VS-40MT120UHAPBF [VISHAY]
Insulated Gate Bipolar Transistor;
| 型号： | VS-40MT120UHAPBF |
| 厂家： | 
VISHAY |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总12页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40MT120UHAPbF, VS-40MT120UHTAPbF
www.vishay.com
Vishay Semiconductors
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
Available
Available
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery and low VF
• Al2O3 DBC
• Optional SMD thermistor (NTC)
• Very low stray inductance design for high speed operation
• UL approved file E78996
MTP
• Speed 8 kHz to 60 kHz
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 25 °C
Package
1200 V
3.36 V
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
80 A
MTP
Circuit
Half bridge
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
80
UNITS
Collector to emitter breakdown voltage
VCES
V
TC = 25 °C
Continuous collector current
IC
TC = 104 °C
TC = 105 °C
40
Pulsed collector current
ICM
ILM
160
160
21
A
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
IF
IFM
160
20
VGE
VISOL
V
RMS isolation voltage
Any terminal to case, t = 1 min
TC = 25 °C
2500
463
185
Maximum power dissipation (only IGBT)
PD
W
T
C = 100 °C
Revision: 30-Oct-13
Document Number: 94507
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 250 μA
1200
-
-
V
Temperature coefficient of
breakdown voltage
V(BR)CES/TJ
VGE = 0 V, IC = 3 mA (25 °C to 125 °C)
-
+ 1.1
-
V/°C
V
VGE = 15 V, IC = 40 A
-
-
3.36
4.53
3.88
5.35
-
3.59
4.91
4.10
5.68
6
VGE = 15 V, IC = 80 A
Collector to emitter saturation voltage
VCE(on)
VGE = 15 V, IC = 40 A, TJ = 150 °C
VGE = 15 V, IC = 80 A, TJ = 150 °C
VCE = VGE, IC = 500 μA
-
-
Gate threshold voltage
VGE(th)
4
Temperature coefficient of
threshold voltage
VGE(th)/TJ
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 12
-
mV/°C
Transconductance
gfe
VCE = 50 V, IC = 40 A, PW = 80 μs
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
-
-
-
-
35
-
-
S
250
1.0
10
μA
Zero gate voltage collector current
Gate to emitter leakage current
ICES
0.4
0.2
-
mA
nA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
IGES
VGE 20 V
=
250
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
399
MAX.
599
UNITS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Qg
-
-
-
-
-
-
-
-
-
-
-
-
IC = 40 A
VCC = 600 V
GE = 15 V
Qge
43
65
nC
V
Qgc
187
281
VCC = 600 V, IC = 40 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and diode
reverse recovery
Eon
1.14
1.35
2.49
1.60
1.62
3.22
5521
380
1.71
2.02
3.73
2.40
2.43
4.82
8282
570
Eoff
Etot
mJ
pF
VCC = 600 V, IC = 40 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and diode
reverse recovery
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
Eoff
Etot
Input capacitance
Cies
Coes
Cres
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
Output capacitance
Reverse transfer capacitance
171
257
TJ = 150 °C, IC = 160 A
Reverse bias safe operating area
Short circuit safe operating area
RBSOA
SCSOA
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
Fullsquare
-
TJ = 150 °C,
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
10
-
μs
Revision: 30-Oct-13
Document Number: 94507
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DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
2.98
3.90
3.08
4.29
3.12
574
120
43
MAX. UNITS
3.38
IC = 40 A
IC = 80 A
-
-
-
-
-
-
-
-
4.41
Diode forward voltage drop
VFM
IC = 40 A, TJ = 125 °C
IC = 80 A, TJ = 125 °C
IC = 40 A, TJ = 150 °C
3.39
4.72
3.42
861
180
65
V
Reverse recovery energy of the diode
Diode reverse recovery time
Erec
trr
μJ
ns
A
VGE = 15 V, Rg = 5 , L = 200 μH
CC = 600 V, IC = 40 A
V
TJ = 125 °C
Peak reverse recovery current
Irr
THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNITS
(1)
Resistance
R0
T0 = 25 °C
-
30
-
-
k
Sensitivity index of the
thermistor material
T0 = 25 °C
T1 = 85 °C
(1)(2)
-
4000
K
Notes
(1)
T0, T1 are thermistor´s temperatures
R
1
1
0
(2)
------
----- -----
–
= exp
, temperature in Kelvin
R
T
T
1
0
1
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
- 40
- 40
-
TYP.
MAX. UNITS
Operating junction temperature range
Storage temperature range
TJ
-
150
°C
125
TStg
-
IGBT
-
0.29
Junction to case
Diode
RthJC
RthCS
-
-
0.06
-
0.61
°C/W
mm
Case to sink per module
Clearance (1)
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
-
-
-
5.5
Shortest distance along external surface of the
insulating material between 2 terminals
Creepage (2)
8
-
-
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
Mounting torque to heatsink
Weight
3
10 ꢀ
66
Nm
g
Revision: 30-Oct-13
Document Number: 94507
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100
80
60
40
20
0
1000
100
10
1
10
100
1000
10 000
0
20 40 60 80 100 120 140 160
V
(V)
T
(°C)
CE
C
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 4 - Reverse BIAS SOA
TJ = 150 °C; VGE = 15 V
600
500
400
300
200
100
0
160
140
120
100
80
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
0
0
2
4
6
8
10
0
20 40 60 80 100 120 140 160
(°C)
V
(V)
T
CE
C
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 5 - Typical IGBT Output Characteristics
TJ = - 40 °C; tp = 80 μs
160
140
120
100
80
1000
100
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
10
1
10 μs
100 μs
60
10ms
DC
40
0.1
0.01
20
0
1
10
100
(V)
1000
10000
0
2
4
6
8
10
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
C = 25 °C; TJ 150 °C
Fig. 6 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 80 μs
T
Revision: 30-Oct-13
Document Number: 94507
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20
160
140
120
100
80
V
= 18V
I
= 80A
= 40A
= 20A
GE
CE
18
16
14
12
10
8
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
I
CE
I
CE
60
6
40
4
20
2
0
0
0
2
4
6
8
10
5
10
15
20
V
(V)
V
(V)
CE
GE
Fig. 7 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25 °C
20
18
16
14
12
10
8
120
I
= 80A
CE
-40°C
25°C
125°C
I
= 40A
= 20A
100
80
60
40
20
0
CE
I
CE
6
4
2
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
5
10
15
20
V
V
(V)
GE
F
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 μs
Fig. 11 - Typical VCE vs. VGE
TJ = 125 °C
20
350
300
250
200
150
100
50
I
= 80A
= 40A
= 20A
CE
18
16
14
12
10
8
T
T
= 25°C
J
J
I
CE
= 125°C
I
CE
6
4
2
0
0
5
10
15
20
0
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
TJ = - 40 °C
Fig. 12 - Typical Transfer Characteristics
CE = 50 V; tp = 10 μs
V
Revision: 30-Oct-13
Document Number: 94507
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4800
4200
3600
3000
2400
1800
1200
600
10 000
td
OFF
1000
td
t
t
ON
R
F
100
10
E
ON
E
OFF
0
0
10
20
30
40
50
60
0
20
40
60
80
100
R
( )
Ω
I
(A)
g
C
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 250 μH; VCE = 400 V
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 250 μH; VCE = 600 V
ICE = 40 A; VGE = 15 V
Rg = 5 ; VGE = 15 V
50
40
30
20
10
0
1000
100
10
R
5.0
Ω
=
g
td
OFF
R
10
Ω
=
g
R
30
50
=
=
Ω
g
t
R
Ω
R
g
td
ON
t
F
0
20
40
60
80
100
10
20
30
40
(A)
50
60
70
I
(A)
I
C
F
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 250 μH; VCE = 400 V
Rg = 5 ; VGE = 15 V
Fig. 17 - Typical Diode Irr vs. IF
TJ = 125 °C
6000
5000
4000
3000
2000
1000
50
40
30
20
10
E
ON
E
OFF
0
10
20
30
40
50
60
0
10
20
30
40
50
60
R
(
Ω)
g
R
( )
Ω
g
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 150 °C; L = 250 μH; VCE = 600 V
ICE = 40 A; VGE = 15 V
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 125 °C; IF = 40 A
Revision: 30-Oct-13
Document Number: 94507
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50
45
40
35
30
25
20
15
10
10000
Cies
1000
Coes
100
Cres
10
0
20
40
60
(V)
80
100
0
200
400
600
800
1000
V
dI /dt (A/μs)
CE
F
Fig. 19 - Typical Diode Irr vs. dIF/dt
CC = 600 V; VGE = 15 V; ICE = 40 A; TJ = 125 °C
Fig. 21 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
8
60A
40A
600V
50
Ω
20A
30
Ω
6
10
Ω
5.0
Ω
4
2
0
0
100
Q
200
300
400
500
0
200
400
600
800 1000 1200
, Total Gate Charge (nC)
dI /dt (A/μs)
G
F
Fig. 20 - Typical Diode Qrr vs. dIF/dt
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
VCC = 600 V; VGE = 15 V; TJ = 125 °C
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.01
J τJ
Cτ
0.043 0.001214
1 τ1
2τ2
3τ3
0.001
0.105 0.044929
0.123 1.1977
Ci= τi/Ri
Notes:
0.0001
SINGLE PULSE
( THERMAL RESPONSE)
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Revision: 30-Oct-13
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1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.05
0.02
0.01
τ
J τJ
τ
0.024 0.00008
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.549 0.000098
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE)
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
, Rectangular Pulse Duration (sec)
0.001
0.01
t
1
Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
3, 4
2
T
11
12
R
5, 6
1
Thermistor
option only for
40MT120UHTAPbF
9
10
7, 8
Fig. 25 - Electrical diagram
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Driver
L
VCC
+
-
D
C
+
-
D.U.T.
900 V
0
1 K
D.U.T.
Fig. CT.1 - Gate Charge Circuit (Turn-Off)
Fig. CT.3 - S.C. SOA Circuit
L
Diode clamp/
D.U.T.
L
+
-
- 5 V
80 V
+
-
D.U.T.
+
-
D.U.T./
driver
1000 V
Rg
VCC
Rg
Fig. CT.2 - RBSOA Circuit
Fig. CT.4 - Switching Loss Circuit
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ORDERING INFORMATION TABLE
Device code
VS- 40
MT 120
U
H
T
A
PbF
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (40 = 40 A)
Essential part number
1
2
3
4
5
6
7
Voltage code (120 = 1200 V)
Speed/type (U = Ultrafast IGBT)
Circuit configuration (H = Half bridge)
Special option:
None = No special option
T = Thermistor
-
-
A = Al2O3 DBC substrate
PbF = Lead (Pb)-free
8
9
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95175
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Outline Dimensions
Vishay Semiconductors
MTP
DIMENSIONS in millimeters
Ø 5
Ø 1.1
31.8
33
2
1
8 7
6 5
1ꢀ
4 3
13
12
11
9
1.8
1.2 ꢀ.1
7.2 ꢀ.1
5.7 ꢀ.1
7.8 ꢀ.1
R2.6 (x 3)
3
ꢀ.1
5.4 ꢀ.1
8.7 ꢀ.1
6
ꢀ.1
R5.8 (x 2)
8.5 ꢀ.1
3
ꢀ.1
39.5 ꢀ.1
44.5
48.7
1.3
63.5 ꢀ.25
Note
•
Unused terminals are not assembled in the package
Document Number: 95175
Revision: 18-Mar-08
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1
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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