概述
数据手册MMBT2222ALT1 概述
General Purpose Transistors NPN Silicon 通用晶体管NPN硅
MMBT2222ALT1 数据手册
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PDF下载WILLAS
GeneralPurposeTransistors
NPN Silicon
MMBT2222LT1
M MBT2222ALT1
RoHS product for packing code suffix "G",
•
Halogen free product for packing code suffix "H"
.
•
Weight : 0.008g
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
2222
30
2222A
40
Unit
Vdc
SOT– 23
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
60
75
Vdc
5.0
600
6.0
Vdc
3
COLLECTOR
600
mAdc
1
THERMAL CHARACTERISTICS
Characteristic
BASE
Symbol
Max
Unit
2
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
EMITTER
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
ORDERING INFORMATION
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Device
Marking
M1B
Shipping
2.4
417
mW/°C
°C/W
°C
M MBT2222LT1
M MBT2222ALT1
3000/Tape & Reel
3000/Tape & Reel
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
1P
TJ , Tstg
–55 to +150
DEVICE MARKING
M MBT2222LT1= M1B ; MMBT2222ALT1= 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 10 mAdc, I B = 0)
M MBT2222
V(BR)CEO
30
40
—
Vdc
M MBT2222A
––
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
M MBT2222
M MBT2222A
M MBT2222
M MBT2222A
M MBT2222A
V
60
75
—
Vdc
Vdc
(BR)CBO
V
5.0
6.0
—
—
––
10
(BR)EBO
CEX
Collector Cutoff Current
I
nAdc
µAdc
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)
Collector Cutoff Current
I CBO
(V CB = 50 Vdc, I E = 0)
M MBT2222
M MBT2222A
M MBT2222
M MBT2222A
––
––
––
––
0.01
0.01
10
(V CB = 60 Vdc, I E = 0)
(V CB = 50 Vdc, I E = 0, T A = 125°C)
(V CB = 60 Vdc, I E = 0, T A = 125°C)
Emitter Cutoff Current
10
(V EB = 3.0 Vdc, I C = 0)
M MBT2222A
M MBT2222A
I EBO
I BL
—
—
100
20
nAdc
nAdc
Base Cutoff Current
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
WILLAS
M MBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
––
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C )
(I C = 150 mAdc, V CE = 10 Vdc) (3)
(I C = 150 mAdc, V CE = 1.0 Vdc) (3)
(I C = 500 mAdc, V CE = 10 Vdc)(3)
35
50
75
35
100
50
30
40
––
––
—
M MBT2222A only
—
300
––
––
—
M MBT2222
M MBT2222A
Collector–Emitter Saturation Voltage(3)
(I C = 150 mAdc, I B = 15 mAdc)
VCE(sat)
Vdc
Vdc
M MBT2222
M MBT2222A
M MBT2222
M MBT2222A
––
––
––
––
0.4
0.3
1.6
1.0
(I C = 500mAdc, I B = 50 mAdc)
Base–Emitter Saturation Voltage
(I C = 150 mAdc, I B = 15 mAdc)
V BE(sat)
M MBT2222
M MBT2222A
M MBT2222
M MBT2222A
––
0.6
––
––
1.3
1.2
2.6
2.0
(I C = 500 mAdc, I B = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
M MBT2222
f
250
300
––
––
––
MHz
T
M MBT2222A
C obo
8.0
30
pF
pF
M MBT2222
C
––
ibo
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
M MBT2222A
––
25
Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) M MBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) M MBT2222A
h ie
h re
hfe
2.0
0.25
–-
8.0
1.25
8.0
4.0
300
375
35
kΩ
X 10 –4
—
Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) M MBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
M MBT2222A
—
Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) M MBT2222A
50
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
M MBT2222A
75
Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) M MBT2222A
h oe
5.0
25
µmhos
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Curren Base Time Comstant
M MBT2222A
M MBT2222A
200
(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz)
rb, C C
NF
––
––
150
4.0
ps
Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz) M MBT2222A
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30 Vdc, V EB(off) = – 0.5 Vdc
I C = 150 mAdc, I B1 = 15 mAdc)
(V CC = 30 Vdc, I C = 150 mAdc
t d
t r
—
—
—
—
10
25
ns
ns
t s
t f
225
60
I
B1 = I B2 = 15 mAdc)
3. Pulse Test: Pulse Width
<300 µs, Duty Cycle <2.0%.
4.f T is defined as the frequency at which h fe extrapolates to unity.
WILLAS
M MBT2222LT1 MMBT2222ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100µs,
DUTY CYCLE
1.0 to 100µs,
DUTY CYCLE
200
200
~ 2%
~
+ 16 V
0
~
~
2%
+ 16 V
0
1.0 k
1.0 k
C S*< 10 pF
–14 V
C S* < 10 pF
1N914
– 4.0 V
< 20 ns
– 2.0V
<2.0 ns
Scope rise time < 4.0ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
700
V CE= 10 V
V CE=1.0 V
500
T J = +125°C
300
200
+25°C
–55°C
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
20
300
500 700 1.0k
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
500mA
100mA
10 mA
I C=1.0 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
I B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
WILLAS
M MBT2222LT1 MMBT2222ALT1
200
100
V CC= 30V
I C/ I B= 10
I B1 = I B2
I C /I B = 10
TJ= 25°C
70
50
100
70
t ’s= t s–1/8 t f
t r @V CC= 30V
TJ= 25°C
50
t d@V EB(off) = 2.0V
t d@V EB(off) =0
30
20
30
20
t f
10
7.0
5.0
10
7.0
3.0
2.0
5.0
5.0 7.0 10
20
30
50 70 100
200 300
500
5.0 7.0 10
20
30
50 70 100
200 300
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Turn - Off Time
10
8
10
8
R S = OPTIMUM
f = 1.0 kHz
RS = SOURCE
I
I
I
I
C = 1.0 mA, R S = 150 Ω
C = 500 µA, R S = 200 Ω
C = 100 µA, R S = 2.0 kΩ
C = 50 µA, R S = 4.0 kΩ
RS = RESISTANCE
I C=50 µA
100 µA
500 µA
1.0 mA
6
6
4
4
2
2
0
0
0.010.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
50 100 200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
f , FREQUENCY (kHz)
R S, SOURCE RESISTANCE (kΩ)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
20
500
V CE = 20 V
T J = 25°C
300
200
C eb
10
7.0
5.0
100
Ccb
3.0
2.0
70
50
1.0
2.0
3.0
5.0 7.0 210
20
30
50 70 100
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20 30
50
I C , COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
Figure 10. Current– Gain Bandwidth Product
Figure 9. Capacitance
WILLAS
M MBT2222LT1
MMBT2222ALT1
10
+0.5
0
T J = 25°C
R θVC for V CE(sat)
0.8
V BE(sat) @ I C /I B =10
0.6
– 0.5
–1.0
–1.5
–2.0
– 2.5
1.0 V
V BE(on) @ V CE =10 V
0.4
0.2
R θVB for V BE
V
CE(sat) @ I C /I B =10
0
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500 1.0k
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
Figure 11. “On” Voltages
WILLAS
M MBT2222LT1
MMBT2222ALT1
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
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