FZT560 [DIODES]
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR; SOT223 PNP硅平面高压晶体管
| 型号： | FZT560 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT560
ISSUE 1– NOVEMBER 1998
FEATURES
C
*
*
*
500 Volt VCEO
150mA continuous current
Ptot = 2 Watt
E
C
B
PARTMARKING DETAIL –
FZT560
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-500
Collector-Emitter Voltage
Emitter-Base Voltage
-500
V
-5
-500
V
Peak Pulse Current
mA
mA
W
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-150
Ptot
2
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -500
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -500
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-100
-100
-100
nA
nA
nA
VCB=-500V
ICES
VCE=-500V
IEBO
VEB=-5V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.20
-0.5
V
V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-10mA*
Base-Emitter Saturation
Voltage
VBE(sat)
-0.9
V
IC=-50mA, IB=-10mA*
Base-Emitter Turn On Voltage
VBE(on)
hFE
-0.9
V
IC=-50mA, VCE=-10V*
Static Forward Current
Transfer Ratio
100
300
300
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
80
15 typ
Transition Frequency
fT
60
MHz
pF
IC=-10mA, VCE=-20V
f=50MHz
Output Capacitance
Switching times
Cobo
8
VCB=-20, f=1MHz
ton
toff
110 typ.
1.5 typ
ns
µs
VCE=-100, IC=-50mA,
I
B1=-5mA,IB2=10mA,
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
FZT560
TYPICAL CHARACTERISTICS
0.8
+25°C
1.6
IC/IB=10
0.6
1.2
-55°C
+25°C
+100°C
+150°C
IC/IB=10
IC/IB=20
IC/IB=50
0.4
0.8
0.4
0
0.2
0
1m
10m
100m
1m
1m
1
10m
100m
100m
1000
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
1.0
0.8
0.6
0.4
0.2
0
IC/IB=10
VCE=5V
240
160
80
+100°C
+25°C
-55°C
+25°C
+100°C
+150°C
-55°C
0
10m
1m
10m
100m
1
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.0
0.75
0.5
1
0.1
DC
1s
-55°C
0.01
0.001
+25°C
+100°C
+150°C
100ms
10ms
1ms
0.25
0
100us
10
100
1m
10m
100m
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
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