2SC5356 [KEXIN]
Silicon NPN Triple Diffused Type; 硅NPN三重DIFFUSED TYPE
| 型号： | 2SC5356 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Triple Diffused Type |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Triple Diffused Type
2SC5356
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Features
Excellent switching times: tf = 0.5 ìs (max) (IC = 1.2 A)
High collectors breakdown voltage: VCEO = 800 V
High DC current gain: hFE = 15 (min) (IC = 0.15 A)
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
900
800
V
7
V
Collector current ( DC)
Collector current (Pulse)
Base current
3
A
A
ICP
5
IB
1
1.5
Collector power dissipation Ta = 25
TC = 25
PC
W
25
Junction temperature
Storage temperature range
Tj
150
Tstg
-55 to +150
1
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SMD Type
Transistors
2SC5356
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Symbol
ICBO
IEBO
V (BR) CBO
V (BR) CEO
Testconditons
VCB = 720 V, IE = 0
Min
Typ
Max
100
10
Unit
ìA
ìA
V
Emitter cut-off current
VEB = 7 V, IC = 0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
IC = 1 mA, IE = 0
900
800
10
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.15 A
IC = 1.2 A, IB = 0.24 A
IC = 2 A, IB = 0.24 A
V
DC current gain
hFE
15
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE (sat)
VBE (sat)
1.0
1.3
V
V
Switching time Rise time
Switching time Storage time
Switching time Fall time
tr
tstg
tf
0.7
4.0
0.5
ìs
Marking
Marking
C5356
2
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