8
I = 250mA, I = 0.25mA
CE(sat)
BE(sat)
C
B
(*)
(*)
(*)
1.1
1.1
1.5
1.5
V
V
V
I = 1A, I = 1mA
C
B
I = 2A, I = 5mA
C
B
Base-emitter saturation
voltage
V
1.55 1.70
I = 1A, I = 1mA
C
B
(*)
Base-emitter turn-on voltage V
1.45 1.70
11k
V
I = 1A, V = 5V
BE(on)
C
CE
(*)
Static forward current
transfer ratio
h
3K
3K
3K
1K
I = 50mA, V = 5V
FE
C
CE
(*)
12k
I = 500mA, V = 5V
C
CE
(*)
10k
5k
30K
I = 1A, V = 5V
C
CE
(*)
I = 2A, V = 5V
C
CE
Transition frequency
f
120
MHz I = 100mA, V = 10V
T
C
CE
f = 20MHz
(*)
Input capacitance
C
C
68
90
25
pF
pF
V
= 500mV, f = 1MHz
ibo
EB
(*)
Output capacitance
12.8
V
V
= 10V, f = 1MHz
obo
CB
CC
Delay time
Rise time
t
t
t
t
507
136
910
369
ns
ns
ns
ns
= 10V
d
I = 500mA,
C
r
s
f
I
= I = 0.5mA
B2
B1
Storage time
Fall time
NOTES:
(*) Measured under pulsed conditions. Pulse width ꢂ300ꢁs; duty cycle ꢂ2%.
Issue 1 - May 2007
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ZXTN04120HFF
Typical characteristics
Issue 1 - May 2007
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ZXTN04120HFF
Intentionally left blank
Issue 1 - May 2007
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ZXTN04120HFF
Package outline - SOT23F
c
D
e1
e
b
b
L1
L
E
E1
b
A1
R
A
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Min.
0.80
0.00
0.35
0.10
2.80
Max.
Min.
Max.
Min.
Max.
2.50
1.70
0.68
0.50
0.15
12°
Max.
0.0984
0.0669
0.0268
0.0161
0.0059
12°
A
A1
b
1.00
0.10
0.45
0.20
3.00
0.0315
0.00
0.0394
0.0043
0.0161
0.0079
0.1181
E
E1
L
2.30
1.50
0.48
0.30
0.05
0°
0.0906
0.0590
0.0189
0.0153
0.0019
0°
0.0153
0.0043
0.1102
c
L1
R
D
e
0.95 ref
0.0374 ref
O
-
e1
1.80
2.00
0.0709
0.0787
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 1 - May 2007
© Zetex Semiconductors plc 2007
7
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ZXTN04120HFF
Definitions
Product change
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service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
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For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
Issue 1 - May 2007
© Zetex Semiconductors plc 2007
8
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DIODES
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