FCX619 [ZETEX]
NPN SILICON POWER (SWITCHING) TRANSISTOR; NPN硅功率（开关）晶体管
| 型号： | FCX619 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：862K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 5 - SEPTEMBER 1999
FEATURES
FCX619
* 2W POWER DISSIPATION
C
*
*
*
*
6A PEAK PULSE CURRENT
EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps
EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
RCE(sat) 87m at 2.75A
E
*
C
B
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
FCX720
619
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Peak Pulse Current
6
A
Continuous Collector Current
Base Current
IC
2.75
500
A
IB
mA
W
Power Dissipation at Tamb=25°C
Ptot
1†
2‡
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
†
‡
recommended Ptot calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX619
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
50
50
5
190
V
IC=100 A
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
65
V
V
IC=10mA*
IE=100 A
VCB=40V
Emitter-Base
Breakdown Voltage
8.3
Collector Cut-Off
Current
100
nA
Emitter Cut-Off Current IEBO
100
100
nA
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
VCES=40V
Collector-Emitter
Saturation Voltage
VCE(SAT)
13
25
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=50mA*
IC=2.75A,IB=100mA*
150
190
240
220
260
320
Base-Emitter
VBE(SAT)
VBE(ON)
0.97
1.1
V
IC=2.75A,
Saturation Voltage
IB=100mA*
Base-Emitter Turn-On
Voltage
0.89
1.0
V
IC=2.75A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
200
300
200
100
400
450
400
200
30
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition
Frequency
fT
100
165
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Turn-On Time
COBO
t(ON)
t(OFF)
12
20
pF
ns
ns
VCB=10V, f=1MHz
VCC=10V, IC=1A
170
750
I
B1=-IB2=10mA
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
FCX619
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