ZXMN3A14F [ZETEX]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | ZXMN3A14F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=30V : R
(
)=0.065 ; I =3.9A
(BR)DSS
DS on D
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Managem ent functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A14FTA
7”
8m m
8m m
3000 units
ZXMN3A14FTC
13”
10000 units
DEVICE MARKING
• 314
PROVISIONAL ISSUE B - SEPTEMBER 2003
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S E M IC O N D U C T O R S
ZXMN3A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
Dra in -S o u rce Vo lta g e
Ga te -S o u rce Vo lta g e
V
V
30
V
DS S
GS
Ϯ20
V
(b )
(b )
(a )
Co n tin u o u s Dra in Cu rre n t @ V = 10V; T =25°C
I
3.9
A
GS
A
D
@ V = 10V; T =70°C
3.2
A
GS
A
@ V = 10V; T =25°C
3.2
A
GS
A
(c)
Pu ls e d Dra in Cu rre n t
I
I
I
18
A
A
DM
(b )
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )
2.3
S
(c)
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )
18
A
S M
(a )
Po w e r Dis s ip a tio n a t T =25°C
A
P
1
W
D
Lin e a r De ra tin g Fa cto r
8
1.5
m W/°C
W
(b )
Po w e r Dis s ip a tio n a t T =25°C
A
P
D
Lin e a r De ra tin g Fa cto r
12
m W/°C
°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
125
UNIT
°C/W
°C/W
(a )
J u n ctio n to Am b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to Am b ie n t
83
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 5 sec.
(c) Repetitive rating - 25m m x 25m m FR4 PCB, D=0.02, pulse width 300s - pulse width lim ited by m axim um junction tem perature.
PROVISIONAL ISSUE B - SEPTEMBER 2003
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S E M IC O N D U C T O R S
ZXMN3A14F
CHARACTERISTICS
PROVISIONAL ISSUE B - SEPTEMBER 2003
3
S E M IC O N D U C T O R S
ZXMN3A14F
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
I
30
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DS S
1
VDS = 30V, VGS =0V
VGS =Ϯ12V, VDS =0V
ID= 250A, VDS =VGS
VGS = 10V, ID= 3.2A
VGS = 4.5V, ID= 2.6A
VDS = 15V, ID= 3.2A
DS S
GS S
I
100
Ga te -S o u rce Th re s h o ld Vo lta g e
V
1.0
GS (th )
DS (o n )
S ta tic Dra in -S o u rce On -S ta te
R
0.048 0.065
0.069 0.095
⍀
(1)
Re s is ta n ce
⍀
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
7.1
S
fs
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
448
82
pF
pF
pF
is s
VDS = 15V, VGS =0V
f=1MHz
Ou tp u t Ca p a cita n ce
o s s
rs s
Re ve rs e Tra n s fe r Ca p a cita n ce
49
(2) (3)
S WITCHING
Tu rn -On -De la y Tim e
Ris e Tim e
t
t
t
t
2.4
2.5
13.1
5.3
8.6
1.4
1.8
ns
ns
d (o n )
VDD= 15V, VGS = 10V
r
I = 1A
D
Tu rn -Off De la y Tim e
Fa ll Tim e
ns
d (o ff)
f
RG≅6.0⍀
ns
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te Dra in Ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
VDS = 15V, VGS = 10V
ID= 3.2A
g
g s
g d
(1)
Dio d e Fo rw a rd Vo lta g e
V
t
0.85
0.95
V
Tj=25°C, IS = (2.5)A,
S D
VGS =0V
(3)
Re ve rs e Re co ve ry Tim e
13
7
ns
Tj=25°C, IF= (1.6)A,
rr
(3)
Re ve rs e Re co ve ry Ch a rg e
Q
NC
d i/d t=100A/s
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - SEPTEMBER 2003
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S E M IC O N D U C T O R S
ZXMN3A14F
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - SEPTEMBER 2003
5
S E M IC O N D U C T O R S
ZXMN3A14F
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE B - SEPTEMBER 2003
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S E M IC O N D U C T O R S
ZXMN3A14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MIN
MILLIMETRES
INCHES
DIM
DIM
MIN
2.67
1.20
ᎏ
MAX
3.05
1.40
1.10
0.53
0.15
MAX
0.120
0.055
0.043
0.021
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
MIN
MAX
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
M
N
⍜
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
G
1.90 NOM
10Њ TYP
© Zetex plc 2003
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PROVISIONAL ISSUE B - SEPTEMBER 2003
7
S E M IC O N D U C T O R S
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