STF16N50U [STMICROELECTRONICS]
N-channel 500 V, 0.47 Ohm, 15 A UltraFAST MESH(TM) Power MOSFET in TO-220FP package;
| 型号： | STF16N50U |
| 厂家： | 
ST |
| 描述： | N-channel 500 V, 0.47 Ohm, 15 A UltraFAST MESH(TM) Power MOSFET in TO-220FP package 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：680K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF16N50U
N-channel 500 V, 0.47 Ω, 15 A TO-220FP
UltraFAST MESH™ Power MOSFET
Features
VDSS
Tjmax.
@
RDS(on)
max.
Type
ID
Pw
STF16N50U
550 V
< 0.52 Ω 15 A 30 W
■ 100% avalanche tested
3
2
■ Outstanding dv/dt capability
■ Gate charge minimized
1
TO-220FP
■ Very low intrinsic capacitance
■ Very low R
DS(on)
■ Extremely low t
rr
Application
Figure 1.
Internal schematic diagram
■ Switching applications
D(2)
– High voltage inverters specific for LCD TV
– Lighting full bridge topology
– Motor control
Description
G(1)
TM
The device is an N-channel Ultrafast MESH
This technology associates all advantages of
.
reduced on-resistance. Zener gate protection and
very high dv/dt capability with an extremely
enhanced fast body-drain recovery diode.
S(3)
AM01476v1
Table 1.
Order code
STF16N50U
Device summary
Marking
Package
TO-220FP
Packaging
16N50U
Tube
September 2010
Doc ID 17923 Rev 1
1/12
www.st.com
12
Contents
STF16N50U
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 17923 Rev 1
STF16N50U
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
500
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
15 (1)
9 (1)
60 (1)
30
A
ID
A
(2)
IDM
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
11
A
Single pulse avalanche energy
EAS
250
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (3) Peak diode recovery voltage slope
VESD-(G-S) G-S EDS (HBM C=100 pF; R=1.5 kΩ)
Insulation withstand voltage (RMS) from all
20
V/ns
V
4000
three leads to external heat sink
VISO
2500
V
(t = 1 s; TC = 25 °C)
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Current is limited by wire features.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
3.29
62.5
°C/W
°C/W
Maximum lead temperature for soldering
purpose
Tl
300
°C
Doc ID 17923 Rev 1
3/12
Electrical characteristics
STF16N50U
2
Electrical characteristics
(T = 25 °C unless otherwise specified).
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
500
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
20 V
10
4.5
µA
V
current (VDS = 0)
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
3
3.75
0.47
VGS = 10 V, ID = 5 A
0.52
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
1950
250
59
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
-
-
-
pF
pF
Reverse transfer
capacitance
Equivalent
capacitance time
related
Co(tr)
-
78
pF
VGS = 0, VDS = 0 to 400 V
f = 1 MHz open drain
Equivalent
capacitance energy
related
Co(er)
-
-
58
-
-
pF
Intrinsic gate
resistance
RG
1.9
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 10 A,
VGS = 10 V
40
7
nC
nC
nC
-
-
(see Figure 13)
22
4/12
Doc ID 17923 Rev 1
STF16N50U
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
16
21
21
15
ns
ns
ns
ns
VDD = 250 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12)
-
-
Turn-off-delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
11
44
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 11 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
85
280
7
ns
nC
A
ISD = 11 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 35 V (see Figure 17)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 35 V, Tj = 150 °C
(see Figure 17)
120
490
8
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
Gate-source breakdown
voltage
BVGSO
Igs= 1 mA (open drain)
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 17923 Rev 1
5/12
Electrical characteristics
STF16N50U
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM07149v1
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.01
10
V
DS(V)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM07150v1
AM07151v1
I
D
(A)
I
D
(A)
V
DS=15V
V
GS=10V
30
25
20
20
6V
15
10
15
10
5
5V
5
0
4V
V
0
0
5
2
20
25
30
DS(V)
8
10
VGS(V)
10
15
0
4
6
Figure 6.
Normalized B
vs temperature Figure 7.
Static drain-source on resistance
VDSS
AM07152v1
AM07153v1
BVDSS
(norm)
R
DS(on)
(Ω)
1.15
1.10
1.05
1.00
V
GS=10V
0.50
0.49
0.48
0.47
0.46
0.45
0.44
0.95
0.90
0.85
0.80
4
6
8
2
10
-100
-50
0
50
TJ(°C)
0
ID(A)
100 150
6/12
Doc ID 17923 Rev 1
STF16N50U
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM07155v1
AM07154v1
V
(V)
GS
C
(pF)
450
400
VDS
V
GS
V
DD=400V
=11A
12
ID
Ciss
350
300
1000
10
8
250
200
150
100
100
Coss
Crss
6
4
2
0
10
1
50
0
10
20
40
0.1
100
30
Qg(nC)
VDS(V)
0
1
10
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM07156v1
AM07157v1
V
GS(th)
(norm)
RDS(on)
(norm)
1.1
2.5
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0
0.5
0.4
-100
-100
-50
-50
0
50
100
TJ
(°C)
0
50
TJ(°C)
150
100
150
Doc ID 17923 Rev 1
7/12
Test circuits
STF16N50U
3
Test circuits
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
µF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/12
Doc ID 17923 Rev 1
STF16N50U
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 17923 Rev 1
9/12
Package mechanical data
STF16N50U
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 18. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
10/12
Doc ID 17923 Rev 1
STF16N50U
Revision history
5
Revision history
Table 10. Document revision history
Date
Revision
Changes
09-Sep-2010
1
First release.
Doc ID 17923 Rev 1
11/12
STF16N50U
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Doc ID 17923 Rev 1
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