STF16NM50N [STMICROELECTRONICS]

N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP; N沟道500 V - 0.21ヘ - 15 A MDmesh⑩ II功率MOSFET采用D2PAK - I2PAK - TO- 220 - TO- 247- TO- 220FP
STF16NM50N
型号: STF16NM50N
厂家: ST    ST
描述:

N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
N沟道500 V - 0.21ヘ - 15 A MDmesh⑩ II功率MOSFET采用D2PAK - I2PAK - TO- 220 - TO- 247- TO- 220FP

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总18页 (文件大小:555K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STB16NM50N - STF/I16NM50N  
STP16NM50N - STW16NM50N  
N-channel 500 V - 0.21 - 15 A MDmesh™ II Power MOSFET  
D2PAK - I2PAK - TO-220 - TO-247- TO-220FP  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
3
2
1
1
STB16NM50N  
STI16NM50N  
STF16NM50N  
STP16NM50N  
STW16NM50N  
550 V  
550 V  
550 V  
550 V  
550 V  
0.26 Ω  
0.26 Ω  
0.26 Ω  
0.26 Ω  
0.26 Ω  
15 A  
15 A  
15 A (1)  
PAK  
PAK  
3
2
1
15 A  
TO-247  
15 A  
3
3
2
2
1
1
1. Limited only by maximum temperature allowed  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB16NM50N  
STI16NM50N  
STF16NM50N  
STP16NM50N  
STW16NM50N  
B16NM50N  
I16NM50N  
F16NM50N  
P16NM50N  
W16NM50N  
Tape and reel  
Tube  
PAK  
TO-220FP  
TO-220  
Tube  
Tube  
TO-247  
Tube  
March 2008  
Rev 2  
1/18  
www.st.com  
18  
Contents  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
2/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
PAK/I²PAK  
Parameter  
Unit  
TO-220FP  
TO-220/TO-247  
VDS  
VGS  
ID  
Drain-source voltage (VGS=0)  
500  
V
V
Gate-source voltage  
25  
15 (1)  
A
Drain current (continuous) at TC = 25°C  
Drain current (continuous) at TC = 100°C  
15  
9.4 (1)  
A
ID  
9.4  
(2)  
60 (1)  
A
Drain current (pulsed)  
60  
125  
15  
IDM  
PTOT  
Total dissipation at TC = 25°C  
Peak diode recovery voltage slope  
30  
W
dv/dt (3)  
V/ns  
Insulation withstand voltage (RMS) from all  
three leads to external heat sink  
(t=1s;TC=25°C)  
VISO  
--  
2500  
V
Tstg  
Tj  
Storage temperature  
-55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD 15A, di/dt 400A/µs, VDD = 80% V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
TO-220 I²PAK D²PAK TO-247 TO-220FP  
Unit  
Thermal resistance junction-  
case max  
Rthj-case  
Rthj-amb  
Rthj-pcb  
Tl  
1
4.2  
62.5  
--  
°C/W  
°C/W  
°C/W  
°C  
Thermal resistance junction-  
amb max  
62.5  
--  
50  
--  
Thermal resistance junction-  
pcb max  
--  
--  
30  
Maximum lead temperature for  
soldering purposes  
300  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-repetitive  
(pulse width limited by Tj max)  
IAS  
6
A
Single pulse avalanche energy  
EAS  
470  
mJ  
(starting Tj=25°C, ID=IAS, VDD= 50V)  
3/18  
Electrical characteristics  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
2
Electrical characteristics  
(T  
=25 °C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min.  
Typ. Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
dv/dt(1)  
IDSS  
ID = 1 mA, VGS= 0  
500  
V
V
DD = 400 V,ID = 15 A,  
GS = 10 V  
Drain-source voltage slope  
30  
V/ns  
V
VDS = Max rating,  
1
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
VDS = Max rating@125 °C  
100  
Gate body leakage current  
(VDS = 0)  
IGSS  
VGS = 20 V  
100  
nA  
VGS(th)  
RDS(on)  
VDS= VGS, ID = 250 µA  
VGS= 10 V, ID= 7.5 A  
Gate threshold voltage  
2
3
4
V
Static drain-source on  
resistance  
0.21  
0.26  
1. Characteristics value at turn off on inductive load  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
(1)  
VDS =15 V, ID= 7.5 A  
gfs  
Forward transconductance  
10  
S
Input capacitance  
Ciss  
Coss  
Crss  
1200  
80  
pF  
pF  
pF  
VDS = 50 V, f =1 MHz,  
VGS = 0  
Output capacitance  
Reverse transfer  
capacitance  
10  
Equivalent output  
capacitance  
(2)  
VGS = 0, VDS = 0 to 400 V  
Coss eq.  
170  
5
pF  
f=1 MHz Gate DC Bias=0  
Test signal level=20 mV  
open drain  
Rg  
Gate input resistance  
VDD = 400 V, ID = 15 A  
VGS = 10 V  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
38  
7
nC  
nC  
nC  
19  
(see Figure 19)  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
4/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Electrical characteristics  
Min. Typ Max Unit  
Table 7.  
Symbol  
Switching times  
Parameter  
Test conditions  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
20  
15  
60  
16  
ns  
ns  
ns  
ns  
VDD = 250 V, ID = 7.5 A,  
RG = 4.7 , VGS = 10 V  
(see Figure 18)  
Turn-off delay time  
Fall time  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ Max Unit  
ISD  
Source-drain current  
15  
60  
A
A
ISDM  
Source-drain current (pulsed)  
(1)  
VSD  
Forward on voltage  
ISD = 15 A, VGS=0  
1.3  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
400  
5
ns  
µC  
A
ISD =15 A, di/dt =100 A/µs,  
VDD = 100 V  
Qrr  
(see Figure 23)  
IRRM  
24  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
500  
6
ns  
µC  
A
VDD = 100 V  
Qrr  
di/dt =100 A/µs, ISD = 15 A  
Tj = 150 °C (see Figure 23)  
IRRM  
24  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
5/18  
Electrical characteristics  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area for TO-220 /  
PAK / I²PAK  
Figure 3. Thermal impedance for TO-220 /  
PAK / I²PAK  
Figure 4. Safe operating area for TO-220FP  
Figure 6. Safe operating area for TO-247  
6/18  
Figure 5. Thermal impedance for TO-220FP  
Figure 7. Thermal impedance for TO-247  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Electrical characteristics  
Figure 8. Output characteristics  
Figure 9. Transfer characteristics  
Figure 10. Transconductance  
Figure 11. Static drain-source on resistance  
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations  
7/18  
Electrical characteristics  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs  
vs temperature  
temperature  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Normalized B  
vs temperature  
VDSS  
8/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Test circuit  
3
Test circuit  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped Inductive load test  
circuit  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
9/18  
Package mechanical data  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
10/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Package mechanical data  
TO-220 mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
11/18  
Package mechanical data  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
TO-220FP mechanical data  
mm.  
Typ.  
inch  
Typ.  
DIM.  
Min.  
4.4  
Max.  
4.6  
2.7  
2.75  
0.7  
1
Min.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
Max.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
12/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Package mechanical data  
TO-247 Mechanical data  
mm.  
Dim.  
Min.  
Typ  
Max.  
A
A1  
b
4.85  
5.15  
2.20  
1.0  
2.60  
1.40  
2.40  
3.40  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
0.80  
D
20.15  
15.75  
E
e
5.45  
18.50  
5.50  
L
14.20  
14.80  
4.30  
L1  
L2  
øP  
øR  
S
3.70  
3.55  
3.65  
4.50  
5.50  
13/18  
Package mechanical data  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
I²PAK (TO-262) mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
A1  
b
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
14/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Package mechanical data  
PAK (TO-263) mechanical data  
mm  
Typ  
inch  
Dim  
Min  
Max  
Min  
Typ  
Max  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
0.173  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.295  
0.394  
0.334  
0.181  
0.009  
0.037  
0.067  
0.024  
0.053  
0.368  
b2  
c
c2  
D
D1  
E
10.40  
0.409  
E1  
e
8.50  
2.54  
0.1  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
0.192  
0.590  
0.099  
0.090  
0.05  
0.208  
0.624  
0.106  
0.110  
0.055  
0.069  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
0079457_M  
15/18  
Packaging mechanical data  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
16/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Revision history  
6
Revision history  
Table 9.  
Date  
Document revision history  
Revision  
Changes  
12-Oct-2007  
04-Mar-2008  
1
2
First release  
Table 3: Thermal data has been updated.  
17/18  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE  
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2008 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
18/18  

相关型号:

STF17N25

17A, 250V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, FULL PACK-3
STMICROELECTR

STF17NF25

N-channel 250V - 0.14ヘ - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET⑩ II Power MOSFET
STMICROELECTR

STF18N55M5

N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220
STMICROELECTR

STF18NM60N

N-channel 600 V, 13 A, TO-220, TO-220FP, TO-247, D2PAK second generation MDmesh™ Power MOSFET
STMICROELECTR

STF18NM80

N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
STMICROELECTR

STF19NF20

N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET
STMICROELECTR

STF19NM50N

N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247
STMICROELECTR

STF19NM65N

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
STMICROELECTR

STF201-22

USB Downstream Post Filter & TVS For EMI Filtering and ESD Protection
SEMTECH

STF201-22.TC

USB Downstream Port Filter & TVS
SEMTECH

STF201-22.TCT

USB Downstream Port Filter & TVS
SEMTECH

STF201-22TC

USB Downstream Post Filter & TVS For EMI Filtering and ESD Protection
SEMTECH