VS-HFA140FA120 [VISHAY]
Ultrafast Soft Recovery Diode, 140 A; 超快软恢复二极管， 140一个
| 型号： | VS-HFA140FA120 |
| 厂家： | 
VISHAY |
| 描述： | Ultrafast Soft Recovery Diode, 140 A |
| 文件： | 总7页 (文件大小：872K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA140FA120
Vishay Semiconductors
www.vishay.com
HEXFRED®
Ultrafast Soft Recovery Diode, 140 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
SOT-227
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
The dual diode series configuration VS-HFA140FA120 is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
VR
1200 V
2.8 V
VF (typical)
trr (typical)
48 ns
IF(DC) at TC, per module
140 A at 74 °C
140 A at 46 °C
I
F(AV) at TC, per module
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
70
UNITS
Cathode to anode voltage
VR
V
per leg
Continuous forward current
per module
IF
TC = 74 °C
140
A
Single pulse forward current
Maximum power dissipation, per leg
RMS isolation voltage
IFSM
PD
TJ = 25 °C
TC = 25 °C
350
357
W
TC = 100 °C
143
VISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage
temperature range
TJ, TStg
- 55 to + 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 60 A
-
-
-
-
-
-
-
2.8
3.6
2.7
2.65
2.0
1.6
5
4.0
5.3
-
V
IF = 120 A
Forward voltage, per leg
VFM
IF = 60 A, TJ = 125 °C
IF = 60 A, TJ = 150 °C
VR = VR rated
-
75
5
μA
Reverse leakage current, per leg
IRM
TJ = 125 °C, VR = VR rated
TJ = 150 °C, VR = VR rated
mA
10
Revision: 20-Jul-12
Document Number: 94746
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA140FA120
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
48
-
-
-
-
-
-
-
-
Reverse recovery time, per leg
trr
145
218
13
ns
TJ = 125 °C
IF = 50 A
TJ = 25 °C
Peak recovery current, per leg
IRRM
dIF/dt = - 200 A/μs
A
TJ = 125 °C
TJ = 25 °C
18
VR = 200 V
910
1920
27
Reverse recovery charge, per leg
Junction capacitance, per leg
Qrr
CT
nC
pF
TJ = 125 °C
VR = 1200 V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
0.35
0.175
-
UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink, per leg
-
-
-
-
-
-
-
RthJC
°C/W
RthCS
Flat, greased and surface
0.05
30
-
Weight
-
g
Mounting torque, on terminals and heatsink
T
1.3
Nm
Revision: 20-Jul-12
Document Number: 94746
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA140FA120
Vishay Semiconductors
www.vishay.com
10 000
1000
100
10
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 25 °C
0.1
0.01
1
0
200
400
600
800
1000 1200
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
10
10
100
1000
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.75
D = 0.50
PDM
D = 0.33
D = 0.25
D = 0.20
0.1
t1
t2
Notes:
1. Duty factor D = t1/t2
DC
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
10
0.001
0.1
1
0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 20-Jul-12
Document Number: 94746
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA140FA120
Vishay Semiconductors
www.vishay.com
300
250
200
150
100
50
175
150
125
100
75
IF = 50 A
VR = 200 V
TJ = 125 °C
DC
Square wave (D = 0.50)
80 % rated VR applied
TJ = 25 °C
50
25
0
0
20
40
60
80
100
120
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
I
F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
500
3000
IF = 50 A
VR = 200 V
2500
2000
1500
1000
500
400
300
200
100
0
TJ = 125 °C
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
TJ = 25 °C
DC
0
100
0
20
40
60
80
100 120 140
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
40
IF = 50 A
VR = 200 V
TJ = 125 °C
30
20
10
0
TJ = 25 °C
100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Peak Recovery Current vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 20-Jul-12
Document Number: 94746
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA140FA120
Vishay Semiconductors
www.vishay.com
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 20-Jul-12
Document Number: 94746
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA140FA120
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS- HF
A
140
F
A
120
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Process designator (A = Electron irradiated)
Average current (140 = 140 A)
Circuit configuration (2 separate diodes, parallel pin-out)
Package indicator (SOT-227 standard isolated base)
Voltage rating (120 = 1200 V)
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT
CIRCUIT DRAWING
Lead Assignment
4
3
2
4
1
3
2
2 separate diodes,
parallel pin-out
F
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
www.vishay.com/doc?95425
Part marking information
Revision: 20-Jul-12
Document Number: 94746
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
Document Number: 91000
1
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