SUM70N04-07L_08 [VISHAY]
N-Channel 40-V (D-S) 175 Celsius MOSFET; N通道40 -V （D -S ） 175摄氏度MOSFET
| 型号： | SUM70N04-07L_08 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 40-V (D-S) 175 Celsius MOSFET |
| 文件： | 总8页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM70N04-07L
Vishay Siliconix
N-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Available
175 °C Junction Temperature
Low Threshold
70a
67
0.0074 at VGS = 10 V
0.011 at VGS = 4.5 V
RoHS*
40
COMPLIANT
APPLICATIONS
•
Motor Control
D
TO-263
G
G
D S
S
Top View
Ordering Information: SUM70N04-07L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
40
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
70a
47
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
TC = 125 °C
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
120
40
Repetitive Avalanche Energyb
EAR
L = 0.1 mH
TC = 25 °C
80
mJ
W
100c
3.75
Maximum Power Dissipationb
PD
T
A = 25 °Cd
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mountd
RthJA
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case
1.4
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72345
S-80274-Rev. B, 11-Feb-08
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1
SUM70N04-07L
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
40
1
V
Gate-Threshold Voltage
Gate-Body Leakage
3
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 32 V, VGS = 0 V
DS = 32 V, VGS = 0 V, TJ = 125 °C
DS = 32 V, VGS = 0 V, TJ = 175 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
250
µA
A
ID(on)
100
20
VGS = 10 V, ID = 30 A
0.006
0.0074
0.011
0.012
0.015
V
GS = 4.5 V, ID = 10 A
0.0085
Drain-Source On-State Resistancea
rDS(on)
Ω
V
V
GS = 10 V, ID = 30 A, TJ = 125 °C
GS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Forward Transconductancea
Dynamicb
gfs
S
Ciss
Coss
Crss
Qg
Input Capacitance
2800
320
190
50
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 50 A
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
75
Qgs
Qgd
RG
10
nC
10
2.0
11
Ω
td(on)
tr
td(off)
tf
20
30
60
25
20
V
DD = 20 V, RL = 0.4 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
40
15
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
66
100
1.5
50
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 50 A, VGS = 0 V
1.0
30
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 50 A, di/dt = 100 A/µs
1.6
2.4
0.06
0.024
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72345
S-80274-Rev. B, 11-Feb-08
SUM70N04-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
80
60
40
20
0
V
GS
= 10 thru 5 V
80
60
40
20
0
4 V
T
= 125 °C
C
25 °C
3 V
5
- 55 °C
0
1
2
3
4
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
150
120
90
60
30
0
0.016
0.012
0.008
0.004
0.000
T
= - 55 °C
C
25 °C
V
GS
= 4.5 V
125 °C
V
GS
= 10 V
0
20
40
60
80
100
0
10
20
30
40
50
60
I
D
- Drain Current (A)
I
- Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
10
8
4000
3200
2400
1600
800
V
D
= 20 V
DS
= 50 A
I
C
iss
6
4
2
C
oss
C
rss
0
0
0
10
20
30
40
50
0
8
16
24
32
40
Q - Total Gate Charge (nC)
g
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Gate Charge
Document Number: 72345
S-80274-Rev. B, 11-Feb-08
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3
SUM70N04-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V
D
= 10 V
GS
= 20 A
I
1.7
1.4
1.1
0.8
0.5
T = 150 °C
J
T = 25 °C
J
10
1
- 50 - 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
T
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
54
52
I
D
= 10 mA
50
48
46
44
42
- 50 - 25
0
25
50
75 100 125 150 175
T
- Junction Temperature (°C)
J
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 72345
S-80274-Rev. B, 11-Feb-08
SUM70N04-07L
Vishay Siliconix
THERMAL RATINGS
1000
100
80
60
100
10
10 µs
100 µs
Limited by Package
Limited
by r
*
DS(on)
1 ms
40
20
0
10 ms
DC, 100 ms
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
T
- Case Temperature (°C)
DS
C
* V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72345.
Document Number: 72345
S-80274-Rev. B, 11-Feb-08
www.vishay.com
5
Package Information
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
INCHES
MIN.
MILLIMETERS
MIN.
-B-
DIM.
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.410
-
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
10.414
-
A
E
-A-
c2
A
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.380
0.245
0.355
0.072
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
9.652
6.223
9.017
1.829
E1
K
6
b
b1
E3
b2
Thin lead
c*
Thick lead
Thin lead
c1
Thick lead
c2
D
A
A
b2
b
c
Detail “A”
E2
e
D1
D2
D3
E
M
M
A
0.010
PL
2
E1
E2
E3
e
b
b1
0.375
0.078
9.525
1.981
L1
0.100 BSC
2.54 BSC
SECTION A-A
DETAIL A (ROTATED 90°)
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
L
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
-
0.002
-
0.050
ECN: T10-0738-Rev. J, 03-Jan-11
DWG: 5843
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by max.
8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Document Number: 71198
Revison: 03-Jan-11
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1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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相关型号：
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Power Field-Effect Transistor, 70A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3/2
VISHAY
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