VS-40TPS08PBF [VISHAY]
High Voltage Phase Control Thyristor, 40 A; 高电压相位控制晶闸管， 40 A
| 型号： | VS-40TPS08PBF |
| 厂家： | 
VISHAY |
| 描述： | High Voltage Phase Control Thyristor, 40 A |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage Phase Control Thyristor, 40 A
FEATURES
2
• Designed
JEDEC-JESD47
• Low IGT parts available
and
qualified
according
to
(A)
• Compliant to RoHS Directive 2002/95/EC
• 125 °C max. operating junction temperature
• Halogen-free according to IEC 61249-2-21
definition (-M3 only)
1 (K)
(G) 3
TO-247AC
APPLICATIONS
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
TO-247AC
Single SCR
35 A
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
V
DRM/VRRM
800 V, 1200 V
1.45 V
DESCRIPTION
VTM
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
IGT
150 mA
TJ
- 40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
35
UNITS
IT(AV)
Sinusoidal waveform
A
IRMS
55
VRRM/VDRM
ITSM
800/1200
500
V
A
VT
40 A, TJ = 25 °C
1.45
V
dV/dt
dI/dt
1000
V/μs
A/μs
°C
100
TJ
- 40 to 125
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM
VRSM, MAXIMUM
I
RRM/IDRM
REPETITIVE PEAK AND NON-REPETITIVEPEAK
PART NUMBER
AT 125 °C
mA
OFF-STATE VOLTAGE
V
REVERSE VOLTAGE
V
VS-40TPS08APbF, VS-40TPS08A-M3
VS-40TPS08PbF, VS-40TPS08-M3
VS-40TPS12APbF, VS-40TPS12A-M3
VS-40TPS12PbF, VS-40TPS12-M3
800
1200
800
900
1300
900
10
1200
1300
Revision: 10-Nov-11
Document Number: 94388
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average on-state current
IT(AV)
TC = 79 °C, 180° conduction half sine wave
35
Maximum continuous RMS
on-state current as AC switch
IT(RMS)
55
A
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
500
600
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Initial TJ =
TJ maximum
1250
A2s
Maximum I2t for fusing
I2t
1760
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
12 500
1.02
1.23
9.74
7.50
1.85
100
A2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
V
TJ = 125 °C
m
rt2
VTM
dI/dt
IH
110 A, TJ = 25 °C
TJ = 25 °C
V
A/μs
150
Maximum latching current
IL
300
mA
TJ = 25 °C
0.5
Maximum reverse and direct leakage current IRRM/ DRM
I
VR = Rated VRRM/VDRM
TJ = 125 °C
10
Maximum rate of rise of off-state voltage
40TPS08
500
dV/dt
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
V/μs
Maximum rate of rise of off-state voltage
40TPS12
1000
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
PG(AV)
IGM
2.5
2.5
10
A
V
- VGM
TJ = - 40 °C
4.0
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
Maximum required DC gate voltage to trigger
VGT
TJ = 25 °C
V
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
Maximum required DC gate current to trigger
IGT
mA
TJ = 125 °C
TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF
TJ = 125 °C, VDRM = Rated value
40
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
0.25
6
V
mA
Revision: 10-Nov-11
Document Number: 94388
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
0.6
40
DC operation
Maximum thermal resistance,
junction to ambient
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
Mounting torque
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
12 (10)
40TPS08A
40TPS12A
40TPS08
40TPS12
Marking device
Case style TO-247AC
130
120
110
100
90
60
40TPS.. Series
thJC
180°
R
(DC) = 0.6 °C/W
120°
50
90°
60°
30°
40
RMS Lim it
Conduction Angle
30
20
10
0
30°
60°
90°
20
Conduction Angle
40TPS.. Series
120°
180°
80
T = 125° C
J
70
0
10
30
40
0
5
10 15 20 25 30 35 40
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
120
110
100
90
80
40TPS. . Se rie s
DC
180°
120°
90°
R
(DC) = 0.6 °C/W
thJC
70
60
50
40
30
20
10
0
60°
30°
Conduction Period
RMS Lim it
30°
10
60°
Conduction Period
40TPS.. Se ri e s
90°
120°
30
180°
80
T = 125°C
J
DC
50
70
0
10
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
20
30
40
50
60
0
20
40
60
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 10-Nov-11
Document Number: 94388
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
600
550
500
450
400
350
300
250
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
550
500
450
400
350
300
250
Initial T = 125°C
J
Initial T = 125°C
J
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
40TPS.. Series
4 0 TPS. . Se rie s
0.01
0.1
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
100
10
T = 25° C
J
T = 125°C
J
40TPS. . Se rie s
1.5
1
0.5
1
2
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100 W, tp = 500µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(2)
(3)
(1)
(4)
VGD
IGD
Frequency Limited by PG(AV)
40TPS..A Series
0.1
0.001
0.01
0.1
1
10
100
1000
InstantaneousGateCurrent(A)
Fig. 8 - Gate Characteristics
Revision: 10-Nov-11
Document Number: 94388
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
1
St e a d y St a t e V a l u e
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Si n g l e Pu lse
40TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 40
T
P
S
12
A
PbF
2
3
4
5
6
7
8
1
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (40 = 40 A)
Circuit configuration:
T = Thyristor
4
5
-
-
Package:
P = TO-247
Type of silicon:
S = Standard recovery rectifier
Voltage ratings
08 = 800 V
12 = 1200 V
6
7
-
-
A = Low Igt selection 40 mA maximum
None = Standard Igt selection
8
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
Revision: 10-Nov-11
Document Number: 94388
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-40TPS08APbF
VS-40TPS08A-M3
VS-40TPS08PbF
VS-40TPS08-M3
VS-40TPS12APbF
VS-40TPS12A-M3
VS-40TPS12PbF
VS-40TPS12-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
25
25
25
25
25
500
500
500
500
500
500
500
500
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
TO-247AC PbF
TO-247AC-M3
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Part marking information
Revision: 10-Nov-11
Document Number: 94388
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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