FCX619 [TYSEMI]

2W power dissipation, Excellent HFE characteristics up to 6 amps; 2W的功率耗散,优秀的HFE特性电流达到6安
FCX619
型号: FCX619
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

2W power dissipation, Excellent HFE characteristics up to 6 amps
2W的功率耗散,优秀的HFE特性电流达到6安

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中文:  中文翻译
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T
Tr  
                                            
ra  
                                             
an  
                                              
ns  
                                               
si  
                                                
is  
                                                
st  
                                                 
tIo  
                                                  
oCr  
                                                   
rs  
                                                   
s
Product specification  
FCX619  
Features  
2W power dissipation.  
6A peak pulse current.  
Excellent HFE characteristics up to 6 amps.  
Extremely low saturation voltage E.g. 13mv Typ.  
Extremely low equivalent on-resistance.  
RCE(sat) 87mÙ at 2.75A.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
50  
50  
5
Collector-emitter voltage  
Emitter-base voltage  
V
V
Continuous collector current  
6
A
Peak pulse current  
IC  
3.0  
A
mA  
W
Base current  
IB  
500  
1.5  
Power dissipation  
Ptot  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
T
Tr  
                                            
ra  
                                             
an  
                                              
ns  
                                               
si  
                                                
is  
                                                
st  
                                                 
tIo  
                                                  
oCr  
                                                   
rs  
                                                   
s
Product specification  
FCX619  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Testconditons  
Min  
50  
50  
5
Typ  
190  
65  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100ìA  
IC=10mA  
IE=100ìA  
VCB=40V  
VCE=40V  
VEB=4V  
V
8.3  
V
100  
100  
100  
nA  
nA  
nA  
Collector Emitter Cut-Off Current  
Emitter cut-off current  
ICES  
IEBO  
13  
25  
IC=0.1A, IB=10mA  
IC=1A, IB=10mA  
IC=2A, IB=50mA  
IC=2.75A, IB=100mA  
150  
190  
240  
220  
260  
320  
Collector-emitter saturation voltage *  
VCE(sat)  
mV  
Base-emitter saturation voltage *  
Base-emitter ON voltage *  
VBE(sat)  
VBE(on)  
0.97  
0.89  
1.1  
1.0  
V
V
IC=2.75A, IB=100mA  
IC=2.75A, VCE=2V  
200  
300  
200  
100  
-----  
400  
450  
400  
200  
30  
IC=10mA, VCE=2V  
IC=200mA,VCE=2V  
IC=1A,VCE=2V  
DC current gain *  
hFE  
IC=2A,VCE=2V  
IC=6A,VCE=2V  
Transitional frequency  
Output capacitance  
Turn-on time  
fT  
100  
165  
12  
MHz  
pF  
IC=50mA, VCE=10V, f=100MHz  
VCB=10V, f=1MHz  
IC=1A, VCC=10V  
Cobo  
t(on)  
t(off)  
20  
170  
750  
ns  
Turn-off time  
ns  
IB1=IB2=10mA  
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
619  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

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