ZXMN3A14FTA [TYSEMI]
30V N-CHANNEL ENHANCEMENT MODE MOSFET Low on-resistance; 30V N沟道增强型MOSFET的低导通电阻
| 型号： | ZXMN3A14FTA |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET Low on-resistance |
| 文件： | 总3页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low on-resistance
Fast switching speed
Low gate charge
Low threshold
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Max ID
BVDSS
Max RDS(on)
T
A = 25°C
(Note 4)
3.2A
65mΩ @ VGS = 10V
95mΩ @ VGS = 4.5V
30V
2.6A
Description and Applications
Mechanical Data
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
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Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
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DC - DC converters
Power management functions
Disconnect switches
Motor control
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Weight: 0.008 grams (approximate)
SOT23
S
D
G
Top View
Equivalent Circuit
Top View
Pin Out
Ordering Information (Note 3)
Product
ZXMN3A14FTA
Marking
314
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000 Units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For more packaging details, go to our website at http://www.twtysemi.com
Marking Information
314
314 = Product Type Marking Code
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Product specification
ZXMN3A14F
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 5)
Symbol
VDSS
Value
30
Units
V
V
±20
VGS
3.9
3.2
3.2
Continuous Drain Current
A
V
GS = 10V
TA = 70°C (Note 5)
(Note 4)
ID
Pulsed Drain Current (Note 6)
18
2.3
18
A
A
A
IDM
IS
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1
8
1.5
12
Unit
W
mW/°C
W
mW/°C
Power Dissipation (Note 4)
Linear Derating Factor
Power Dissipation (Note 5)
Linear Derating Factor
PD
PD
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
125
83
°C/W
°C/W
°C/W
°C
RθJA
RθJA
70.44
RθJL
-55 to +150
TJ, TSTG
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
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Product specification
ZXMN3A14F
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1
ID = 250μA, VGS = 0V
VDS = 30V, VGS = 0V
μA
nA
±100
IGSS
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
2.2
65
V
VGS(th)
⎯
48
ID = 250μA, VDS = VGS
V
V
GS = 10V, ID = 3.2A
GS = 4.5V, ID = 2.6A
Static Drain-Source On-Resistance (Note 8)
mΩ
RDS (ON)
⎯
69
95
Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
7.1
0.85
13
S
V
gfs
VSD
trr
⎯
⎯
⎯
⎯
⎯
0.95
VDS = 15V, ID = 3.2A
TJ = 25°C, IS = 2.5A, VGS = 0V
ns
nC
⎯
⎯
TJ = 25°C, IF = 1.6A,
di/dt = 100A/μs
7
Qrr
448
82
Ciss
Coss
Crss
tD(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
49
2.4
2.5
13.1
5.3
8.6
1.4
1.8
V
DD = 15V, ID = 1A,
RG ≅ 6.0Ω, VGS = 10V
tD(off)
tf
Total Gate Charge (Note 9)
Qg
VDS =15V, VGS = 10V,
ID = 3.2A
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
nC
Qgs
Qgd
Notes:
8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
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