首页 |元器件品牌

SUM70N03-09CP [VISHAY]

N-Channel 30-V (D-S), 175-LC MOSFET; N沟道30 V（D -S）， 175 -LC的MOSFET
SUM70N03-09CP
型号： SUM70N03-09CP
厂家： VISHAY    VISHAY
描述：

N-Channel 30-V (D-S), 175-LC MOSFET
N沟道30 V（D -S）， 175 -LC的MOSFET

晶体 晶体管 功率场效应晶体管
文件： 总4页 (文件大小：63K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SUM70N03-09CP  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D Optimized for High- or Low-Side  
D New Low Thermal Resistance Package  
D 100% Rg Tested  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.0095 @ V = 20 V  
70  
58  
GS  
30  
0.014 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Synchronous Rectifiers  
D
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
S
Ordering Information: SUM70N03-09CP  
SUM70N03-09CP-E3 (Lead Free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
T
= 25_C  
70  
40  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
= 125_C  
C
A
Pulsed Drain Current  
Avalanche Current  
I
100  
35  
DM  
I
AR  
a
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
61  
mJ  
93  
T
T
= 25_C  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient  
Junction-to-Case  
PCB Mount  
R
40  
thJA  
thJC  
_
C/W  
R
1.6  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 71943  
S-32523—Rev. D, 08-Dec-03  
www.vishay.com  
1
SUM70N03-09CP  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
V
= 0 V, I = 250 mA  
D
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
30  
GS  
(BR)DSS  
V
V
V
DS  
= V , I = 250 mA  
1.0  
3.0  
"100  
1
GS(th)  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
nA  
GSS  
V
= 30 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 30 V, V = 0 V, T = 125_C  
250  
DS  
GS  
J
b
On-State Drain Current  
I
V
= 5 V, V = 10 V  
100  
20  
A
D(on)  
DS  
GS  
V
= 10 V, I = 20 A  
0.0076  
0.0115  
0.0095  
0.015  
0.014  
GS  
D
b
V
= 10 V, I = 20 A, T = 175_C  
Drain-Source On-State Resistance  
r
W
GS  
D
J
DS(on)  
V
= 4.5 V, I = 20 A  
D
GS  
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 20 A  
S
DS  
D
Dynamica  
Input Capacitance  
C
C
2200  
410  
180  
1.5  
31  
iss  
V
GS  
= 0 V, V = 25 V, f = 1 MHz  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
pF  
W
oss  
C
rss  
R
0.5  
2.1  
45  
g
c
Total Gate Charge  
Q
g
c
Gate-Source Charge  
Q
Q
7.5  
5.0  
9
V
= 15 V, V = 10 V, I = 50 A  
nC  
gs  
gd  
DS  
GS  
D
c
Gate-Drain Charge  
c
Turn-On Delay Time  
t
15  
120  
35  
d(on)  
c
Rise Time  
t
80  
r
V
DD  
= 15 V, R = 0.3 W  
L
ns  
c
I
^ 50 A, V  
= 10 V, R = 2.5 W  
Turn-Off Delay Time  
t
22  
D
GEN g  
d(off)  
c
Fall Time  
t
f
8
12  
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Pulsed Current  
I
100  
1.5  
70  
A
V
SM  
b
Diode Forward Voltage  
V
SD  
I
F
= 50 A, V = 0 V  
1.2  
35  
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 50 A, di/dt = 100 A/ms  
ns  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
c. Independent of operating temperature.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
120  
120  
90  
60  
30  
0
V
GS  
= 10 thru 6 V  
5 V  
90  
60  
30  
0
4 V  
T
= 125_C  
C
3 V  
2 V  
25_C  
−55_C  
0
2
4
6
8
10  
0
1
2
3
4
5
6
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 71943  
S-32523—Rev. D, 08-Dec-03  
www.vishay.com  
2
SUM70N03-09CP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Transconductance  
On-Resistance vs. Drain Current  
100  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
80  
T
= −55_C  
C
25_C  
60  
40  
20  
0
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
0
10  
20  
30  
40  
50  
0
20  
40  
60  
80  
100  
I
D
− Drain Current (A)  
I
D
− Drain Current (A)  
Capacitance  
Gate Charge  
3000  
2500  
2000  
1500  
1000  
500  
10  
8
C
iss  
V
D
= 15 V  
DS  
I
= 30 A  
6
4
C
oss  
2
C
rss  
0
0
0
5
10  
15  
20  
25  
30  
0
6
12  
Q − Total Gate Charge (nC)  
g
18  
24  
30  
V
DS  
− Drain-to-Source Voltage (V)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
100  
10  
1
V
GS  
= 10 V  
I
D
= 30 A  
T = 150_C  
T = 25_C  
J
J
−50 −25  
0
25  
50  
75 100 125 150 175  
0
0.3  
0.6  
0.9  
1.2  
1.5  
T
− Junction Temperature (_C)  
V
SD  
− Source-to-Drain Voltage (V)  
J
Document Number: 71943  
S-32523—Rev. D, 08-Dec-03  
www.vishay.com  
3
SUM70N03-09CP  
Vishay Siliconix  
THERMAL RATINGS  
Maximum Drain Current vs.  
Ambiemt Temperature  
Safe Operating Area  
1000  
90  
75  
60  
45  
30  
15  
0
Limited  
by r  
DS(on)  
10, 100 ms  
100  
10  
1 ms  
10 ms  
100 ms  
1
1 s  
10 s  
T
= 25_C  
100 s  
dc  
A
0.1  
Single Pulse  
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
− Drain-to-Source Voltage (V)  
T
A
− Ambient Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
Square Wave Pulse Duration (sec)  
Document Number: 71943  
S-32523—Rev. D, 08-Dec-03  
www.vishay.com  
4

相关型号：

SUM70N03-09CP-E3

 N-Channel 30-V (D-S), 175-LC MOSFET
VISHAY

SUM70N04-07L

 N-Channel 40-V (D-S) 175C MOSFET
VISHAY

SUM70N04-07L-E3

 N-Channel 40-V (D-S) 175 Celsius MOSFET
VISHAY

SUM70N04-07L_08

 N-Channel 40-V (D-S) 175 Celsius MOSFET
VISHAY

SUM70N06-11

 N-Channel 60-V (D-S), 175 C MOSFET
VISHAY

SUM70N06-11-E3

 Power Field-Effect Transistor, 70A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2
VISHAY

SUM70UF

 400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER
SSDI

SUM70UFS

 Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SSDI

SUM70UFSMS

 400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER
SSDI

SUM70UFSMSTX

 Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SSDI

SUM70UFSMSTXV

 Rectifier Diode, 1 Element, 0.4A, Silicon, HERMETIC SEALED PACKAGE-2
SSDI

SUM75N06-09L

 N-Channel 60-V (D-S), 175 °C MOSFET
VISHAY
©2020 ICPDF网 联系我们和版权申明