FCX619_03 [ZETEX]
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR; SOT89 NPN硅功率（开关）晶体管
| 型号： | FCX619_03 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 文件： | 总3页 (文件大小：1653K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
FCX619
ISSUE 6 - J ANUARY 2003
FEATURES
*
*
*
*
*
2 W P OWER DIS S IP ATION
6A PEAK PULSE CURRENT
C
EXCELLENT hFE CHARACTERISTICS UP TO 6 Am ps
EXTREMELY LOW SATURATION VOLTAGE e.g. 13m V typ.
EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
E
*
RCE(sat) 87m Ω at 2.75A
C
B
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
FCX720
619
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
50
50
5
V
V
Pe a k Pu ls e Cu rre n t
6
A
Co n tin u o u s Co lle cto r Cu rre n t †
Ba s e Cu rre n t
IC
3.0
500
A
IB
m A
W
Po w e r Dis s ip a tio n a t Ta m b=25°C
Pto t
1.5†
2‡
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
Tj:Ts tg
-55 to +150
°C
†
‡
recom m ended Ptot calculated using FR4 m easuring 25x25x0.6m m
Maxim um power dissipation is calculated assum ing that the device is m ounted on FR4
substrate m easuring 40x40x0.6m m and using com parable m easurem ent m ethods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice param eter data is available upon request for these devices
Refer to the handling instructions for soldering surface m ount com ponents.
FCX619
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS .
Co lle cto r-Ba s e
Bre a kd o w n Vo lta g e
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
50
50
5
190
V
IC=100µA
Co lle cto r-Em itte r
Bre a kd o w n Vo lta g e
65
V
V
IC=10m A*
IE=100µA
VCB=40V
Em itte r-Ba s e
Bre a kd o w n Vo lta g e
8.3
Co lle cto r Cu t-Off
Cu rre n t
100
n A
Em itte r Cu t-Off Cu rre n t IEBO
100
100
n A
n A
VEB=4V
Co lle cto r Em itte r
Cu t-Off Cu rre n t
ICES
VCES =40V
Co lle cto r-Em itte r
S a tu ra tio n Vo lta g e
VCE(S AT)
13
25
m V
m V
m V
m V
IC=0.1A, IB=10m A*
IC=1A, IB=10m A*
IC=2A, IB=50m A*
IC=2.75A,IB=100m A*
150
190
240
220
260
320
Ba s e -Em itte r
S a tu ra tio n Vo lta g e
VBE(S AT)
VBE(ON)
0.97
1.1
V
IC=2.75A,
IB=100m A*
Ba s e -Em itte r Tu rn -On
Vo lta g e
0.89
1.0
V
IC=2.75A, VCE=2V*
S ta tic Fo rw a rd Cu rre n t h FE
Tra n s fe r Ra tio
200
300
200
100
400
450
400
200
30
IC=10m A, VCE=2V*
IC=200m A, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Tra n s itio n
Fre q u e n cy
fT
100
165
MHz
IC=50m A, VCE=10V
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
COBO
t(ON)
t(OFF)
12
20
p F
n s
n s
VCB=10V, f=1MHz
VCC=10V, IC=1A
170
750
IB1=-IB2=10m A
Tu rn -Off Tim e
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice param eter data is available upon request for this device
FCX619
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