VS-HFA08TB60SPBF [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2;型号: | VS-HFA08TB60SPBF |
厂家: | VISHAY |
描述: | Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2 功效 光电二极管 |
文件: | 总8页 (文件大小:642K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-HFA08TB60SPbF
Vishay Semiconductors
www.vishay.com
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Base
cathode
+
2
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
Anode
1
3
N/C
-
D2PAK
• Reduced parts count
DESCRIPTION
VS-HFA08TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the
VS-HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally suited
for applications in power supplies (PFC boost diode) and
power conversion systems (such as inverters), motor drives,
and many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
8 A
IF(AV)
VR
600 V
VF at IF
1.7 V
trr (typ.)
TJ max.
Diode variation
18 ns
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
600
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
8
IFSM
IFRM
60
A
Maximum repetitive forward current
24
TC = 25 °C
36
14
Maximum power dissipation
PD
W
T
C = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Revision: 07-Sep-12
Document Number: 94048
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60SPbF
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 8.0 A
IF = 16 A
-
-
-
-
-
-
-
1.4
1.7
1.4
0.3
100
10
1.7
2.1
1.7
5.0
500
25
V
Maximum forward voltage
VFM
See fig. 1
IF = 8.0 A, TJ = 125 °C
Maximum reverse
leakage current
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
IRM
See fig. 2
See fig. 3
µA
Junction capacitance
Series inductance
CT
LS
VR = 200 V
pF
Measured lead to lead 5 mm from package body
8.0
-
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
18
Reverse recovery time
See fig. 5, 6
trr1
37
55
ns
trr2
TJ = 125 °C
55
90
IRRM1
IRRM2
Qrr1
TJ = 25 °C
3.5
4.5
65
5.0
8.0
138
360
Peak recovery current
A
TJ = 125 °C
IF = 8.0 A
dIF/dt = 200 A/μs
TJ = 25 °C
Reverse recovery charge
See fig. 7
VR = 200 V
nC
Qrr2
TJ = 125 °C
TJ = 25 °C
124
dI(rec)M/dt1
dI(rec)M/dt2
-
-
240
210
-
-
Peak rate of fall of
recovery current during tb
See fig. 8
A/µs
TJ = 125 °C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
3.5
80
K/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
Marking device
Case style D2PAK
HFA08TB60S
Revision: 07-Sep-12
Document Number: 94048
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60SPbF
Vishay Semiconductors
www.vishay.com
100
10
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
1
TJ = 25 °C
0.01
0.001
0.1
0.4
0
100
200
300
400
500
600
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 1 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 2 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 07-Sep-12
Document Number: 94048
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60SPbF
Vishay Semiconductors
www.vishay.com
80
60
40
20
0
500
400
300
200
100
0
VR = 200 V
IF = 16 A
IF = 8 A
IF = 4 A
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Stored Charge vs. dIF/dt
dIF/dt (A/µs)
Fig. 3 - Typical Reverse Recovery Time vs. dIF/dt
20
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
IF = 4 A
15
IF = 16 A
IF = 8 A
IF = 4 A
10
5
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
100
100
1000
1000
dIF/dt (A/µs)
Fig. 4 - Typical Recovery Current vs. dIF/dt
dIF/dt (A/µs)
Fig. 6 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 07-Sep-12
Document Number: 94048
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60SPbF
Vishay Semiconductors
www.vishay.com
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 7 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 3 - Reverse Recovery Waveform and Definitions
Revision: 07-Sep-12
Document Number: 94048
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60SPbF
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- HF
A
08
TB
60
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator: A = Electron irradiated
Current rating (08 = 8 A)
Package outline (TB = TO-220, 2 leads)
Voltage rating (60 = 600 V)
S = D2PAK
•
•
•
•
•
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
PbF = Lead (Pb)-free
-
9
P = Lead (Pb)-free (for D2PAK TRR and TRL)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
VS-HFA08TB60SPBF
VS-HFA08TB60STRRP
VS-HFA08TB60STRLP
50
1000
800
800
800
800
13" diameter reel
Revision: 07-Sep-12
Document Number: 94048
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
Document Number: 91000
1
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