FZT558TC [DIODES]
0.2A, 400V, PNP, Si, POWER TRANSISTOR;
| 型号： | FZT558TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 0.2A, 400V, PNP, Si, POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
Green
FZT558
400V PNP HIGH VOLTAGE TRANSISTOR IN SOT223
Features
Mechanical Data
BVCEO > -400V
Case: SOT223
IC = -200mA High Continuous Current
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Excellent hFE Characteristics up to -100mA
Low Saturation Voltage VCE(sat) < -200mV @ -20mA
Complementary NPN Type: FZT458
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
C
SOT223
B
E
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Note 4)
Product
FZT558TA
Compliance
AEC-Q101
Marking
FZT558
Reel size (inches)
Tape width (mm)
Quantity per reel
7
12
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT 558 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
FZT
558
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
A Product Line of
Diodes Incorporated
FZT558
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-400
-400
-7
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
-200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
2
3
62.5
41.7
19.41
-55 to +150
Unit
W
W
°C/W
C/W
°C/W
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
RθJL
C
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
JEDEC Class
3A
C
V
Notes:
5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 50mm x 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
A Product Line of
Diodes Incorporated
FZT558
Thermal Characteristics and Derating Information
70
50
40
30
20
10
0
Tamb=25°C
Tamb=25°C
60
25mm x 25mm
50mm x 50mm
2oz FR4
2oz FR4
50
40
D=0.5
D=0.5
30
Single Pulse
Single Pulse
20
10
0
D=0.2
D=0.2
D=0.05
D=0.05
D=0.1
D=0.1
10
100µ 1m 10m 100m
1
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
3.0
Single Pulse
Tamb=25°C
50mm x 50mm
2oz FR4
100
2.5
2.0
1.5
1.0
0.5
0.0
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ 1m 10m 100m
1
10
100
1k
0
20 40 60 80 100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
A Product Line of
Diodes Incorporated
FZT558
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
-400
-400
-7
Typ
Max
Unit
V
Test Condition
IC = -100µA
IC = -1mA
V
V
IE = -100µA
VCB = -320V
VCES = -320V
VEB = -5V
-100
-100
-100
nA
nA
nA
Collector Cut-Off Current
ICES
Emitter Cut-Off Current
IEBO
-0.2
-0.5
IC = -20mA, IB = -2mA
IC = -50mA, IB = -6mA
IC = -50mA, IB = -5mA
IC = -50mA, VCE = -10V
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
Collector-Emitter Saturation Voltage (Note 9)
V
VCE(sat)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
-0.9
-0.9
V
V
VBE(sat)
VBE(on)
100
100
15
300
DC Current Transfer Static Ratio (Note 9)
-
hFE
VCE = -20V, IC = -10mA
f = 20MHz
Transitional Frequency (Note 9)
Output Capacitance (Note 9)
Switching Times
50
MHz
pF
5
-
fT
95
Cobo
ton
VCB = -20V. f = 1MHz
IC = -50mA, VC = -100V
IB1 = 5mA, IB2 = -10mA
ns
1,600
toff
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
A Product Line of
Diodes Incorporated
FZT558
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
A Product Line of
Diodes Incorporated
FZT558
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT223
D
Q
b1
C
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
E
E1
A1 0.010 0.15 0.05
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
e1
b
—
—
—
—
4.60
2.30
e
0.85 1.05 0.95
0.84 0.94 0.89
A
A1
7°
Q
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
X1
Y1
Dimensions Value (in mm)
C
C1
X
X1
Y
Y1
Y2
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y
C
X
Note:
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
A Product Line of
Diodes Incorporated
FZT558
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
FZT558
Document number: DS33139 Rev.4 - 2
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