STF16A60H [WINSEMI]
Bi-Directional Triode Thyristor; 双向晶闸管
| 型号： | STF16A60H |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Bi-Directional Triode Thyristor |
| 文件： | 总4页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF16A60H
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=16A)
■ Isolation Voltage ( VISO = 1500V AC )
■ High Commutation dV/dt.
■ High Junction temperature(TJ=150℃)
General Description
Winsemi Triac STF16A60H is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
Typical Application
■ Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers,
Micro Wave Ovens, Hair Dryers, other control
applications
A1
A2
G
TO220F
■ Industrial Use :
SMPS, Copier Machines, Motor Controls, Dimmer,
SSR, Heater Controls, Vending Machines, other control
applications
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Para
Condition
Ratings Units
V
Repetitive Peak Off-State Voltage
600
V
DRM/VRRM
IT(RMS)
ITSM
TJ = 1118 °C
50/60Hz, One cycle, Peak value, non-repetitive
R.M.S On-State Current
Surge On-State Current
16
A
A
155/170
I2t
2
2
120
5
I t
A s
PGM
PG(AV)
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
W
W
A
0.5
2.0
VGM
TJ
Peak Gate Voltage
7.0
V
Operating Junction Temperature
Storage Temperature
-40~+150
-40~+150
℃
℃
TSTG
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
-
Max
3
RQJC
RQJA
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
-
℃/W
℃/W
-
-
150
Rev. B1 Jun.2009
T01-3
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
STF16A60H
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Characteristics
Symbol
IDRM/IRRM
VTM
Min Typ. Max Unit
off-state leakage current
TJ=150℃
-
-
-
3
mA
V
(VAK= VDRM/VRRM Single phase, half wave)
Forward “On” voltage (IT=25A, Inst. Measurement)
1.2
1.4
T2+,G+
T2+,G-
T2-,G-
T2+,G+
T2+,G-
T2-,G-
-
-
-
-
-
-
-
-
-
-
-
-
30
30
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
IGT
mA
V
30
1.5
1.5
1.5
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
)
VGT
Gate threshold Voltage
VGD
TJ=150℃
TJ=150℃
0.1
5
-
-
-
-
V
ＶＤ=1/2VDRM
,
Critical Rate of Rise of Off-State Voltage at Commutation
(VD=0.67VDRM ;(dｉ/dｔ)c=-8A/ms)
Holding Current
(dv/dt)C
V/μs
IH
IL
-
-
25
25
-
-
mA
mA
latching current
2/4
Steady, all.for your advance.
STF16A60H
3/4
Steady, all.for your advance.
STF16A60H
TO-220F Package Dimension
Unit: mm
4/4
Steady, all.for your advance.
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