VS-HFA135NH40PBF [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 275A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1;
| 型号： | VS-HFA135NH40PBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 275A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-67, HALF PAK-1 超快软恢复二极管 快速软恢复二极管 局域网 光电二极管 |
| 文件： | 总7页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA135NH40PbF
Vishay Semiconductors
www.vishay.com
HEXFRED®
Ultrafast Soft Recovery Diode, 275 A
FEATURES
Lug terminal
anode
• Very low Qrr and trr
• Designed and qualified for industrial level
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Base
cathode
BENEFITS
HALF-PAK (D-67)
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRODUCT SUMMARY
IF (maximum)
275 A
400 V
VR
I
F(DC) at TC
Package
Circuit
138 A at 100 °C
HALF-PAK (D-67)
Single diode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
400
UNITS
Cathode to anode voltage
VR
V
TC = 25 °C
C = 100 °C
275
Continuous forward current
IF
T
138
A
Single pulse forward current
IFSM
EAS
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum TJ
TC = 25 °C
900
Non-repetitive avalanche energy
1.4
mJ
W
463
Maximum power dissipation
PD
TC = 100 °C
185
Operating junction and storage
temperature range
TJ, TStg
-55 to +150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode breakdown
voltage
VBR
IR = 100 μA
400
-
-
IF = 135 A
-
-
-
-
-
-
1.06
1.2
0.96
-
1.65
2.0
1.58
3
V
Maximum forward voltage
VFM
IF = 270 A
See fig. 1
IF = 135 A, TJ = 125 °C
TJ = 125 °C, VR = 400 V
VR = 200 V
Maximum reverse leakage current
Junction capacitance
IRM
CT
LS
See fig. 2
See fig. 3
mA
pF
280
6.0
380
-
Series inductance
From top of terminal hole to mounting plane
nH
Revision: 01-Apr-14
Document Number: 94050
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA135NH40PbF
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
77
MAX.
120
440
14
UNITS
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5
trr
ns
280
7.5
Peak recovery current
See fig. 6
IRRM
A
IF = 135 A
15
30
dIF/dt = 200 A/μs
150
2800
350
300
780
6300
-
VR = 200 V
Reverse recovery charge
See fig. 7
Qrr
nC
Peak rate of recovery current
See fig. 8
dI(rec)M/dt
A/μs
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
TJ,
TStg
-55 to +150
0.27
°C
temperature range
Maximum thermal resistance,
junction to case
DC operation
RthJC
RthCS
See fig. 4
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.05
30
g
Approximate weight
1.06
oz.
minimum
Mounting torque
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
maximum
N · m
(lbf · in)
minimum
Terminal torque
maximum
Case style
HALF-PAK module
1000
10
1
TJ = 150 °C
TJ = 125 °C
100
10
1
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.01
0.001
0.0001
TJ = 25 °C
100
200
300
400
0.2
0.7
1.2
1.7
2.2
2.7
3.2
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Revision: 01-Apr-14
Document Number: 94050
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA135NH40PbF
Vishay Semiconductors
www.vishay.com
10 000
1000
100
70
60
50
40
30
20
10
0
TJ = 125 °C
TJ = 25 °C
IF = 200 A
IF = 135 A
IF = 50 A
TJ = 25 °C
1
10
100
1000
100
1000
VR - Reverse Voltage (V)
dIF/dt (A/µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Typical Recovery Current vs. dIF/dt
160
140
120
100
6000
5000
4000
3000
2000
1000
0
TJ = 125 °C
TJ = 25 °C
IF = 200 A
IF = 135 A
IF = 50 A
DC
80
60
40
20
0
0
50
100
150
200
250
300
350
100
1000
IF(AV) - DC Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current
Fig. 7 - Typical Stored Charge vs. dIF/dt
450
10 000
1000
100
TJ = 125 °C
TJ = 25 °C
400
350
300
250
200
150
100
50
IF = 200 A
IF = 135 A
IF = 50 A
200 A
135 A
50 A
TJ = 125 °C
TJ = 25 °C
0
100
1000
100
1000
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/µs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 01-Apr-14
Document Number: 94050
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA135NH40PbF
Vishay Semiconductors
www.vishay.com
1
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
(thermal response)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 01-Apr-14
Document Number: 94050
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA135NH40PbF
Vishay Semiconductors
www.vishay.com
L = 100 µH
IL(PK)
High-speed
switch
D.U.T.
Freewheel
diode
Rg = 25 Ω
+
Current
monitor
Decay
time
Vd = 50 V
V(AVAL)
VR(RATED)
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code
VS- HFA 135
N
H
40 PbF
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Average current rating
N = Not isolated
H = HALF-PAK
Voltage rating (400 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 01-Apr-14
Document Number: 94050
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24ꢀ4 (0ꢀ96ꢂ
13 (0ꢀꢁ1ꢂ
17ꢀꢁ (0ꢀ69ꢂ
16ꢀꢁ (0ꢀ6ꢁꢂ
ꢁ (0ꢀ20ꢂ
4 (0ꢀ16ꢂ
30 0ꢀ0ꢁ
(1ꢀ2 0ꢀ002ꢂ
ꢁ (0ꢀ196ꢂ + 4ꢁ°
Ø 7ꢀ3 0ꢀ1 (0ꢀ29 0ꢀ0039ꢂ
21 (0ꢀ82ꢂ
20 (0ꢀ78ꢂ
- 0ꢀ1
Ø 4ꢀ3
0ꢀ0
- 0ꢀ004
0ꢀ000
(Ø 0ꢀ169
ꢂ
¼" - 20 UNC
40 MAXꢀ (1ꢀꢁ8ꢂ
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Revision: 02-Oct-12
Document Number: 91000
1
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