ZVN4310GTA [DIODES]
Power Field-Effect Transistor, 1.67A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN;
| 型号： | ZVN4310GTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 1.67A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN 晶体 小信号场效应晶体管 |
| 文件： | 总3页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4310A
ISSUE 2 – MARCH 94
FEATURES
*
*
*
100 Volt VDS
RDS(on) = 0.5Ω
Spice m odel available
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
VDS
ID
100
0.9
1
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pra ctica l Co n tin u o u s Dra in Cu rre n t a t
A
IDP
A
T
a m b=25°C
Pu ls e d Dra in Cu rre n t
IDM
12
± 20
A
V
Ga te S o u rce Vo lta g e
VGS
Po w e r Dis s ip a tio n a t Ta m b=25°C
Pra ctica l Po w e r Dis s ip a tio n at Ta m b=25°C*
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
850
m W
W
Pto tp
Tj:Ts tg
1.13
-55 to +150
°C
*The power which can be dissipated assum ing the device is m ounted in a typical m anner on a P.C.B.
with copper equal to 1 inch square m inim um
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. TYP.
MAX. UNIT CONDITIONS .
Dra in -S o u rce
BVDS S
100
V
ID=1m A, VGS=0V
Bre akd o w n Vo ltag e
Ga te-S o u rce
VGS (th )
1
3
V
ID=1m A, VDS= VGS
Th res h o ld Vo ltag e
Ga te-Bo d y Lea ka g e
IGS S
IDS S
20
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e
Dra in Cu rre n t
10
100
VDS=100V, VGS=0
DS=80V, VGS=0V, T=125°C(2)
µA
µA
V
On -S ta te Dra in
Cu rre n t(1)
ID(o n )
9
A
VDS=25 V, VGS=10V
S ta tic Drain -S o u rce
On -S ta te Res is ta n ce
(1)
RDS (o n )
0.36
0.48
0.5
0.65
VGS=10V,ID=3A
VGS=5V, ID=1.5A
Ω
Ω
Fo rw a rd
g fs
600
m S
VDS=25V,ID=3A
Tra n s co n d u cta n ce
(1)(2)
3-393
ZVN4310A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN.
TYP.
MAX. UNIT CONDITIONS .
In p u t Cap a citan ce (2) Cis s
350
140
p F
p F
Co m m o n S o u rce
Ou tp u t Ca p a citan ce
(2)
Co s s
VDS=25 V, VGS=0V, f=1MHz
Re vers e Tra n s fer
Ca p a cita n ce (2)
Crs s
30
8
p F
n s
Tu rn -On Delay Tim e
(2)(3)
td (o n )
V
R
DD ≈25V, VGEN=10V, ID=3A
GS=50Ω
Ris e Tim e (2)(3)
tr
25
30
n s
n s
Tu rn -Off De la y Tim e
(2)(3)
td (o ff)
Fa ll Tim e (2)(3)
tf
16
n s
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Th erm a l Re s is tan ce:J u n ctio n to Am b ie n t
J u n ctio n to Cas e
Rth(j-am b)
Rth(j-case)
150
50
°C/W
°C/W
1.0
D.C.
150
t1
D=t1/tP
0.75
Am
bie
100
50
0
tP
D=0.6
nt t
0.50
e
mpe
r
at
D=0.2
D=0.1
0.25
u
r
e
D=0.05
Single Pulse
-40 -20
0
20
0.0001 0.001
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-394
ZVN4310A
TYPICAL CHARACTERISTICS
VGS=
4V
10V
5V 6V 8V
VGS=3V
10V
20V
12V 9V 8V
10
7V
10
9
8
6V
5V
7
6
1.0
5
4
3
2
1
0
4V
3V
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
100
1
10
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Am ps)
Saturation Characteristics
On-resistance v drain current
2.6
2.4
2.2
2.0
1.8
5
4
3
VDS=10V
VGS=10V
ID=3.3A
1.6
1.4
1.2
1.0
0.8
0.6
2
1
VGS=VDS
ID=1mA
G
ate
T
h
res
h
o
l
d
V
o
l
t
a
g
e
V
0
-50
150
175 200 225
100
-25
0
25 50 75
125
2
6
8
10 12
16 18 20
0
4
14
ID(on)- Drain Current (Amps)
Tj-Junction Temperature (°C)
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
VDD=
16
10V
20V
50V
500
400
300
14
ID=3A
100V
12
10
8
6
200
100
0
Ciss
4
2
0
Coss
Crss
50
0
20
30
40
10
0
1
2
3
4
5
6
7
8
9
10 11 12
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-395
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