WCFS0808C1E [WEIDA]
32K x 8 Static RAM; 32K x 8静态RAM
| 型号： | WCFS0808C1E |
| 厂家： | 
WEIDA SEMICONDUCTOR, INC. |
| 描述： | 32K x 8 Static RAM |
| 文件： | 总10页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
0808C1E
WCFS0808C1E
32K x 8 Static RAM
an automatic power-down feature, reducing the power con-
sumption by 81% when deselected. The WCFS0808C1E is in
the standard SOJ package.
Features
• High speed
— 12 ns
An active LOW Write Enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O0
through I/O7) is written into the memory location addressed by
the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
• Fast tDOE
• CMOS for optimum speed/power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The WCFS0808C1E is a high-performance CMOS static RAM
organized as 32K words by 8 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE) and active LOW
Output Enable (OE) and three-state drivers. This device has
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Logic Block Diagram
Pin Configurations
SOJ
Top View
A
A
V
CC
28
27
26
1
2
3
4
5
6
5
I/O
I/O
I/O
I/O
I/O
I/O
I/O
WE
A
4
6
0
1
2
3
4
5
6
INPUT BUFFER
A
A
7
8
A
3
25
24
A
0
A
A
9
1
A
2
A
1
A
2
A
10
A
11
23
22
A
3
A
7
OE
4
1024 x 32 x 8
ARRAY
A
A
A
A
5
A
21
20
19
18
17
16
15
A
12
13
14
8
9
10
11
12
13
0
6
A
CE
I/O
I/O
6
7
A
8
A
7
9
I/O
0
I/O
I/O
5
1
CE
WE
POWER
DOWN
I/O
GND
I/O
I/O
COLUMN
DECODER
2
4
14
3
I/O
7
OE
Selection Guide
WCFS0808C1E 12ns
WCFS0808C1E 15ns
Maximum Access Time (ns)
12
160
10
15
155
10
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Revised February 18, 2002
WCFS0808C1E
DC Voltage Applied to Outputs
in High Z State[1].................................... –0.5V to VCC + 0.5V
DC Input Voltage[1] ................................ –0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Latch-Up Current.................................................... >200 mA
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) ........................................... –0.5V to +7.0V
Operating Range
Range
Ambient Temperature[2]
VCC
Commercial
0°C to +70°C
5V 10%
Electrical Characteristics Over the Operating Range[3]
WCFS0808C1E 12ns
WCFS0808C1E 15ns
Parameter
VOH
Description
Test Conditions
Min.
Max.
Min.
Max.
Unit
Output HIGH
Voltage
VCC = Min., IOH=–4.0 mA
2.4
2.4
V
VOL
VIH
VIL
IIX
Output LOW
Voltage
VCC = Min., IOL=8.0 mA
0.4
0.4
V
V
Input HIGH
Voltage
2.2
–0.5
–5
VCC
+0.3V
2.2
–0.5
–5
VCC
+0.3V
Input LOW
Voltage
0.8
+5
0.8
+5
V
Input Load
Current
GND < VI < VCC
µA
µA
mA
IOZ
ICC
Output Leakage GND < VO < VCC
Current
,
–5
+5
–5
+5
Output Disabled
VCC Operating
Supply Current IOUT = 0 mA,
f = fMAX = 1/tRC
VCC = Max.,
Com’l
Com’l
160
155
ISB1
Automatic CE
Power-Down
Current— TTL
Inputs
Max. VCC
,
30
10
30
10
mA
mA
CE > VIH,
VIN > VIH or
VIN < VIL, f = fMAX
Max. VCC
CE > VCC – 0.3V
ISB2
Automatic CE
Power-Down
,
Com’l
Current—CMOS VIN > VCC – 0.3V
Inputs
or VIN < 0.3V, f = 0
]
Capacitance[1]
Parameter
Description
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
pF
CIN
Input Capacitance
Output Capacitance
8
8
COUT
Notes:
pF
1. VIL (min.)= –2.0V for pulse durations of less than 20 ns.
2. TA is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
4. Tested initially and after any design or process changes that may affect these parameters.
Page 2 of 10
WCFS0808C1E
AC Test Loads and Waveforms[5]
R1 481Ω
R1 481Ω
5V
5V
ALL INPUT PULSES
OUTPUT
OUTPUT
3.0V
GND
90%
10%
90%
10%
R2
255 Ω
R2
255Ω
30 pF
5 pF
≤t
≤t
r
r
INCLUDING
JIG AND
SCOPE
INCLUDING
JIG AND
SCOPE
C199–5
(a)
(b)
Equivalent to:
THÉVENIN EQUIVALENT
167 Ω
OUTPUT
1.73V
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
Description
VCC for Data Retention
Conditions[6]
Min.
Max.
Unit
V
2.0
0
[1]
tCDR
Chip Deselect to Data Retention Time VCC = VDR = 2.0V,
CE > VCC – 0.3V,
ns
[5]
tR
Operation Recovery Time
VIN > VCC – 0.3V or
200
µs
VIN < 0.3V
Data Retention Waveform
DATA RETENTION MODE
3.0V
3.0V
V
DR
> 2V
V
CC
t
t
R
CDR
CE
Note:
5. tR< 3 ns for the -12 and the -15 speeds. tR< 5 ns for the -20 and slower speeds
6. No input may exceed VCC + 0.5V.
Page 3 of 10
WCFS0808C1E
Switching Characteristics Over the Operating Range[3, 7]
WCFS0808C1E 12ns
WCFS0808C1E 15ns
Parameter
READ CYCLE
tRC
Description
Min.
12
3
Max.
Min.
Max.
Unit
Read Cycle Time
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z[8]
OE HIGH to High Z[8, 9]
CE LOW to Low Z[8]
CE HIGH to High Z[8,9]
CE LOW to Power-Up
CE HIGH to Power-Down
12
15
tOHA
3
tACE
12
5
15
7
tDOE
tLZOE
0
3
0
0
3
0
tHZOE
tLZCE
tHZCE
tPU
5
5
7
7
tPD
12
15
WRITE CYCLE[10, 11]
tWC
tSCE
tAW
Write Cycle Time
12
9
15
10
10
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
9
tHA
0
tSA
0
0
tPWE
tSD
8
9
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z[9]
8
9
tHD
0
0
tHZWE
7
7
tLZWE
WE HIGH to Low Z[8]
3
3
Notes:
7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels
of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance.
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
9. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD
.
Page 4 of 10
WCFS0808C1E
Read Cycle No. 1[12, 13]
t
RC
ADDRESS
DATA OUT
t
AA
t
OHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 [13, 14]
t
RC
CE
t
ACE
OE
t
t
HZOE
t
DOE
HZCE
t
LZOE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA OUT
DATA VALID
t
LZCE
t
PD
t
PU
V
ICC
CC
SUPPLY
CURRENT
50%
50%
ISB
Notes:
12. Device is continuously selected. OE, CE = VIL
13. .WE is HIGH for read cycle
Page 5 of 10
WCFS0808C1E
Write Cycle No. 1 (WE Controlled)[10, 15, 16]
t
WC
ADDRESS
CE
t
t
AW
HA
t
SA
t
PWE
WE
OE
t
SD
t
HD
DATA VALID
IN
DATA I/O
t
HZOE
Write Cycle No. 2 (CE Controlled)[10, 15, 16]
t
WC
ADDRESS
CE
t
SCE
t
SA
t
t
HA
AW
WE
t
t
HD
SD
DATA I/O
DATA VALID
IN
Notes:
14. Address valid prior to or coincident with CE transition LOW.
15. Data I/O is high impedance if OE = VIH
16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
.
Page 6 of 10
WCFS0808C1E
Write Cycle No. 3 (WE Controlled OE LOW)[11, 16]
t
WC
ADDRESS
CE
t
t
HA
AW
t
SA
WE
t
t
HD
SD
DATA I/O
DATA VALID
IN
t
t
LZWE
HZWE
Typical DC and AC Characteristics
NORMALIZED SUPPLY CURRENT
vs. AMBIENT TEMPERATURE
OUTPUT SOURCE CURRENT
vs. OUTPUT VOLTAGE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY
VOLTAGE
120
100
80
1.4
1.2
1.4
1.2
1.0
0.8
0.6
I
CC
I
CC
1.0
0.8
0.6
V
CC
=5.0V
60
T =25°C
A
V
IN
=5.0V
T =25°C
A
40
V
V
IN
=5.0V
=5.0V
0.4
CC
0.4
20
0
0.2
0.0
0.2
0.0
I
SB
I
SB
–55
25
125
0.0
1.0
2.0
3.0
4.0
4.0
4.5
5.0
5.5
6.0
AMBIENT TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
SUPPLY VOLTAGE (V)
NORMALIZED ACCESS TIME
vs. AMBIENT TEMPERATURE
OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE
NORMALIZED ACCESS TIME
vs. SUPPLY VOLTAGE
140
120
1.6
1.4
1.4
1.3
1.2
100
80
1.2
1.0
1.1
1.0
60
T =25°C
A
V
CC
=5.0V
T =25°C
A
V
CC
=5.0V
40
0.8
20
0
0.9
0.8
0.6
–55
0.0
1.0
2.0
3.0
4.0
25
125
4.0
4.5
5.0
5.5
6.0
AMBIENT TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
SUPPLY VOLTAGE (V)
Page 7 of 10
WCFS0808C1E
Typical DC and AC Characteristics (continued)
TYPICALPOWER-ON CURRENT
vs.SUPPLY VOLTAGE
TYPICAL ACCESS TIMECHANGE
vs. OUTPUT LOADING
NORMALIZED I vs.CYCLETIME
CC
3.0
2.5
2.0
1.5
30.0
25.0
20.0
15.0
1.25
1.00
0.75
0.50
V
=5.0V
CC
T =25°C
A
V
IN
=0.5V
V
=4.5V
1.0
0.5
10.0
5.0
CC
T =25°C
A
0.0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
0
200 400
600 800 1000
10
20
30
40
SUPPLY VOLTAGE (V)
CAPACITANCE (pF)
CYCLE FREQUENCY (MHz)
Truth Table
CE
H
L
WE
X
OE
X
Inputs/Outputs
High Z
Mode
Power
Deselect/Power-Down
Read
Standby (ISB
Active (ICC
Active (ICC
Active (ICC
)
H
L
Data Out
Data In
High Z
)
L
L
X
Write
)
L
H
H
Deselect, Output Disabled
)
Ordering Information
Speed
Package
Name
Operating
Range
(ns)
Ordering Code
WCFS0808C1E-JC12
WCFS0808C1E-JC15
Package Type
28-Lead Molded SOJ
28-Lead Molded SOJ
12
J
J
15
Commercial
Page 8 of 10
WCFS0808C1E
Package Diagrams
28-Lead (300-Mil) Molded SOJ,J
Page 9 of 10
WCFS0808C1E
Document Title: WCFS0808C1E 32K x 8 Static RAM
REV.
Issue Date
Orig. of Change
Description of Change
**
4/16/2002
XFL
New Datasheet
Page 10 of 10
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