FCX617 [ZETEX]
NPN SILICON POWER (SWITCHING) TRANSISTOR; NPN硅功率（开关）晶体管
| 型号： | FCX617 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON POWER
FCX617
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
*
*
*
*
2W POWER DISSIPATION
12A Peak Pulse Current
Excellent HFE Characteristics up to 12 Amps
Extremely Low Saturation Voltage E.g. 8mv Typ.
Extremely Low Equivalent On-resistance;
RCE(sat) 50mΩ at 3A
C
E
C
B
Partmarking Detail -
617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
15
15
5
V
V
Peak Pulse Current **
12
3
A
Continuous Collector Current
Base Current
IC
A
IB
500
mA
Power Dissipation at Tamb=25°C
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
†
‡
recommended Ptot calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX617
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
15
15
5
V
IC=100µA
IC=10mA*
IE=100µA
VCB=10V
VEB=4V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
0.3
0.3
0.3
100
100
100
nA
nA
nA
Emitter Cut-Off
Current
IEBO
Collector Emitter
Cut-Off Current
ICES
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
230
300
400
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=4A, IB=50mA*
IC=5A, IB=50mA*
Base-Emitter
VBE(sat)
0.89
0.82
1.0
V
IC=3A, IB=50mA*
Saturation Voltage
Base-Emitter Turn-On VBE(on)
Voltage
1.0
V
I =3A, VCE=2V*
C
Static Forward
Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
Transition
Frequency
fT
80
120
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Turn-On Time
Cobo
t(on)
t(off)
30
40
pF
ns
ns
VCB=10V, f=1MHz
VCC=10V, IC=3A
120
160
IB1=IB2=50mA
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FCX617
TYPICAL CHARACTERISTICS
1
100m
10m
1m
0.4
+25 °C
IC/IB=60
0.3
0.2
100°C
25°C
IC/IB=100
IC/IB=60
IC/IB=10
-55°C
0.1
0.0
1mA
1m
10m
100m
1
10
10mA
100mA
1A
10A
10A
Collector Current
IC - Collector Current (A)
VCE(SAT) vs IC
VCE(SAT) v IC
100°C
25°C
VCE=2V
1.4
IC/IB=60
1.2
1.0
0.8
0.6
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
450
225
0
-55°C
25°C
-55°C
100°C
0.2
0.0
1A
10A
100mA
100A
1mA
10mA
1mA
10mA
1A
10A
100mA
100A
Collector Current
Collector Current
hFE vs IC
VBE(SAT) vs IC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
VCE=2V
10
1
-55°C
25°C
100°C
DC
1s
100ms
10ms
1ms
100us
0.1
100m
1mA
10mA
100mA
1A
10A
100A
1
10
100
Collector Current
VCE (VOLTS)
VBE(ON) vs IC
Safe Operating Area
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