ZXMN3A06DN8TC [ZETEX]
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET; 双30V N沟道增强型MOSFET
| 型号： | ZXMN3A06DN8TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A06DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
SO8
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
PINOUT
ZXMN3A06DN8TA
ZXMN3A06DN8TC
7’‘
12mm
12mm
500 units
2500 units
13’‘
DEVICE MARKING
ZXMN
3A06D
Top view
ISSUE 2 - OCTOBER 2002
1
ZXMN3A06DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
Ϯ20
Continuous Drain Current (V =10V; T =25°C)(b)(d)
GS
I
6.2
5.0
4.9
A
A
D
(V =10V; T =70°C)(b)(d)
GS
(V =10V; T =25°C)(a)(d)
GS
A
Pulsed Drain Current (c)
I
I
I
30
3.7
30
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
SM
Power Dissipation at T =25°C (a)(d)
A
P
P
P
1.25
10
W
D
D
D
Linear Derating Factor
mW/°C
Power Dissipation at T =25°C (a)(e)
A
Linear Derating Factor
1.80
14.5
W
mW/°C
Power Dissipation at T =25°C (b)(d)
A
Linear Derating Factor
2.1
17.3
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
100
69
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
R
R
R
θJA
θJA
θJA
58
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
ISSUE 2 - OCTOBER 2002
2
ZXMN3A06DN8
TYPICAL CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
3
ZXMN3A06DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
30
V
A
nA
V
I
=250µA, V =0V
GS
(BR)DSS
D
I
I
0.5
V
=30V, V =0V
DS GS
DSS
GSS
100
V
=±20V, V =0V
GS
DS
Gate-Source Threshold Voltage
V
R
1
I
=250A, V = V
GS
GS(th)
DS(on)
DS
D
Static Drain-Source On-State Resistance
(1)
0.035
0.050
V
V
=10V, I =9A
⍀
⍀
GS
GS
D
=4.5V, I =7.4A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
13.5
S
V
=15V,I =9A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
796
137
83.5
pF
pF
pF
iss
V
=25 V, V =0V,
GS
DS
oss
rss
f=1MHz
t
t
t
t
3.0
6.4
ns
ns
ns
ns
nC
d(on)
r
V
R
=15V, I =3.5A
D
=6.0⍀, V =10V
GS
DD
G
Turn-Off Delay Time
Fall Time
21.6
9.4
d(off)
f
Gate Charge
Q
9.2
V
=15V,V =5V,
GS
g
DS
ID=3.5A
Total Gate Charge
Q
Q
Q
17.5
2.3
nC
nC
nC
g
V
=15V,V =10V,
GS
DS
ID=3.5A
Gate-Source Charge
Gate-Drain Charge
gs
gd
3.1
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.85
0.95
V
T =25°C, I =5.1A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
t
17.8
11.6
ns
T =25°C, I =3.5A,
J F
di/dt= 100A/µs
rr
Q
nC
rr
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - OCTOBER 2002
4
ZXMN3A06DN8
TYPICAL CHARACTERISTICS
10V
10V
3.5V
3V
2.5V
4V
T = 25°C
T = 150°C
4V
3V
10
10
1
2.5V
2V
1
2V
1.5V
VGS
VGS
0.1
0.01
0.1
1.5V
0.01
1V
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
IDG=S 1.5A
RDS(on)
10
1
T = 150°C
T = 25°C
VGS(th)
V
=VDS
IDG=S 250uA
VDS = 10V
0.1
1
2
3
4
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
100
100
T = 25°C
2V
T = 150°C
10
1
VGS
10
1
2.5V
3V
T = 25°C
1.0
0.1
0.01
4V
10V
0.1
0.2
0.4
0.6
0.8
1.4
Source-Drain Voltage1(.V2)
0.1
1
10
V
ID Drain Current (A)
SD
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 2 - OCTOBER 2002
5
ZXMN3A06DN8
TYPICAL CHARACTERISTICS
1200
1000
800
10
VGS =0V
f =1MHz
ID =3.5A
8
6
4
2
0
C
ISS
COSS
600
400
200
C
RSS
VDS = 15V
15
0
0.1
10
0
5
10
20
VDS - Drain1- SourceVoltage(V)
Q - Charge (nC)
Gate-SourceVoltagevGateCharge
Capacitance v Drain-Source Voltage
Gate Charge Test Circuit
Basic Gate Charge Waveform
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 2 - OCTOBER 2002
6
ZXMN3A06DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MIN
MILLIMETRES
DIM
MAX
0.069
0.010
0.197
0.244
0.157
0.050
MIN
1.35
0.10
4.80
5.80
3.80
0.40
MAX
1.75
0.25
5.00
6.20
4.00
1.27
A
A1
D
H
E
0.053
0.004
0.189
0.228
0.150
0.016
L
e
0.050 BSC
1.27 BSC
b
0.013
0.008
0Њ
0.020
0.010
8Њ
0.33
0.19
0Њ
0.51
0.25
8Њ
c
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
⍜
h
0.010
0.020
0.25
0.50
© Zetex plc 2002
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - OCTOBER 2002
7
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