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FZT549 [DIODES]

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; SOT223 PNP硅平面中功率晶体管
FZT549
型号： FZT549
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
SOT223 PNP硅平面中功率晶体管

晶体 晶体管 功率双极晶体管 光电二极管 局域网
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SOT223 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FZT549  
ISSUE 2 – MARCH 1995  
✪
PARTMARKING DETAIL –  
FZT549  
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-35  
Collector-Emitter Voltage  
-30  
V
Emitter-Base Voltage  
-5  
V
Peak Pulse Current  
-2  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
-1  
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-35  
-30  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-0.1  
-10  
VCB=-30V  
µA  
µA  
VCB=-30V, Tamb=100°C  
Emitter Cut-Off Current  
IEBO  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.50  
-0.75  
V
V
IC=-1A, IB =-100mA*  
IC=-2A, IB -200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-1.25  
V
IC=-1A, IB=-100mA*  
Base-Emitter Turn-On  
Voltage  
-1.0  
V
IC =-1A, VCE =-2V*  
Static Forward Current  
70  
100  
80  
IC=-50mA, VCE =-2V  
IC =-500mA, VCE =-2V*  
IC =-1A, VCE =-2V*  
IC =-2A, VCE =-2V*  
300  
10  
30  
Transition Frequency  
Output Capacitance  
fT  
100  
MHz  
pF  
IC=-100mA, VCE=-5V,  
f =100MHz  
Cobo  
VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
For typical characteristics graphs see FMMT549 datasheet.  
3 - 191  

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