2SC5355(SM) [ETC]

BJT ; BJT\n
2SC5355(SM)
型号: 2SC5355(SM)
厂家: ETC    ETC
描述:

BJT
BJT\n

文件: 总4页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5355  
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type  
2SC5355  
High Voltage Switching Applications  
Switching Regulator Applications  
DC-DC Converter Applications  
Unit: mm  
Excellent switching times: t = 0.5 µs (max), t = 0.3 µs (max)  
r
f
High collector breakdown voltage: V  
= 400 V  
CEO  
High DC current gain: h  
= 20 (min)  
FE  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
600  
V
V
V
400  
7
DC  
Collector current  
Pulse  
I
5
JEDEC  
JEITA  
C
A
A
I
7
1
CP  
Base current  
I
B
TOSHIBA  
2-7B5A  
Ta = 25°C  
1.5  
Collector power  
Weight: 0.36 g (typ.)  
P
W
C
dissipation  
Tc = 25°C  
25  
Junction temperature  
T
150  
55~150  
°C  
°C  
j
Storage temperature range  
T
stg  
JEDEC  
JEITA  
TOSHIBA  
2-7B6A  
Weight: 0.36 g (typ.)  
1
2002-07-23  
2SC5355  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 480 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
100  
10  
µA  
µA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 7 V, I = 0  
C
EBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
V
V
I
I
= 1 mA, I = 0  
600  
400  
12  
(BR) CBO  
(BR) CEO  
C
C
E
= 10 mA, I = 0  
V
B
h
h
V
V
= 5 V, I = 1 mA  
FE (1)  
CE  
CE  
C
DC current gain  
= 5 V, I = 0.5 A  
20  
65  
1.0  
1.3  
FE (2)  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
I
I
= 2 A, I = 0.25 A  
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= 2 A, I = 0.25 A  
B
Rise time  
t
r
0.5  
2.0  
0.3  
OUTPUT  
20 µs  
I
B1  
B2  
INPUT  
I
Switching time  
µs  
Storage time  
Fall time  
t
stg  
V
200 V  
CC  
I
= 0.25 A, I = 0.5 A  
B2  
B1  
t
f
DUTY CYCLE 1%  
Marking  
C5355  
Product No.  
Lot No.  
Explanation of Lot No.  
Month of manufacture: January to December are denoted by letters A to L respectively.  
Year of manufacture: last decimal digit of the year of manufacture  
2
2002-07-23  
2SC5355  
I
– V  
I – V  
C BE  
C
CE  
5
4
3
2
1
5
4
3
2
1
Common emitter  
= 5 V  
Common emitter  
Tc = 25°C  
500  
400  
V
CE  
300  
200  
100  
Tc = 100°C  
50  
= 20 mA  
I
B
8
25 40  
0
0
0
0
2
4
6
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-emitter voltage  
V
(V)  
Base-emitter voltage  
V
(V)  
CE  
BE  
h
– I  
V
– I  
CE (sat) C  
FE  
C
100  
30  
10  
Common emitter  
/I = 5  
Tc = 100°C  
I
C B  
Tc = 100°C  
25  
40  
3
1
10  
3
Common emitter  
= 5 V  
40  
V
CE  
25  
0.01  
0.1  
Collector current  
1
10  
I
C
(A)  
0.3  
1000  
0.01  
0.1  
Collector current  
1
10  
I
C
(A)  
Safe Operating Area  
10  
I
max (pulse)*  
C
10 µs*  
1 ms*  
100 µs*  
3
1
I
max  
C
10 ms*  
100 ms*  
(continuous)  
DC operation  
Tc = 25°C  
0.3  
0.1  
*: Single nonrepetitive  
pulse Tc = 25°C  
0.03  
0.01  
Curves must be derated  
linearly with increase in  
temperature.  
V
CEO  
max  
2
10  
100  
1000  
Collector-emitter voltage  
V
(V)  
CE  
3
2002-07-23  
2SC5355  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
The information contained herein is subject to change without notice.  
4
2002-07-23  

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