VS-HFA12PA120CPBF [VISHAY]
DIODE 6 A, SILICON, RECTIFIER DIODE, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | VS-HFA12PA120CPBF |
| 厂家： | 
VISHAY |
| 描述： | DIODE 6 A, SILICON, RECTIFIER DIODE, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 二极管 |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 6 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-247AC
Available
Base
common
cathode
BENEFITS
• Reduced RFI and EMI
2
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
1
Anode
3
VS-HFA12PA120C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. The VS-HFA12PA120C... has basic
ratings of 1200 V and 6 A per leg continuous current. In
addition to ultrafast recovery time, the HEXFRED® product
line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off”
during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA12PA120C... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters, converters, UPS
systems, and power factor correction circuits), motor drives,
and many other similar applications where high speed, high
efficiency is needed.
Anode
2
2
1
Common
cathode
PRODUCT SUMMARY
Package
TO-247AC
2 x 6 A
1200 V
2.4 V
IF(AV)
VR
VF at IF
t
rr typ.
26 ns
TJ max.
150 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
1200
V
per leg
per device
6
Maximum continuous forward current
IF
TC = 100 °C
12
A
Single pulse forward current
IFSM
IFRM
80
24
Maximum repetitive forward current
TC = 25 °C
62.5
Maximum power dissipation
PD
W
T
C = 100 °C
25
Operating junction and storage temperature range
TJ, TStg
-55 to +150
°C
Revision: 15-Jul-15
Document Number: 94597
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 6 A
-
-
-
-
-
-
-
2.7
3.5
3.0
3.9
2.8
5.0
500
14
V
Maximum forward voltage
VFM
IF = 12 A
IF = 6 A, TJ = 125 °C
2.4
VR = VR rated
0.26
110
9.0
Maximum reverse
leakage current
IRM
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
pF
Measured lead to lead 5 mm from package body
8.0
-
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
26
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
Reverse recovery time
trr1
53
80
ns
trr2
TJ = 125 °C
87
130
8.0
9.0
320
585
IRRM1
IRRM2
Qrr1
TJ = 25 °C
4.4
5.0
116
233
Peak recovery current
A
IF = 6 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Reverse recovery charge
nC
Qrr2
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
180
100
-
-
Peak rate of fall of recovery
current during tb
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
RthCS
-
-
-
-
-
2.0
80
-
Thermal resistance,
junction to ambient
Typical socket mount
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and greased
0.50
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC (JEDEC)
HFA12PA120C
Revision: 15-Jul-15
Document Number: 94597
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
www.vishay.com
Vishay Semiconductors
100
10
1
1000
T
= 150 °C
125 °C
100 °C
J
100
10
1
T
= 150°C
J
T
25 °C
= 125°C
J
0.1
0.01
T
=
25°C
J
0.1
0
200 400
600 800 1000 1200 1400
0
2
4
6
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Forward Voltage Drop-VFM (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
TJ = 150 °C
10
1
1
10
100
1000
10000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t 2
0.1
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Jul-15
Document Number: 94597
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
www.vishay.com
Vishay Semiconductors
110
100
90
80
70
60
50
40
30
20
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 6 A
IF = 4 A
800
600
400
200
0
IF = 6 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
100
1000
100
1000
dIF/dt - (A/µs)
dIF/dt - (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
25
20
15
10
5
10 000
1000
100
V
R = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 6 A
IF = 4 A
IF = 6 A
IF = 4 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
10
100
0
100
1000
1000
dIF/dt - (A/µs)
dIF/dt - (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 15-Jul-15
Document Number: 94597
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA12PA120CPbF, VS-HFA12PA120C-N3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS- HF
A
12
PA 120
C
PbF
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
-
-
-
-
Vishay Semiconductors product
HEXFRED® family
Electron irradiated
Current rating (12 = 12 A)
-
-
-
PA = TO-247AC
Voltage rating: (120 = 1200 V)
Circuit configuration
C = common cathode
-
Environmental digit:
8
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-HFA12PA120CPbF
VS-HFA12PA120C-N3
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95542
www.vishay.com/doc?95226
www.vishay.com/doc?95007
TO-247ACPbF
TO-247AC-N3
Part marking information
Revision: 15-Jul-15
Document Number: 94597
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
(4)
(5)
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
(7)
Revision: 20-Apr-17
Document Number: 95542
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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