2SC5355_05 [TOSHIBA]
High Voltage Switching Applications; 高电压开关应用型号: | 2SC5355_05 |
厂家: | TOSHIBA |
描述: | High Voltage Switching Applications |
文件: | 总4页 (文件大小:157K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SC5355
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5355
High Voltage Switching Applications
Unit: mm
Switching Regulator Applications
DC-DC Converter Applications
•
•
•
Excellent switching times: t = 0.5 µs (max), t = 0.3 µs (max)
r
f
High collector breakdown voltage: V
= 400 V
CEO
High DC current gain: h
= 20 (min)
FE
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
V
CEO
V
EBO
600
V
V
V
400
7
DC
I
5
C
Collector current
Base current
A
A
Pulse
I
7
1
CP
I
B
JEDEC
JEITA
―
―
Ta = 25°C
Tc = 25°C
1.5
Collector power
dissipation
P
W
C
25
Junction temperature
T
150
−55~150
°C
°C
TOSHIBA
2-7B5A
j
Storage temperature range
T
stg
Weight: 0.36 g (typ.)
JEDEC
JEITA
―
―
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
1
2005-02-01
2SC5355
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 480 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
―
―
―
―
―
―
―
―
―
―
100
10
―
µA
µA
V
CBO
CB
E
Emitter cut-off current
= 7 V, I = 0
C
EBO
EB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
V
I
C
I
C
= 1 mA, I = 0
600
400
12
(BR) CBO
(BR) CEO
E
= 10 mA, I = 0
―
V
B
h
V
= 5 V, I = 1 mA
―
FE (1)
FE (2)
CE
CE
C
DC current gain
h
V
= 5 V, I = 0.5 A
20
65
1.0
1.3
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
I
C
I
C
= 2 A, I = 0.25 A
―
V
V
CE (sat)
BE (sat)
B
V
= 2 A, I = 0.25 A
―
B
Rise time
t
r
―
―
―
―
―
―
0.5
2.0
0.3
OUTPUT
20 µs
I
B1
B2
INPUT
I
Switching time
µs
Storage time
Fall time
t
stg
V
CC
≈ 200 V
I
B1
= 0.25 A, I = −0.5 A
B2
t
f
DUTY CYCLE ≤ 1%
Marking
C5355
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-02-01
2SC5355
I
– V
I – V
C BE
C
CE
5
4
3
2
1
0
5
4
3
2
1
Common emitter
= 5 V
Common emitter
Tc = 25°C
500
400
V
CE
300
200
100
Tc = 100°C
50
= 20 mA
I
B
25 −40
0
0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
BE
(V)
CE
h
FE
– I
C
V
– I
CE (sat) C
100
30
10
Common emitter
/I = 5
Tc = 100°C
I
C
B
Tc = 100°C
25
−40
3
1
10
3
Common emitter
= 5 V
−40
V
CE
25
0.01
0.1
Collector current
1
10
I
C
(A)
0.3
−1000
0.01
0.1
Collector current
1
10
I
(A)
C
Safe Operating Area
10
I
C
max (pulse)*
10 µs*
1 ms*
100 µs*
3
1
I
max
C
10 ms*
100 ms*
(continuous)
DC operation
Tc = 25°C
0.3
0.1
*: Single nonrepetitive
pulse Tc = 25°C
0.03
0.01
Curves must be derated
linearly with increase in
temperature.
V
CEO
max
2
10
100
1000
Collector-emitter voltage
V
(V)
CE
3
2005-02-01
2SC5355
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2005-02-01
相关型号:
2SC5356
Excellent switching times: tf= 0.5 ìs (max) (IC = 1.2 A) High DC current gain: hFE = 15 (min) (IC = 0.15 A)
TYSEMI
2SC5356
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)
TOSHIBA
2SC5358-O
TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power
TOSHIBA
2SC5358-R
TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明