VS-40TPS08-M3 [VISHAY]
Silicon Controlled Rectifier, 55 A, 800 V, SCR, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | VS-40TPS08-M3 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 55 A, 800 V, SCR, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 局域网 栅 栅极 |
| 文件： | 总8页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
• Designed and qualified according to
JEDEC®-JESD 47
(A)
• Low IGT parts available
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1 (K)
(G) 3
Available
TO-247AC
APPLICATIONS
PRIMARY CHARACTERISTICS
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
IT(AV)
35 A
VDRM/VRRM
800 V, 1200 V
1.45 V
VTM
DESCRIPTION
IGT
TJ
150 mA
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
-40 °C to +125 °C
TO-247AC
Single SCR
Package
Circuit configuration
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
35
UNITS
IT(AV)
Sinusoidal waveform
A
IRMS
55
VRRM/VDRM
ITSM
800/1200
600
V
A
VT
40 A, TJ = 25 °C
1.45
V
dV/dt
dI/dt
1000
V/μs
A/μs
°C
100
TJ
-40 to +125
VOLTAGE RATINGS
VRRM/VDRM
,
VRSM,
I
RRM/IDRM
MAXIMUM REPETITIVE PEAK
MAXIMUM NON-REPETITIVE PEAK
PART NUMBER
AT 125 °C
mA
AND OFF-STATE VOLTAGE
V
REVERSE VOLTAGE
V
VS-40TPS08APbF, VS-40TPS08A-M3
VS-40TPS08PbF, VS-40TPS08-M3
VS-40TPS12APbF, VS-40TPS12A-M3
VS-40TPS12PbF, VS-40TPS12-M3
800
800
900
900
10
1200
1200
1300
1300
Revision: 14-Sep-17
Document Number: 94388
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average on-state current
IT(AV)
TC = 79 °C, 180° conduction half sine wave
35
Maximum continuous RMS
on-state current as AC switch
IT(RMS)
55
A
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
500
600
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Initial
TJ = TJ max.
1250
A2s
Maximum I2t for fusing
I2t
1760
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
17 600
1.02
1.23
9.74
7.50
1.85
100
A2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
V
TJ = 125 °C
m
rt2
VTM
dI/dt
IH
110 A, TJ = 25 °C
TJ = 25 °C
V
A/μs
Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = 25 °C
200
Maximum latching current
IL
300
mA
0.5
Maximum reverse and direct leakage current IRRM/ DRM
I
VR = Rated VRRM/VDRM
TJ = 125 °C
10
Maximum rate of rise of off-state voltage
40TPS12A
500
dV/dt
TJ = TJ maximum, linear to 80 % VDRM, Rg- k = 100
V/μs
Maximum rate of rise of off-state voltage
40TPS12
1000
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
PG(AV)
IGM
2.5
2.5
10
A
V
- VGM
TJ = - 40 °C
4.0
2.5
1.7
270
150
80
Anode supply = 6 V
resistive load
Maximum required DC gate voltage to trigger
VGT
TJ = 25 °C
V
TJ = 125 °C
TJ = - 40 °C
Anode supply = 6 V
resistive load
TJ = 25 °C
Maximum required DC gate current to trigger
IGT
mA
TJ = 125 °C
TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF
40
Maximum DC gate voltage not to trigger
for 40TPS12
VGD
IGD
VGD
IGD
0.25
6
V
TJ = 125 °C, VDRM = Rated value
TJ = 125 °C, VDRM = Rated value
Maximum DC gate current not to trigger
for 40TPS12
mA
V
Maximum DC gate voltage not to trigger
for 40TPS12A
0.15
1
Maximum DC gate current not to trigger
for 40TPS12A
mA
Revision: 14-Sep-17
Document Number: 94388
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-40 to +125
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
0.6
40
DC operation
Maximum thermal resistance,
junction to ambient
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(lbf · in)
Mounting torque
Marking device
12 (10)
40TPS08A
40TPS12A
40TPS08
40TPS12
Case style TO-247AC
130
120
110
100
90
130
120
110
40TPS.. Series
thJC
40TPS.. Series
(DC) = 0.6 °C/W
R
(DC) = 0.6 °C/W
R
thJC
Conduction Angle
Conduction Period
100
30°
60°
30°
90°
20
60°
90
80
70
90°
120°
180°
120°
30
180°
80
DC
50
70
0
0
10
20
40
60
10
30
40
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Revision: 14-Sep-17
Document Number: 94388
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
60
50
40
30
20
10
0
550
At Any Rated Load Condition And With
180°
Rated V
Applied Following Surge.
RRM
120°
90°
60°
30°
Initial T = 125°C
J
500
450
400
350
300
250
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
RMS Lim it
Conduction Angle
40TPS.. Series
T = 125° C
4 0 TPS. . Se rie s
J
0
5
10 15 20 25 30 35 40
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
80
600
Maximum Non Repetitive Surge Current
DC
180°
120°
90°
Versus Pulse Train Duration. Control
70
60
50
40
30
20
10
0
550
500
450
400
350
300
250
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
No Voltage Reapplied
60°
Ra t e d V
Re a p p lie d
RRM
30°
RMS Lim it
Conduction Period
40TPS.. Se ri e s
T = 125°C
40TPS.. Series
J
0
10
20
30
40
50
60
0.01
0.1
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
100
10
T = 25° C
J
T = 125°C
J
40TPS. . Se rie s
1.5
1
0.5
1
2
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Revision: 14-Sep-17
Document Number: 94388
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 μs
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 2.5 ms
(4) PGM = 10 W, tp = 5 ms
tr = 0.5 μs, tp ≥ 6 μs
a)
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
10
1
b)
(4)
(3)
(2)
(1)
VGD
IGD
40TPS..Series
Frequency limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
100
Rectangular gate pulse
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 2.5 ms
(4) PGM = 10 W, tp = 5 ms
a) Recommended load line for rated dI/dt: 20 V, 30 Ω
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
10
1
(4)
(3)
(2)
(1)
b)
a)
1
VGD
Frequency limited by PG(AV)
IGD
0.1
0.0001
0.001
0.01
0.1
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics, 40TPS..A Series
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
40TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristics
Revision: 14-Sep-17
Document Number: 94388
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 40
T
P
S
12
A
PbF
2
3
4
5
6
7
8
1
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (40 = 40 A)
Circuit configuration:
T = Thyristor
4
5
-
-
Package:
P = TO-247
Type of silicon:
S = standard recovery rectifier
Voltage ratings
08 = 800 V
12 = 1200 V
6
7
-
-
A = low Igt selection 40 mA maximum
None = standard Igt selection
8
-
Environmental digit:
PbF = lead (Pb)-free and RoHS compliant
-M3 = halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40TPS08APbF
VS-40TPS08A-M3
VS-40TPS08PbF
VS-40TPS08-M3
VS-40TPS12APbF
VS-40TPS12A-M3
VS-40TPS12PbF
VS-40TPS12-M3
25
500
500
500
500
500
500
500
500
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
25
25
25
25
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95542
TO-247AC PbF
TO-247AC-M3
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Part marking information
Revision: 14-Sep-17
Document Number: 94388
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
(4)
(5)
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
(7)
Revision: 20-Apr-17
Document Number: 95542
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-40TPS08A-M3
Silicon Controlled Rectifier, 55 A, 800 V, SCR, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
VISHAY
VS-40TPS12-M3
Silicon Controlled Rectifier, 55 A, 1200 V, SCR, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
VISHAY
VS-40TPS12APBF
Silicon Controlled Rectifier, 55 A, 1200 V, SCR, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
VISHAY
©2020 ICPDF网 联系我们和版权申明