ZXMN3A14FTA [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | ZXMN3A14FTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=30V : R
(
)=0.065 ; I =3.9A
(BR)DSS
DS on D
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A14FTA
7”
8mm
8mm
3000 units
ZXMN3A14FTC
13”
10000 units
DEVICE MARKING
• 314
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXMN3A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
30
V
DSS
GS
Ϯ20
V
(b)
(b)
(a)
Continuous Drain Current @ V = 10V; T =25°C
I
3.9
A
GS
A
D
@ V = 10V; T =70°C
3.2
A
GS
A
@ V = 10V; T =25°C
3.2
A
GS
A
(c)
Pulsed Drain Current
I
I
I
18
A
A
DM
S
(b)
Continuous Source Current (Body Diode)
2.3
(c)
Pulsed Source Current (Body Diode)
18
A
SM
(a)
Power Dissipation at T =25°C
A
P
1
W
D
Linear Derating Factor
8
1.5
mW/°C
W
(b)
Power Dissipation at T =25°C
A
P
D
Linear Derating Factor
12
mW/°C
°C
Operating and Storage Temperature Range
T , T
-55 to +150
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
125
UNIT
°C/W
°C/W
(a)
Junction to Ambient
R
R
⍜JA
⍜JA
(b)
Junction to Ambient
83
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
ZXMN3A14F
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMN3A14F
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
I
30
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DSS
1
VDS= 30V, VGS=0V
VGS=Ϯ12V, VDS=0V
ID= 250A, VDS=VGS
VGS= 10V, ID= 3.2A
VGS= 4.5V, ID= 2.6A
VDS= 15V, ID= 3.2A
DSS
GSS
I
100
Gate-Source Threshold Voltage
V
R
1.0
GS(th)
DS(on)
Static Drain-Source On-State
0.048 0.065
0.069 0.095
⍀
(1)
Resistance
⍀
(1) (3)
Forward Transconductance
g
7.1
S
fs
(3)
DYNAMIC
Input Capacitance
C
C
C
448
82
pF
pF
pF
iss
VDS= 15V, VGS=0V
f=1MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
49
(2) (3)
SWITCHING
Turn-On-Delay Time
Rise Time
t
t
t
t
2.4
2.5
13.1
5.3
8.6
1.4
1.8
ns
ns
ns
ns
nC
nC
nC
d(on)
VDD= 15V, VGS= 10V
r
I = 1A
D
Turn-Off Delay Time
Fall Time
d(off)
f
RG≅6.0⍀
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Q
Q
Q
VDS= 15V, VGS= 10V
ID= 3.2A
g
gs
gd
(1)
Diode Forward Voltage
V
0.85
0.95
V
Tj=25°C, IS= (2.5)A,
SD
V
GS=0V
(3)
Reverse Recovery Time
t
13
7
ns
Tj=25°C, IF= (1.6)A,
rr
(3)
Reverse Recovery Charge
Q
NC
di/dt=100A/s
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
ZXMN3A14F
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
5
SEMICONDUCTORS
ZXMN3A14F
TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
6
SEMICONDUCTORS
ZXMN3A14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
INCHES
DIM
DIM
MIN
2.67
1.20
ᎏ
MAX
3.05
1.40
1.10
0.53
0.15
MIN
MAX
0.120
0.055
0.043
0.021
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
MIN
MAX
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
0.013
0.0004
0.083
0.018
L
0.37
0.085
0.015
M
N
⍜
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
G
1.90 NOM
10Њ TYP
© Zetex Semiconductors plc 2005
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Americas
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Corporate Headquarters
Zetex GmbH
Zetex Inc
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Zetex Semiconductors plc
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USA
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Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
7
SEMICONDUCTORS
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