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FZT493TC [ZETEX]

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,;
FZT493TC
型号： FZT493TC
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

开关 光电二极管 晶体管
文件： 总1页 (文件大小：41K)
中文：  中文翻译
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SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FZT493  
ISSUE 3 – NOVEMBER 1995  
✪
C
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT593  
FZT493  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
Collector-Emitter Voltage  
100  
V
Emitter-Base Voltage  
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Base Current  
IC  
1
A
IB  
200  
2
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
Tj:Tstg  
-55 to +150  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
100  
5
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=100V  
VEB=4V  
V
V
Cut-Off Currents  
100  
100  
100  
nA  
nA  
nA  
IEBO  
ICES  
VCES=100V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.6  
V
V
IC=500mA, IB =50mA*  
IC=1A, IB =100mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.15  
V
IC=1A, IB=100mA*  
Base-Emitter Turn-On  
Voltage  
1.0  
V
IC =1A, VCE =10V*  
Static Forward Current  
100  
100  
80  
IC=1mA, VCE =10V  
300  
10  
IC =250mA, VCE =10V*  
IC =500mA, VCE =10V*  
IC = 1A, VCE =10V*  
30  
Transition Frequency  
Output Capacitance  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V,  
f =100MHz  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
For typical Characteristics graphs see FMMT493 datasheet  
3 - 190  

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