ZXMN3A04DN8TA [ZETEX]
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET; 双30V N沟道增强型MOSFET
| 型号： | ZXMN3A04DN8TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A04DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS=30V; RDS(ON)=0.025⍀ ID=7.6A
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that com bines the benefits of low on-resistance with fast switching
speed. This m akes them ideal for high efficiency, low voltage, power
m anagem ent applications.
S O8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Managem ent Functions
Disconnect switches
Motor control
ORDERING INFORMATION
Top View
DEVICE
REEL S IZE
TAPE WIDTH
QUANTITY
PER REEL
ZXMN3A04DN8TA
ZXMN3A04DN8TC
7”
12m m
12m m
500 u n its
2500 u n its
13”
DEVICE MARKING
•
ZXMN
3A04D
PROVISIONAL ISSUE A - AUGUST 2001
1
ZXMN3A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS S
LIMIT
30
UNIT
V
Dra in -S o u rce Vo lta g e
Ga te S o u rce Vo lta g e
VG S
V
Ϯ 20
Co n tin u o u s Dra in Cu rre n t (VG S =10V; TA=25°C)(b )(d ) ID
(VG S =10V; TA=70°C)(b )(d )
7.6
6.0
5.8
A
(VG S =10V; TA=25°C)(a )(d )
Pu ls e d Dra in Cu rre n t (c)
IDM
25
2.5
25
A
A
A
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e ) (b )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )(c)
IS
IS M
PD
Po w e r Dis s ip a tio n a t TA=25°C (a )(d )
Lin e a r De ra tin g Fa cto r
1.25
10
W
m W/°C
Po w e r Dis s ip a tio n a t TA=25°C (a )(e )
Lin e a r De ra tin g Fa cto r
PD
1.8
14
W
m W/°C
Po w e r Dis s ip a tio n a t TA=25°C (b )(d )
Lin e a r De ra tin g Fa cto r
PD
2.1
17
W
m W/°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
Tj:Ts t g
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
S YMBOL
RθJ A
VALUE
100
70
UNIT
°C/W
°C/W
°C/W
J u n ctio n to Am b ie n t (a )(d )
J u n ctio n to Am b ie n t (a )(e )
J u n ctio n to Am b ie n t (b )(d )
RθJ A
RθJ A
60
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр10 secs.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D=0.05 pulse width=10µs - pulse width lim ited by m axim um
junction tem perature. Refer to Transcient Therm al Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - AUGUST 2001
2
ZXMN3A04DN8
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherw ise stated).
A
PARAMETER
S YMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS .
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V(BR)DS S
IDS S
30
V
ID=250µA, VG S =0V
0.5
VDS =30V, VG S =0V
µA
n A
V
IG S S
100
VG S =±20V, VDS =0V
Ga te -S o u rce Th re s h o ld Vo lta g e
VG S (t h )
1.0
I =250µA, VDS = VG S
D
S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce (1) RDS (o n )
0.02
0.03
V
V
G S =10V, ID=12.6A
G S =4.5V, ID=10.6A
Ω
Ω
Fo rw a rd Tra n s co n d u cta n ce (3)
DYNAMIC (3)
g fs
17.5
S
VDS =15V,ID=6A
In p u t Ca p a cita n ce
Ou tp u t Ca p a cita n ce
Re ve rs e Tra n s fe r Ca p a cita n ce
S WITCHING(2) (3)
Tu rn -On De la y Tim e
Ris e Tim e
Cis s
Co s s
Cr s s
1800
289
p F
p F
p F
V
DS =25V, VG S =0V,
f=1MHz
178
td (o n )
tr
td (o ff)
tf
5.5
8.7
33
n s
n s
n s
n s
n C
VDD =15V, ID=6A
RG =6.0Ω, VG S =10V
Tu rn -Off De la y Tim e
Fa ll Tim e
8.5
19.4
Ga te Ch a rg e
Qg
VDS =15V,VG S =5V,
ID=3.5A
To ta l Ga te Ch a rg e
Qg
35.7
5.5
n C
n C
n C
VDS =15V,VG S =10V,
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
Qg s
Qg d
ID=3.5A
7.0
S OURCE-DRAIN DIODE
Dio d e Fo rw a rd Vo lta g e (1)
VS D
0.95
V
TJ =25°C, IS =6A,
VG S =0V
Re ve rs e Re co ve ry Tim e (3)
Re ve rs e Re co ve ry Ch a rg e (3)
NOTES
tr r
20.5
41.5
n s
TJ =25°C, IF=6A,
d i/d t= 100A/µs
Qr r
n C
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - AUGUST 2001
3
ZXMN3A04DN8
PACKAGE DIMENSIONS
DIM
Millim e tre s
In ch e s
Min
Min
Ma x
4.98
Ma x
A
B
C
D
E
F
4.80
0.189
0.196
1.27 BS C
0.53 REF
0.05 BS C
0.02 REF
0.36
3.81
1.35
0.10
5.80
0°
0.46
0.014
0.15
0.05
0.004
0.23
0°
0.018
3.99
1.75
0.25
6.20
8°
0.157
0.07
0.010
0.24
8°
G
J
K
L
0.41
1.27
0.016
0.050
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
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© Zetex plc 2001
Kwai Fong
USA
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Fax: (49) 89 45 49 49 49
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www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - AUGUST 2001
4
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