WCF10C60 [WINSEMI]
Silicon Controlled Rectifiers; 可控硅整流器器
| 型号： | WCF10C60 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WCF10C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT(RMS)=10A)
Low On-State Voltage(1.4V(Typ.)@ITM
Isolation Voltage(VISO=1500V AC)
)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Condition
Value
600
Units
V
A
A
IT(AV)
Half Sine Wave:TC =86 °C
180°conduction Angle
1/2 Cycle,60Hz,Sine
Wave Non-Repetitive
t=8.3ms
6.4
IT(RMS)
10
ITSM
Surge on-state Current
110
A
I2t
I2t for Fusing
60
50
5
A2s
A/㎲
W
di/dt
PGM
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
PG(AV)
Forward Average Gate Power Dissipation
0.5
W
IFGM
VRGM
VISO
TJ
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M..S)
Operating Junction Temperature
Storage Temperature
2
A
V
5.0
A,C.1minute
1500
V
-40~125
-40~150
°C
°C
TSTG
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
Max
3.8
RθJc
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
-
-
℃/W
℃/W
-
-
60
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WCF10C60
Electrical Characteristics (TC=25℃ ,unless otherwise noted)
Value
Units
Symbol
Parameter
Test Conditions
Min Typ Max
-
-
10
μA
μA
Repetitive Peak Off-State
Current
VAK=VDRM
TC=25℃
IDRM
TC=125℃
-
-
200
VTM
Peak On-State Voltage (1)
Gate Trigger Current (2)
ITM=20A, tp=380㎲
-
-
1.4
-
1.6
15
V
VAK=6V(DC),RL=10Ω
IGT
mA
TC=25℃
TC=25℃
VD=6V(DC),RL=10Ω
VGT
VGD
Gate Trigger Voltage (2)
-
-
1.5
V
V
Non-Trigger Gate Voltage (1)
VAK=12V,RL=100Ω TC=125℃
Linear slope up to VD=67%
VDRM, gate open
0.2
Critical Rate of Rise Off-State
Voltage
dv/dt
IH
200
-
-
-
-
V/㎲
TJ=125℃
IT=100mA, Gate Open
TC=25℃
Holding Current
20
mA
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 RGK Current is not Included in measurement.
2/5
Steady, all for your advance
WCF10C60
Fig .2 Maximum Case Temperature
Fig.1Gate Characteristics
Fig. 3 Typical Forward Voltage
Fig. 4 Thermal Response
Fig.5Typical Gate Trigger Voltage
vs.Junction Temperature
Fig.6Typical Gate Trigger current
vs.Junction Temperature
3/5
Steady, all for your advance
WCF10C60
Fig.7 Typical Holding Current
Fig.8 Power Disspation
4/5
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WCF10C60
TO-220F Package Dimension
Unit: mm
5/5
Steady, all for your advance
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