WCF8C60 [WINSEMI]
Silicon Controlled Rectifiers; 可控硅整流器器
| 型号： | WCF8C60 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WCF8C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT(RMS)=8A)
Low On-State Voltage(1.4(Typ.)@ITM)
Isolation Voltage(VISO=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM/VRRM
IT(AV)
Parameter
Value
600
5
Units
Repetitive Peak Off-State Voltage
(Note(1)
TI =85 °C
TI =85 °C
tp=8.3ms
tp=10ms
tp=8.3ms
V
A
A
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
IT(RMS)
8
73
ITSM
I2t
Non Repetitive Surge Peak on-state Current
A
70
I2t Valuefor Fusing
24.5
A2s
A/㎲
Critical rate of rise of on-state current
ITM=2A;IG=10mA; dIG/dt=100A/µs
di/dt
TJ=125 °C
TJ=125 °C
50
1
PG(AV)
Average Gate Power Dissipation
W
IFGM
VRGM
VISO
TJ
Peak Gate Current
TJ=125 °C
TJ=125 °C
A,C.1minute
4
A
V
Reverse Peak Gate Voltage
Isolation Breakdown voltage(R.M..S)
Junction Temperature
5
1500
V
-40~125
-40~150
°C
°C
TSTG
Storage Temperature
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
20
RθJc
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
-
-
℃/W
℃/W
-
-
70
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WCF8C60
Electrical Characteristics (TJ=25℃ ,RGK=1KΩ unless otherwise specified)
Value
Min Typ
Symbol
Characteristics
Units
Max
TC=25℃
-
-
5
μA
mA
V
Off-state leakage current
(VAK=VDRM/VRRM
IDRM/IRRM
)
TC=125℃
2
VTM
Forward "On"voltage (ITM=16A tp=380µs)
(Note2.1)
-
1.4
-
1.6
Gate Trigger Current(continuous dc)
(VAK=12Vdc,RL=140Ω)
IGT
15
1.5
-
mA
V
(Note2.2)
(Note2.2)
(Note2.1)
Gate Trigger Voltage (continuous dc)
(VAK=12Vdc,RL=140Ω)
VGT
-
-
-
-
Gate threshold Voltage
VGD
dv/dt
0.1
5
V
(VD=12VDRM RL=3.3KΩ RGK=220Ω)
Critical Rate of Rise Off-State Voltage
(VD=0.67VDRM; RGK=220Ω)
TJ=125℃
-
V/㎲
IH
Holding Current(VD=12V;IGT=0.5mA)
Latching Current(VD=12V;IGT=0.5mA)
Dynamic resistance
-
-
-
2
2
-
5
6
mA
mA
mΩ
IL
Rd
TJ=125℃
46
*Notes:
2.1 Pulse Width ≤1.0ms,Duty cycle≤1%
2.2 RGK Current is not Included in measurement.
2/5
Steady, all for your advance
WCF8C60
Fig.1Maximum average power dissipation
versus average on-state current
Fig .2 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layont
Fig. 3Surge peak on-state current versus
Fig. 4On-state Characteristics (maximum values)
Number of cycles.
Fig.5Non-repetitive surge peak on-state current
for a sinusoidal pulse with width Tp<10ms and
corresponding value of l2t
Fig.6Relative variation of gate trigger current
and holding versus junction temperature
3/5
Steady, all for your advance
WCF8C60
Fig.8Relative variation of dv/dt immunity
versus gate-cathode capacitance (typical
values)
Fig.7Relative variation of dv/dt immunity
versus gate-cathode resistance (typical
values)
Fig.8Thermal Resistance junction to
ambient Versus copper surface under tab
(Epoxy printedCircuit board FR4,copper
thickness:35mm)
4/5
Steady, all for your advance
WCF8C60
TO-220F Package Dimension
Unit: mm
5/5
Steady, all for your advance
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