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SUM70N06-11 [VISHAY]

N-Channel 60-V (D-S), 175 C MOSFET; N通道60 -V （D -S ） ， 175℃ MOSFET
SUM70N06-11
型号： SUM70N06-11
厂家： VISHAY    VISHAY
描述：

N-Channel 60-V (D-S), 175 C MOSFET
N通道60 -V （D -S ） ， 175℃ MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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中文：  中文翻译
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SUM70N06-11  
New Product  
Vishay Siliconix  
N-Channel 60-V (D-S), 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D 175_C Junction Temperature  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance Package  
APPLICATIONS  
60  
0.011  
70  
D Automotive and Industrial  
D
TO-263  
G
G
D S  
Top View  
SUM70N06-11  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
"20  
70  
V
GS  
T
= 25_C  
= 100_C  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
49  
C
A
Pulsed Drain Current  
Avalanche Current  
I
160  
35  
DM  
I
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
61  
mJ  
b
T
T
= 25_C  
= 25_C  
120  
C
Power Dissipation  
P
D
W
c
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient—PCBMount  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case  
R
1.25  
Notes:  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 72008  
www.vishay.com  
S-03592—Rev. B, 31-Mar-03  
1
 
SUM70N06-11  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 250 mA  
60  
(BR)DSS  
GS  
D
V
V
DS  
= V , I = 250 mA  
V
2.0  
3.0  
4.0  
GS DS  
GS(th)  
V
DS  
= 0 V, V = "20 V  
I
"100  
1
nA  
GS  
GSS  
V
= 48 V, V = 0 V  
GS  
DS  
V
V
= 48 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 48 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
= 5 V, V = 10 V  
70  
25  
A
D(on)  
GS  
V
GS  
= 10 V, I = 30 A  
0.0085  
50  
0.011  
0.019  
0.025  
D
a
V
V
= 10 V, I = 30 A, T = 125_C  
Drain-Source On-State Resistance  
r
W
GS  
D
J
DS(on)  
= 10 V, I = 30 A, T = 175_C  
GS  
D
J
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 30 A  
S
D
Dynamicb  
Input Capacitance  
C
2500  
400  
165  
40  
iss  
Output Capacitance  
C
oss  
V = 0 V, V = 25 V, f = 1 MHz  
GS DS  
pF  
nC  
Reversen Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
60  
g
c
Gate-Source Charge  
Q
Q
13  
V
DS  
= 30 V V = 10 V, I = 70 A  
gs  
gd  
,
GS  
D
c
Gate-Drain Charge  
12  
c
Turn-On Delay Time  
t
15  
25  
20  
50  
15  
d(on)  
c
Rise Time  
t
r
11  
V
= 30 V, R = 0.43 W  
L
DD  
ns  
c
Turn-Off Delay Time  
t
30  
I
D
] 70 A, V  
= 10 V, R = 2.5 W  
GEN G  
d(off)  
c
Fall Time  
t
f
7
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
70  
160  
1.5  
80  
s
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= 50 A, V = 0 V  
1.0  
40  
V
ns  
A
GS  
Reverse Recovery Time  
t
rr  
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
1.7  
3.5  
0.14  
I
F
= 70 A, di/dt = 100 A/ms  
Q
0.034  
mC  
rr  
Notes:  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72008  
S-03592—Rev. B, 31-Mar-03  
www.vishay.com  
2
SUM70N06-11  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
160  
160  
120  
80  
40  
0
V
GS  
= 10 thru 7 V  
6 V  
120  
80  
40  
0
5 V  
T
= 125_C  
C
25_C  
4 V  
8
-55_C  
0
2
4
6
10  
0
1
2
3
4
5
6
7
8
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
120  
100  
80  
60  
40  
20  
0
0.015  
0.012  
0.009  
0.006  
0.003  
0.000  
T
= -55_C  
C
25_C  
V
GS  
= 10 V  
125_C  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
120  
V
GS  
- Gate-to-Source Voltage (V)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
3500  
3000  
2500  
2000  
1500  
1000  
500  
20  
16  
12  
8
V
= 30 V  
= 70 A  
DS  
I
D
C
iss  
C
oss  
4
C
rss  
0
0
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
V
DS  
- Drain-to-Source Voltage (V)  
Q
- Total Gate Charge (nC)  
g
Document Number: 72008  
www.vishay.com  
S-03592—Rev. B, 31-Mar-03  
3
SUM70N06-11  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
100  
V
= 10 V  
= 60 A  
GS  
I
D
2.0  
1.5  
1.0  
0.5  
0.0  
T = 150_C  
J
T = 25_C  
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0.2  
0.4  
V
0.6  
0.8  
1.0  
1.2  
T
- Junction Temperature (_C)  
- Source-to-Drain Voltage (V)  
J
SD  
Avalanche Current vs. Time  
On-Resistancevs. Junction Temperature  
80  
75  
70  
65  
60  
1000  
100  
10  
I
D
= 10 m A  
I
AV  
(A) @ T = 25_C  
J
1
I
AV  
(A) @ T = 150_C  
J
0.1  
-50 -25  
0
25  
50  
75 100 125 150 175  
0.00001 0.0001  
0.001  
0.01  
(Sec)  
0.1  
1
t
in  
T
- Junction Temperature (_C)  
J
Document Number: 72008  
S-03592—Rev. B, 31-Mar-03  
www.vishay.com  
4
SUM70N06-11  
New Product  
Vishay Siliconix  
THERMAL RATINGS  
Maximum Drain Current vs.  
Case Temperature  
Safe Operating Area  
1000  
80  
70  
60  
50  
40  
30  
20  
10  
0
10 ms  
100 ms  
Limited  
by r  
DS(on)  
100  
10  
1 ms  
1
10 ms  
T
= 25_C  
C
Single Pulse  
100 ms  
dc  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
T
- Ambient Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72008  
www.vishay.com  
S-03592—Rev. B, 31-Mar-03  
5

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