ZVN4310G_12 [DIODES]
100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223; 100V N沟道增强型垂直MOSFET采用SOT223
| 型号： | ZVN4310G_12 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 |
| 文件： | 总5页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
Green
ZVN4310G
100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223
Features and Benefits
Mechanical Data
•
•
Case: SOT223
•
•
•
•
V(BR)DSS > 100V
DS(on) ≤ 0.54Ω @ VGS = 10V
Maximum continuous drain current ID = 1.67A
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
R
•
•
•
“Green” component, Lead Free Finish / RoHS compliant
(Note 1)
Weight: 0.112 grams (approximate
•
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
DC-DC Converters
Solenoids / Relay Driver for Automotive
SOT223
D
G
S
Top View
Equivalent Circuit
Pin Out - Top
Ordering Information (Note 1)
Part Number
ZVN4310GTA
Marking
ZVN4310
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
1,000
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS
exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website at https:// www.diodes.com
Marking Information
ZVN4310 = Product Type Marking Code
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January 2012
© Diodes Incorporated
ZVN4310G
Document number: DS33372 Rev. 4 - 2
A Product Line of
Diodes Incorporated
ZVN4310G
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
100
±20
1.67
12
Unit
V
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current (Note 3)
A
A
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
3
Unit
W
Power Dissipation
(Note 2)
(Note 2)
(Note 4)
PD
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
41.7
°C/W
°C/W
°C
8.84
RθJL
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = 1mA
100
-
-
-
-
V
BVDSS
IDSS
V
V
DS = 100V, VGS = 0V
DS = 80V, VGS = 0V, TA = 125°C
10
100
µA
µA
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
-
-
-
±20
-
nA
A
IGSS
VGS = ±20V, VDS = 0V
VGS = 10V, VDS = 10V
On-State Drain Current
9
ID(on)
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
1
-
-
3
V
Ω
S
VGS(th)
RDS (on)
gfs
VDS = VGS, ID = 1mA
V
GS = 10V, ID = 3.3A
0.4
0.5
0.54
0.75
Static Drain-Source On-Resistance
VGS = 5V, ID = 1.5A
VDS = 10V, ID = 3.3A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
350
140
20
8
pF
pF
pF
ns
ns
ns
ns
Ciss
Coss
Crss
tD(on)
tr
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
25
30
16
Turn-On Rise Time
VDD = 25V, ID = 3A, VGEN = 10V,
RGS = 50Ω
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
2. For a device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.
3. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
4. Thermal resistance from junction to solder-point (at the end of the drain lead).
5. Short duration pulse test used to minimize self-heating effect.
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January 2012
© Diodes Incorporated
ZVN4310G
Document number: DS33372 Rev. 4 - 2
A Product Line of
Diodes Incorporated
ZVN4310G
Electrical Characteristics
3 of 5
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January 2012
© Diodes Incorporated
ZVN4310G
Document number: DS33372 Rev. 4 - 2
A Product Line of
Diodes Incorporated
ZVN4310G
Package Outline Dimensions
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
—
—
—
—
4.60
2.30
0.85 1.05 0.95
0.84 0.94 0.89
Q
All Dimensions in mm
A
A1
Suggested Pad Layout
X1
Y1
Dimensions Value (in mm)
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
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January 2012
© Diodes Incorporated
ZVN4310G
Document number: DS33372 Rev. 4 - 2
A Product Line of
Diodes Incorporated
ZVN4310G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and
any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or
systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
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January 2012
© Diodes Incorporated
ZVN4310G
Document number: DS33372 Rev. 4 - 2
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