STF16NK60Z [STMICROELECTRONICS]
N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET; N沟道600 V , 038 Ω , 14 A, TO- 220 , TO- 220FP , TO- 247齐纳保护超网?功率MOSFET![STF16NK60Z](http://pdffile.icpdf.com/pdf1/p00150/img/icpdf/STF16_830433_icpdf.jpg)
型号: | STF16NK60Z |
厂家: | ![]() |
描述: | N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET |
文件: | 总15页 (文件大小:748K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STF16NK60Z
STP16NK60Z, STW16NK60Z
N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
Pw
STF16NK60Z
STP16NK60Z
600 V < 0.42 Ω 14 A(1) 40 W
600 V < 0.42 Ω 14 A 190 W
3
3
2
2
1
1
TO-220
TO-220FP
STW16NK60Z 600 V < 0.42 Ω 14 A 190 W
1. Limited by package.
■ 100% avalanche tested
3
2
■ Extremely high dv/dt capability
■ Gate charge minimized
TO-247 1
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Figure 1.
Internal schematic diagram
Application
D(2)
■ Switching applications
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
based PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF16NK60Z
STP16NK60Z
STW16NK60Z
F16NK60Z
P16NK60Z
W16NK60Z
TO-220FP
TO-220
Tube
TO-247
December 2009
Doc ID 10249 Rev 5
1/15
www.st.com
15
Contents
STF16NK60Z, STP16NK60Z, STW16NK60Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220 / TO-247
Parameter
Unit
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
600
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
14
8.8
56
14 (1)
8.8 (1)
56(1)
40
A
A
ID
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
190
W
1.51
6000
4.5
W/°C
Gate source ESD(HBM-C = 100 pF,
VESD(G-S)
V
R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
2500
V
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
TO-220 TO-247
TO-220FP
3.1
Unit
°C/W
°C/W
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.66
62.5
50
300
62.5
Maximum lead temperature for soldering
purpose
Tl
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
14
A
Single pulse avalanche energy
EAS
360
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Doc ID 10249 Rev 5
3/15
Electrical characteristics
STF16NK60Z, STP16NK60Z, STW16NK60Z
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
620
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
20 V
10
µA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
3
3.75
0.38
4.5
VGS = 10 V, ID = 7 A
0.42
Ω
resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
2650
285
62
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
-
-
pF
pF
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
COSS eq
VGS = 0, VDS = 0 to 480 V
-
-
158
-
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 14 A,
VGS = 10 V
86
17
46
nC
nC
nC
(see Figure 19)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
30
25
70
15
ns
VDD = 480 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
ns
-
-
Turn-off-delay time
Fall time
ns
ns
4/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
Electrical characteristics
Min. Typ. Max. Unit
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
14
56
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 14 A, VGS = 0
1.6
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
490
5.4
22
ns
nC
A
ISD = 14 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 100 V (see Figure 23)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 14 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 23)
585
7
ns
nC
A
Qrr
IRRM
24
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
30
Gate-source breakdown
voltage
BVGSO
Igs= 1 mA (open drain)
-
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 10249 Rev 5
5/15
Electrical characteristics
STF16NK60Z, STP16NK60Z, STW16NK60Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Thermal impedance for TO-220FP
Thermal impedance for TO-247
Figure 4.
Safe operating area for TO-220FP
Figure 5.
AM01498v1
I
D
(A)
101
100
10µs
100µs
1ms
10ms
10-1
10-2
10-1
100
102
101
V
DS(V)
Figure 6.
Safe operating area for TO-247
Figure 7.
6/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Normalized BV
vs temperature Figure 11. Static drain-source on resistance
DSS
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Doc ID 10249 Rev 5
7/15
Electrical characteristics
STF16NK60Z, STP16NK60Z, STW16NK60Z
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Maximum avalanche energy vs
temperature
8/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
Test circuits
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
µF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 10249 Rev 5
9/15
Package mechanical data
STF16NK60Z, STP16NK60Z, STW16NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
Table 10. TO-220FP mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 24. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 10249 Rev 5
11/15
Package mechanical data
STF16NK60Z, STP16NK60Z, STW16NK60Z
TO-220 type A mechanical data
mm
Typ
Dim
Min
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
12/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
Doc ID 10249 Rev 5
13/15
Revision history
STF16NK60Z, STP16NK60Z, STW16NK60Z
5
Revision history
Table 11. Document revision history
Date
Revision
Changes
11-Sep-2006
07-Jun-2007
04-Dec-2009
3
4
5
Added statement for ECOPACK®.
Updated packages mechanical data.
14/15
Doc ID 10249 Rev 5
STF16NK60Z, STP16NK60Z, STW16NK60Z
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Doc ID 10249 Rev 5
15/15
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