2SC5354G [WEITRON]
Transistor;
| 型号： | 2SC5354G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总3页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5354
NPN Plastic-Encapsulate Transistor
3
P b
Lead(Pb)-Free
1
2
FEATURES
* Excellent hFE Linearity
* Low Noise
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
60
V
50
5
V
Collector Current -Continuous
Base Current -Continuous
Collector Power Dissipation
Junction Temperature
150
50
mA
mA
W
Ib
PC
0.2
TJ
150
-55-150
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
60
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
IC=100μA, IE=0
V(BR)CEO IC= 10mA, IB=0
IE= 10μA, I
50
V
V
V(BR)EBO
ICBO
C=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
5
VCB=60V, IE=0
μA
μA
0.1
0.1
700
IEBO
VEB=5V, IC=0
hFE(1)
VCE(sat)
fT
VCE=6V, IC= 2mA
IC=100mA,IB=10mA
70
80
DC current gain
Collector-emitter saturation voltage
Transition frequency
0.1
0.25
V
MHz
pF
V
CE=10V, IC= 1mA
VCB=10V,IE=0,f=1MHz
=6V, IC= 0.1mA,
Cob
Collector output capacitance
Noise figure
3.5
10
VCE
NF
dB
f=1KHZ,Rg=10KΩ
CLASSIFICATION OF hFE
Y
L
Rank
G
O
120 - 240
70 - 140
200 - 400
Range
300 - 700
WEITRON
http://www.weitron.com.tw
04-Oct-2010
1/3
2SC5354
Typical Characteristics
WEITRON
http://www.weitron.com.tw
04-Oct-2010
2/3
2SC5354
SOT-23 Package OutlineDimensions
Unit:mm
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
TOP VI EW
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON
http://www.weitron.com.tw
04-Oct-2010
3/3
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