ZXMN3A04DN8TC [DIODES]
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET; 双30V N沟道增强型MOSFET
| 型号： | ZXMN3A04DN8TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A04DN8
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that com bines the benefits of low on-resistance with fast switching
speed. This m akes them ideal for high efficiency, low voltage, power
m anagem ent applications.
FEATURES
SO8
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Managem ent Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL TAPE
QUANTITY
PER REEL
PINOUT
WIDTH
12m m
12m m
ZXMN3A04DN8TA
ZXMN3A04DN8TC
7’‘
500 units
13’‘
2500 units
DEVICE MARKING
ZXMN
3A04D
Top view
ISSUE 2 - OCTOBER 2002
1
ZXMN3A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
LIMIT
30
UNIT
V
Dra in -S o u rce Vo lta g e
V
V
DS S
Ga te S o u rce Vo lta g e
V
Ϯ20
GS
Co n tin u o u s Dra in Cu rre n t (V =10V; T =25°C)(b )(d )
GS
I
8.5
6.8
6.5
A
A
D
(V =10V; T =70°C)(b )(d )
GS
A
(V =10V; T =25°C)(a )(d )
GS
A
Pu ls e d Dra in Cu rre n t (c)
I
I
I
39
3.6
39
A
A
A
DM
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e ) (b )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )(c)
S
S M
Po w e r Dis s ip a tio n a t T =25°C (a )(d )
A
P
P
P
1.25
10
W
m W/°C
D
D
D
Lin e a r De ra tin g Fa cto r
Po w e r Dis s ip a tio n a t T =25°C (a )(e )
A
Lin e a r De ra tin g Fa cto r
1.81
14.5
W
m W/°C
Po w e r Dis s ip a tio n a t T =25°C (b )(d )
A
Lin e a r De ra tin g Fa cto r
2.15
17.2
W
m W/°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T :T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
100
69
UNIT
°C/W
°C/W
°C/W
J u n ctio n to Am b ie n t (a )(d )
J u n ctio n to Am b ie n t (b )(e )
J u n ctio n to Am b ie n t (b )(d )
Notes
R
R
R
θJ A
θJ A
θJ A
58
(a) For a dual device surface m ounted on 25m m x 25m m FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface m ounted on FR4 PCB m easured at t Յ10 sec.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D=0.02 pulse width=300µs - pulse width lim ited by m axim um junction tem perature. Refer to Trnsient
Therm al Im pedance Graph.
(d) For a dual device with one active die.
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ZXMN3A04DN8
CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
3
ZXMN3A04DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
S YMBOL
UNIT CONDITIONS .
MIN.
TYP. MAX.
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
V
I
=250µA, V =0V
(BR)DS S
D
GS
30
I
V
=30V, V =0V
µA
n A
V
DS S
DS
GS
0.5
I
V
=±20V, V =0V
GS S
GS
DS
100
Ga te -S o u rce Th re s h o ld Vo lta g e
V
I
=250µA, V = V
DS GS
GS (th )
1.0
D
S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce
(1)
R
V
V
=10V, I =12.6A
D
=4.5V, I =10.6A
D
Ω
Ω
DS (o n )
GS
GS
0.02
0.03
Fo rw a rd Tra n s co n d u cta n ce (3)
g
S
V
=15V,I =12.6A
D
fs
DS
22.1
DYNAMIC (3)
In p u t Ca p a cita n ce
C
C
C
p F
p F
p F
is s
1890
349
V
=15V, V =0V,
GS
DS
Ou tp u t Ca p a cita n ce
Re ve rs e Tra n s fe r Ca p a cita n ce
o s s
rs s
f=1MHz
218
S WITCHING(2) (3)
Tu rn -On De la y Tim e
Ris e Tim e
t
t
t
t
n s
n s
n s
n s
n C
d (o n )
5.2
6.1
r
V
R
=15V, I =1A
D
DD
G
=6.0Ω, V =10V
Tu rn -Off De la y Tim e
Fa ll Tim e
GS
d (o ff)
f
38.1
20.2
19.9
Ga te Ch a rg e
Q
V
=15V,V =5V,
GS
g
DS
ID=6.5A
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
Q
Q
Q
n C
n C
n C
g
36.8
5.8
V
=15V,V =10V,
GS
DS
ID=6.5A
g s
g d
7.1
S OURCE-DRAIN DIODE
Dio d e Fo rw a rd Vo lta g e (1)
V
V
T =25°C, I =6.8A,
J S
GS
S D
0.85
0.95
V
=0V
Re ve rs e Re co ve ry Tim e (3)
Re ve rs e Re co ve ry Ch a rg e (3)
NOTES
t
n s
T =25°C, I =2.3A,
d i/d t= 100A/µs
rr
J
F
18.4
11
Q
n C
rr
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - OCTOBER 2002
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ZXMN3A04DN8
TYPICAL CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
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ZXMN3A04DN8
TYPICAL CHARACTERISTICS
ISSUE 2 - OCTOBER 2002
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ZXMN3A04DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MIN
MILLIMETRES
DIM
MAX
0.069
0.010
0.197
0.244
0.157
0.050
MIN
1.35
0.10
4.80
5.80
3.80
0.40
MAX
1.75
0.25
5.00
6.20
4.00
1.27
A
A1
D
H
E
0.053
0.004
0.189
0.228
0.150
0.016
L
e
0.050 BSC
1.27 BSC
b
0.013
0.008
0Њ
0.020
0.010
8Њ
0.33
0.19
0Њ
0.51
0.25
8Њ
c
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
⍜
h
0.010
0.020
0.25
0.50
© Zetex plc 2002
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ISSUE 2 - OCTOBER 2002
7
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