ZVN4310GTC [DIODES]
1.67A, 100V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN;
| 型号： | ZVN4310GTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.67A, 100V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN |
| 文件： | 总5页 (文件大小：602K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
ZVN4310G
100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223
Features and Benefits
Mechanical Data
V(BR)DSS > 100V
Case: SOT223
RDS(ON) ≤ 0.54Ω @ VGS = 10V
Case Material: Molded Plastic, “Green” Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Maximum Continuous Drain Current ID = 1.67A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.112 grams (Approximate)
Applications
DC-DC Converters
Solenoids / Relay Driver for Automotive
SOT223
D
G
S
Top View
Equivalent Circuit
Pin Out - Top
Ordering Information (Note 4)
Part Number
ZVN4310GTA
Marking
ZVN4310
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZVN4310 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZVN
4310
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© Diodes Incorporated
ZVN4310G
Document number: DS33372 Rev. 6 - 2
ZVN4310G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
100
±20
1.67
12
Unit
V
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current (Note 6)
A
A
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
3
Unit
W
Power Dissipation
(Note 5)
(Note 5)
(Note 7)
PD
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
41.7
°C/W
°C/W
°C
8.84
RθJL
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
100
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
10
100
µA VDS = 100V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +25°C
µA
nA
A
VDS = 80V, VGS = 0V, TA = +125°C
VGS = ±20V, VDS = 0V
Gate-Source Leakage
-
-
-
±20
-
IGSS
On-State Drain Current
9
ID(ON)
VGS = 10V, VDS = 10V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
-
-
3
V
Ω
S
VGS(TH)
RDS(ON)
gfs
VDS = VGS, ID = 1mA
VGS = 10V, ID = 3.3A
VGS = 5V, ID = 1.5A
VDS = 10V, ID = 3.3A
0.4
0.5
0.54
0.75
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
350
140
20
8
pF
pF
pF
ns
ns
ns
ns
Ciss
Coss
Crss
tD(ON)
tR
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
25
30
16
Turn-On Rise Time
VDD = 25V, ID = 3A, VGEN = 10V,
RGS = 50Ω
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. For a device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
8. Short duration pulse test used to minimize self-heating effect.
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ZVN4310G
Document number: DS33372 Rev. 6 - 2
ZVN4310G
Electrical Characteristics
ID, Drain Current (A)
VDS, Drain Source Voltage (V)
Figure 2. On-resistance vs. Drain Current
Figure 1. Saturation Characteristics
ID(ON), Drain Current (A)
TJ, Junction Temperature (°C)
Figure 3. Normalised RDS(ON) and VGS(TH) vs. Temperature
Figure 4. Transconductance vs. Drain Current
VDS, Drain Source Voltage (V)
Q, Charge (nC)
Figure 5. Capacitance vs. Drain-source Voltage
Figure 6. Gate Charge vs. Gate-source Voltage
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Document number: DS33372 Rev. 6 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
E
E1
A1 0.010 0.15 0.05
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
e1
b
-
-
-
-
4.60
2.30
e
0.85 1.05 0.95
0.84 0.94 0.89
Q
A
A1
7°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions Value (in mm)
C
C1
X
X1
Y
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y1
Y2
Y
C
X
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Document number: DS33372 Rev. 6 - 2
ZVN4310G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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