VS-40MT160P.PBF [VISHAY]
Three Phase Bridge (Power Modules), 45 A to 100 A;
| 型号： | VS-40MT160P.PBF |
| 厂家： | 
VISHAY |
| 描述： | Three Phase Bridge (Power Modules), 45 A to 100 A |
| 文件： | 总9页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
Three Phase Bridge (Power Modules), 45 A to 100 A
FEATURES
• Low VF
• Low profile package
• Direct mounting to heatsink
• Flat pin/round pin versions with PCB solderable
terminals
• Low junction to case thermal resistance
• 3500 VRMS insulation voltage
• UL approved file E78996
vie
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MT...PA
MT...PB
APPLICATIONS
• Power conversion machines
• Welding
• UPS
• SMPS
• Motor drives
• General purpose and heavy duty application
PRODUCT SUMMARY
IO
45 A to 100 A
1600 V
VRRM
DESCRIPTION
Package
Circuit
MT...PA, MT...PB
Three phase bridge
A range of extremely compact three-phase rectifier bridges
offering efficient and reliable operation. The low profile
package has been specifically conceived to maximize space
saving and optimize the electrical layout of the application
specific power supplies.
MAJOR RATINGS AND CHARACTERISTICS
VALUES
40MT
VALUES
70MT
VALUES
100MT
SYMBOL
CHARACTERISTICS
UNITS
45
75
100
80
A
IO
TC
100
270
280
365
325
3650
80
°C
50 Hz
60 Hz
50 Hz
60 Hz
380
450
IFSM
I2t
A
398
470
724
1013
920
A2s
660
I2√t
VRRM
TStg
TJ
7240
1600
-40 to 125
-40 to 150
10 130
A2√s
V
Range
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM
VOLTAGE CODE
REVERSE VOLTAGE
V
V
RSM, MAXIMUM
IRRM MAXIMUM AT
TJ = 150 °C
mA
REPETITIVE PEAK
REVERSE VOLTAGE
V
TYPE NUMBER
NON-REPETITIVE PEAK
V
VS-40MT160P, VS-70MT160P,
VS-100MT160P
160
1600
1700
5
Revision: 16-Jul-14
Document Number: 94538
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES VALUES VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
40MT
70MT
100MT
Maximum DC output
current at case
temperature
45
75
100
A
IO
120° rect. to conduction angle
100
80
80
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
270
280
225
240
365
325
253
240
3650
0.78
14.8
380
398
320
335
724
660
512
467
7240
0.82
9.5
450
470
No voltage
reapplied
Maximum peak, one cycle
forward, non-repetitive on
state surge current
IFSM
Α
380
100 % VRRM
reapplied
400
Initial
TJ = TJ maximum
1013
920
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
600
100 % VRRM
reapplied
665
Maximum I2√t for fusing
Value of threshold voltage
Slope resistance
I2√t
VF(TO)
rt
t = 0.1 ms to 10 ms, no voltage reapplied
10 130
0.75
8.1
A2√s
V
TJ maximum
mΩ
Maximum forward voltage
drop
TJ = 25 °C; tp = 400 μs single junction
(40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A)
VFM
1.45
1.45
1.51
V
INSULATION TABLE
PARAMETER
SYMBOL
TEST CONDITIONS
40MT
70MT
100MT
UNITS
RMS insulation voltage
VINS
TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
40MT
70MT
100MT
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 150
°C
Maximum storage
temperature range
TStg
- 40 to 125
DC operation per module
0.27
1.6
0.23
1.38
0.29
1.76
0.19
1.14
0.22
1.29
DC operation per junction
Maximum thermal resistance,
junction to case
RthJC
120° rect. condunction angle per module
120° rect. condunction angle per junction
0.38
2.25
K/W
Mounting surface smooth, flat and greased
Heatsinkcompoundthermalconductiv i ty
= 0.42 W/mK
Maximum thermal resistance,case to
heatsink per module
RthCS
0.1
Mounting torque to heatsink
10 %
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads
4
Nm
g
Approximate weight
65
CLEARANCE AND CREEPAGE DISTANCES
PARAMETER
TEST CONDITIONS
MT...PA
MT...PB
UNITS
External shortest distances in air between terminals
which are not internally short circuited together
Clearance
10.9
12.3
mm
Shortest distance along external surface of the insulating material
between terminals which are not internally short circuited together
Creepage distance
Revision: 16-Jul-14
Document Number: 94538
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
160
150
140
130
120
110
100
90
250
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
40MT...P
(DC) = 0.27 K/W
R
thJC
Per Module
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
200
150
100
50
120˚
(Rect)
40MT...P
Per Junction
80
0
10
20
30
40
50
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Total Output Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
300
1000
100
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Tj = 25˚C
250
200
150
100
50
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
Tj = 150˚C
40MT...P
Per Junction
40MT...P
1
0.01
0.1
1
0
1
2
3
4
5
6
Pulse Train Duration(s)
Instantaneous On-state Voltage (V)
Fig. 2 - On-State Voltage Drop Chracteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
250
40MT...P
RthSA = 0.1 K/W - Delta R
0.2 K/W
0.3 K/W
200
150
100
50
Tj = 150˚C
0.5 K/W
0.4 K/W
120˚
(Rect)
1 K/W
0
60
30
60
90
120
150
0
10
20
30
40
50
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
Revision: 16-Jul-14
Document Number: 94538
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
160
150
140
130
120
110
100
90
350
At Any Rated Load Condition And With
70MT...P
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
R
(DC) = 0.23 K/W
thJC
300
250
200
150
100
Per Module
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
120˚
(Rect)
80
70MT...P
Per Junction
70
60
0
10 20 30 40 50 60 70 80
Total Output Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Current Rating Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
400
1000
100
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
350
300
250
200
150
100
50
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
Tj = 25˚C
Tj = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
70MT...P
Per Junction
70MT...P
1
0.01
0.1
1
0
1
2
3
4
5
Pulse Train Duration(s)
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
300
RthS
A = 0.1 K/W -
70MT...P
0.2
250
200
150
100
50
Tj = 150˚C
K/W
0.3 K/W
Delta R
120˚
(Rect)
1 K/W
0
30
60
90
120
150
0
20
40
60
80
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
Revision: 16-Jul-14
Document Number: 94538
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
140
120
100
80
400
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
100MT...P
(DC) = 0.19 K/W
R
thJC
Initial Tj = 125˚C
350
300
250
200
150
100
Per Module
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
120˚
(Rect)
60
100MT...P
Per Junction
40
40 50 60 70 80 90 100 110 120 130
Total Output Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Current Rating Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
1000
500
Maximum Non Repetitive Surge Current
100MT...P
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 125˚C
450
400
350
300
250
200
150
100
50
No Voltage Reapplied
Rated V rrm Reapplied
100
10
1
Tj = 150˚C
Tj = 25˚C
100MT...P
Per Junction
0
0.5
1
1.5
2
2.5
3
3.5
4
0.01
0.1
1
10
Instantaneous On-state Voltage (V)
Pulse Train Duration(s)
Fig. 12 - On-State Voltage Drop Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
500
RthSA = 0.025 K/W
100MT...P
0.05 K
0.1 K/W
Tj = 150˚C
400
300
200
100
0
- Delta R
0.2 K/W
0.3 K/
W
120˚
0.5 K/W
(Rect)
1 K
/
W
0
100
30
60
90
120
150
0
20
40
60
80
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)
Revision: 16-Jul-14
Document Number: 94538
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
Vishay Semiconductors
10
Steady State Value
RthJC per junction =
1.6 K/W (40MT...P)
1.38 K/W (70MT...P
1
1.14 K/W (100MT...P)
40MT...P
DC Operation)
70MT...P
100MT...P
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
10
0
MT 160
P
B
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
4 = 45 A
7 = 75 A
-
Current rating code
2
10 = 100 A
3
4
5
-
-
-
Circuit configuration code: 0 = 3-Phase rectifier bridge
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
A = Flat pins
6
7
-
-
Pinout code
B = Round pins
Lead (Pb)-free
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95244
Revision: 16-Jul-14
Document Number: 94538
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTP Flat and Round Pin
DIMENSIONS FOR MTP WITH FLAT PIN in millimeters
7
ꢁ4
Electrical
circuit
2
3, 4
4
5
6
7
2.5
ꢁ, 2
44.5
7
7
7
7.4
7
22
Ø 5.2 (x 2)
ꢀ.5
5.5
ꢀ.5
4
3
2
ꢁ
7
5.5
5
6
ꢁ4
ꢁ4
Ø 5
ꢁꢀ.5
39.5
48.7
ꢁ6
ꢁ2 ꢀ.5
ꢁ.3
63.5 ꢀ.25
Document Number: 95244
Revision: 07-Nov-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
MTP Flat and Round Pin
DIMENSIONS FOR MTP WITH ROUND PIN in millimeters
ꢁ4
Ø 5
4
Electrical
circuit
7
7
3, 4
2.5
5
6
7
ꢁ, 2
44.5
7
7
7
Ø ꢁ.ꢁ
7
Ø 5
Ø 5.2 (x 2)
4
4
5
3
2
ꢁ
7
ꢁ6
6
ꢁ4
ꢁ4
7.4
3ꢁ.8
39.5
48.7
ꢁ.3
63.5 ꢀ.25
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 95244
Revision: 07-Nov-07
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
Document Number: 91000
1
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