ZVN4310G [ZETEX]
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; N沟道增强型垂直DMOS FET
| 型号： | ZVN4310G |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4310G
ISSUE 3 - FEBRUARY 1996
FEATURES
*
Very low RDS(ON) = .54Ω
D
APPLICATIONS
*
*
DC - DC Converters
Solenoids/Relay Drivers for Autom otive
S
PARTMARKING DETAIL -
ZVN4310
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
Drain-Source Voltage
100
V
A
Continuous Drain Current at Tam b=25°C
Pulsed Drain Current
ID
1.67
IDM
12
± 20
A
Gate Source Voltage
VGS
V
Power Dissipation at Tam b=25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
3
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
100
V
ID=1m A, VGS=0V
ID=1m A, VDS= VGS
Gate-Source Threshold VGS(th)
Voltage
1
3
V
Gate-Body Leakage
IGSS
IDSS
20
nA
V
GS=± 20V, VDS=0V
VDS=100V, VGS=0V
DS=80V, VGS=0V, T=125°C(2)
Zero Gate Voltage
Drain Current
10
100
µA
µA
V
On-State Drain
Current(1)
ID(on)
RDS(on)
gfs
9
A
VDS=25V, VGS=10V
Static Drain-Source
On-State Resistance (1)
0.4
0.5
0.54
0.75
VGS=10V, ID=3.3A
VGS=5V, ID=1.5A
Ω
Ω
Forward
0.6
S
VDS=25V,ID=3.3A
Transconductance (1)
Input Capacitance (2)
Ciss
350
140
pF
pF
Comm on Source
Coss
VDS=25 V, VGS=0V, f=1MHz
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Crss
20
8
pF
ns
Turn-On Delay Tim e
(2)(3)
td(on)
V
DD≈25V, VGEN=10V, ID=3A
Rise Tim e (2)(3)
tr
25
30
ns
ns
RGS =50Ω
Turn-Off Delay Tim e
(2)(3)
td(off)
Fall Tim e (2)(3)
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
3 - 413
ZVN4310G
TYPICAL CHARACTERISTICS
V
GS=
4V
10V
5V 6V 8V
VGS=3V
10V
20V
12V 9V 8V
10
7V
10
9
8
6V
5V
7
6
1.0
5
4
3
2
1
0
4V
3V
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
100
1
10
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Am ps)
Saturation Characteristics
On-resistance v drain current
2.6
2.4
2.2
2.0
1.8
5
G
S
(
t
h
)
4
3
VDS=10V
V
GS=10V
R
e
c
I
D=3.3A
n
ta
s
i
s
e
n
)
o
1.6
1.4
1.2
1.0
0.8
0.6
e
R
c
D S
(
our
2
1
S
n-
i
a
V
GS=
VDS
Dr
ID=1mA
0
-50
100
150
125 175 200 225
-25
0
25 50 75
2
6
8
10 12
16 18 20
0
4
14
ID(on)- Drain Current (Amps)
T
j
-Junction Temperature (°C)
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
VDD=
16
14
10V
20V
50V
500
400
300
ID=3A
100V
12
10
8
6
200
100
0
C
iss
4
2
0
C
C
50
oss
rss
0
20
30
40
10
0
1
2
3
4
5
6
7
8
9
10 11 12
V
DS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 414
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